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MC14011UB价格
参考价格：￥0.8928
型号：MC14011UBDG 品牌：ONSemi 备注：这里有MC14011UB多少钱，2026年最近7天走势，今日出价，今日竞价，MC14011UB批发/采购报价，MC14011UB行情走势销售排行榜，MC14011UB报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MC14011UB | 四路 2 输入 NAND 门极 | ONSEMI 安森美半导体 |   | |
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 4CH 2-INP 14DIP 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE NAND 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器 | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：144.39 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：194.06 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
UB-Suffix Series CMOS Gates 文件：144.39 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | | ||
B-Suffix Series CMOS Gates B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V | ONSEMI 安森美半导体 | |
MC14011UB产品属性
- 类型
描述
- 型号
MC14011UB
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
UB-Suffix Series COMS Gates
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
On Semi |
25+ |
81 |
公司优势库存 热卖中!! |
||||
ON |
20+ |
SOP14 |
2960 |
诚信交易大量库存现货 |
|||
ON |
25+23+ |
SOP |
55605 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ON |
22+ |
SOP-14 |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
21+ |
SOIC-14 |
10000 |
只做原装,质量保证 |
|||
onsemi |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
原厂 |
2540+ |
CDIP14 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
ON |
23+ |
SOP |
6800 |
原装正品,假一罚十 |
|||
24+ |
DIP |
15 |
MC14011UB规格书下载地址
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DdatasheetPDF页码索引
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