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MC140晶体管资料
MC140别名:MC140三极管、MC140晶体管、MC140晶体三极管
MC140生产厂家:PIH
MC140制作材料:Si-NPN
MC140性质:低频或音频放大 (LF)_TR
MC140封装形式:直插封装
MC140极限工作电压:80V
MC140最大电流允许值:1A
MC140最大工作频率:<1MHZ或未知
MC140引脚数:3
MC140最大耗散功率:3.5W
MC140放大倍数:
MC140图片代号:B-21
MC140vtest:80
MC140htest:999900
- MC140atest:1
MC140wtest:3.5
MC140代换 MC140用什么型号代替:BD519,BD527,3DG16D,
MC140价格
参考价格:¥0.5882
型号:MC14001BDG 品牌:ONSemi 备注:这里有MC140多少钱,2024年最近7天走势,今日出价,今日竞价,MC140批发/采购报价,MC140行情走势销售排行榜,MC140报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Dual3-InputNORGatePlusInverter Dual3-InputNORGatePlusInverter TheMC14000UBdual3–inputNORgateplusinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmun | MotorolaMotorola, Inc 摩托罗拉 | |||
Dual3-InputNORGatePlusInverter Dual3-InputNORGatePlusInverter TheMC14000UBdual3–inputNORgateplusinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmun | MotorolaMotorola, Inc 摩托罗拉 | |||
Dual3-InputNORGatePlusInverter Dual3-InputNORGatePlusInverter TheMC14000UBdual3–inputNORgateplusinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmun | MotorolaMotorola, Inc 摩托罗拉 | |||
Dual3-InputNORGatePlusInverter Dual3-InputNORGatePlusInverter TheMC14000UBdual3–inputNORgateplusinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmun | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
UB-SuffixSeriesCMOSGates TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
UB-SuffixSeriesCMOSGates TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
UB-SuffixSeriesCMOSGates TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
UB-SuffixSeriesCMOSGates TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
UB-SuffixSeriesCMOSGates TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
UB-SuffixSeriesCMOSGates TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
UB-SuffixSeriesCMOSGates TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托罗拉 | |||
8-functioncalculatorunitco-operatingwithLEDdisplay [UNITRACEMI] 8-functioncalculatorunitco-operatingwithLEDdisplay | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
18-BITSTATICSHIFTREGISTER TheMC14006Bshiftregisteriscomprisedoffourseparateshiftregistersectionssharingacommonclock:twosectionshavefourstages,andtwosectionshavefivestageswithanoutputtaponboththefourthandfifthstages.Thismakesitpossibletoobtainashiftregisterof4,5,8,9,10,12 | MotorolaMotorola, Inc 摩托罗拉 | |||
DualComplementaryPairPlusInverter DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
8-functioncalculatorunitco-operatingwithLEDdisplay [UNITRACEMI] 8-functioncalculatorunitco-operatingwithLEDdisplay | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
DualComplementaryPairPlusInverter DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualComplementaryPairPlusInverter DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualComplementaryPairPlusInverter DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualComplementaryPairPlusInverter DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualComplementaryPairPlusInverter DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualComplementaryPairPlusInverter DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
DualComplementaryPairPlusInverter DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
4-BitFullAdder TheMC14008B4–bitfulladderisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook–aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | MotorolaMotorola, Inc 摩托罗拉 | |||
4-BitFullAdder TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
4-BitFullAdder TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
4-BitFullAdder TheMC14008B4–bitfulladderisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook–aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | MotorolaMotorola, Inc 摩托罗拉 | |||
4-BitFullAdder TheMC14008B4–bitfulladderisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook–aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | MotorolaMotorola, Inc 摩托罗拉 | |||
4-BitFullAdder TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
4-BitFullAdder TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
4-BitFullAdder TheMC14008B4–bitfulladderisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook–aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | MotorolaMotorola, Inc 摩托罗拉 | |||
4-BitFullAdder TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
4-BitFullAdder TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
4-BitFullAdder TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HEXBUFFERS HEXBUFFERS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HEXBUFFERS HEXBUFFERS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HEXBUFFERS HEXBUFFERS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
HEXBUFFERS HEXBUFFERS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
MC14009N [UNITRACEMI] | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
MC14009N [UNITRACEMI] | ETC1List of Unclassifed Manufacturers 未分类制造商 |
替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Toroidal Surface Mount Inductors | CANDDC&D Technologies | |||
10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL | POWERBOXPowerbox manufactures | |||
NOR GATE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Dual 3-input NOR gate and inverter | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Dual 3-input NOR gate and inverter | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Dual 3-input NOR gate and inverter | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
COMPLEMENTARY METAL OXIDE SILICON | NTENTE Electronics, Inc | |||
DUAL THREE INPUT NOR GATE PLUS INVERTER | RANDER & E International, Inc. R & E International, Inc. |
MC140产品属性
- 类型
描述
- 型号
MC140
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
Dual 3-Input NOR Gate Plus Inverter
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT |
9604+ |
DIP-16P |
4703 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
21+ |
DIP |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
MOT |
1802+ |
DIP16 |
6528 |
只做原装正品现货,或订货假一赔十! |
|||
ON/安森美 |
24+ |
DIP |
860000 |
明嘉莱只做原装正品现货 |
|||
MOT |
21+ |
DIP16 |
100000 |
原厂订货价格优势,可开13%的增值税票 |
|||
ON Semiconductor |
23+ |
16DIP |
9000 |
原装正品,支持实单 |
|||
MOT |
8433 |
86 |
公司优势库存 热卖中! |
||||
MOT |
2022 |
DIP16 |
3268 |
原厂原装正品,价格超越代理 |
|||
ON/安森美 |
DIP16 |
265209 |
假一罚十原包原标签常备现货! |
||||
MOT |
DIP-16P |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
MC140规格书下载地址
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- MC1394
- MC1393P
- MC1393AP
- MC1391P
- MC1391
- MC139
- MC13892
- MC13883
- MC13852
- MC13851
- MC13850
- MC13821
- MC13820
- MC138
- MC1378P
- MC13783
- MC1378
- MC1377P
- MC13770
- MC1377
- MC13760
- MC1375PQ
- MC-1375P
- MC1375P
- MC13751
- MC1374P
- MC1373P
- MC1372P
- MC1372
- MC1371F
- MC1371
- MC1370P
- MC1370
- MC1364PQ
MC140数据表相关新闻
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只做原装正品,原包装标签欢迎咨询!
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2019-7-4MC1403BD-精密低电压基准
精密的带鈥揼美联社参考电压设计的关键仪器仪表和D/A转换器应用。本机的设计工作与D/A转换器,精度高达12位,或作为功率参考电源应用。输出电压:2.5伏25毫伏输入电压范围:4.5V至40V静态电流:1.2mA典型输出电流:10毫安温度系数:10ppm的/掳C典型保证温度漂移规范相当于AD580标准8鈥扬在DIP和SOIC封装在8鈥扬典型应用参考电压为8至12位D/A转换器
2013-3-17MC1378P-ACF-II评估板操作手册
MC1378是一款双极复合视频叠加编码器和微机同步。MC1378包含完整的编码器功能的MC1377,即正交颜色的调制器,RGB矩阵,消隐电平钳位,再加上一个完整的补充同步器锁定一个基于微机的任何远程视频源的视频源。MC1378可以被用来作为本地系统的时间和编码源,但它是最有价值的使用时,锁定到一个远程微机源起源于视频信号。•包含所有需要的参考振荡器•可以工作在PAL或NTSC模式,625或525线•宽带,完全保真的色彩编码•本地或远程操作模式•最小
2013-1-16
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