MC140晶体管资料

  • MC140别名:MC140三极管、MC140晶体管、MC140晶体三极管

  • MC140生产厂家:PIH

  • MC140制作材料:Si-NPN

  • MC140性质:低频或音频放大 (LF)_TR

  • MC140封装形式:直插封装

  • MC140极限工作电压:80V

  • MC140最大电流允许值:1A

  • MC140最大工作频率:<1MHZ或未知

  • MC140引脚数:3

  • MC140最大耗散功率:3.5W

  • MC140放大倍数

  • MC140图片代号:B-21

  • MC140vtest:80

  • MC140htest:999900

  • MC140atest:1

  • MC140wtest:3.5

  • MC140代换 MC140用什么型号代替:BD519,BD527,3DG16D,

MC140价格

参考价格:¥0.5882

型号:MC14001BDG 品牌:ONSemi 备注:这里有MC140多少钱,2024年最近7天走势,今日出价,今日竞价,MC140批发/采购报价,MC140行情走势销售排行榜,MC140报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Dual3-InputNORGatePlusInverter

Dual3-InputNORGatePlusInverter TheMC14000UBdual3–inputNORgateplusinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmun

MotorolaMotorola, Inc

摩托罗拉

Motorola

Dual3-InputNORGatePlusInverter

Dual3-InputNORGatePlusInverter TheMC14000UBdual3–inputNORgateplusinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmun

MotorolaMotorola, Inc

摩托罗拉

Motorola

Dual3-InputNORGatePlusInverter

Dual3-InputNORGatePlusInverter TheMC14000UBdual3–inputNORgateplusinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmun

MotorolaMotorola, Inc

摩托罗拉

Motorola

Dual3-InputNORGatePlusInverter

Dual3-InputNORGatePlusInverter TheMC14000UBdual3–inputNORgateplusinverterisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSlogicgatesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmun

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

UB-SuffixSeriesCMOSGates

TheUBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired.TheUBsetofCMOSgatesareinvertingnon−bufferedfunctions.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉

Motorola

8-functioncalculatorunitco-operatingwithLEDdisplay

[UNITRACEMI] 8-functioncalculatorunitco-operatingwithLEDdisplay

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

18-BITSTATICSHIFTREGISTER

TheMC14006Bshiftregisteriscomprisedoffourseparateshiftregistersectionssharingacommonclock:twosectionshavefourstages,andtwosectionshavefivestageswithanoutputtaponboththefourthandfifthstages.Thismakesitpossibletoobtainashiftregisterof4,5,8,9,10,12

MotorolaMotorola, Inc

摩托罗拉

Motorola

DualComplementaryPairPlusInverter

DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

8-functioncalculatorunitco-operatingwithLEDdisplay

[UNITRACEMI] 8-functioncalculatorunitco-operatingwithLEDdisplay

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

DualComplementaryPairPlusInverter

DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualComplementaryPairPlusInverter

DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualComplementaryPairPlusInverter

DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualComplementaryPairPlusInverter

DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualComplementaryPairPlusInverter

DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualComplementaryPairPlusInverter

DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualComplementaryPairPlusInverter

DualComplementaryPairPlusInverter TheMC14007UBmultipurposedeviceconsistsofthreeN−ChannelandthreeP−Channelenhancementmodedevicespackagedtoprovideaccesstoeachdevice.Theseversatilepartsareusefulininvertercircuits,pulse−shapers,linearamplifiers,highinputimpedance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitFullAdder

TheMC14008B4–bitfulladderisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook–aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

MotorolaMotorola, Inc

摩托罗拉

Motorola

4-BitFullAdder

TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitFullAdder

TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitFullAdder

TheMC14008B4–bitfulladderisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook–aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

MotorolaMotorola, Inc

摩托罗拉

Motorola

4-BitFullAdder

TheMC14008B4–bitfulladderisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook–aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

MotorolaMotorola, Inc

摩托罗拉

Motorola

4-BitFullAdder

TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitFullAdder

TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitFullAdder

TheMC14008B4–bitfulladderisconstructedwithMOSP–channelandN–channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook–aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

MotorolaMotorola, Inc

摩托罗拉

Motorola

4-BitFullAdder

TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitFullAdder

TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

4-BitFullAdder

TheMC14008B4−bitfulladderisconstructedwithMOSP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure.Thisdeviceconsistsoffourfulladderswithfastinternallook−aheadcarryoutput.Itisusefulinbinaryadditionandotherarithmeticapplications.Thefast

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HEXBUFFERS

HEXBUFFERS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

HEXBUFFERS

HEXBUFFERS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

HEXBUFFERS

HEXBUFFERS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

HEXBUFFERS

HEXBUFFERS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

MC14009N

[UNITRACEMI]

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1

MC14009N

[UNITRACEMI]

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
替换型号 功能描述 生产厂家&企业 LOGO 操作

Toroidal Surface Mount Inductors

CANDDC&D Technologies

CANDD

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

POWERBOXPowerbox manufactures

POWERBOX

NOR GATE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Dual 3-input NOR gate and inverter

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

Dual 3-input NOR gate and inverter

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

Dual 3-input NOR gate and inverter

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

COMPLEMENTARY METAL OXIDE SILICON

NTENTE Electronics, Inc

NTE

DUAL THREE INPUT NOR GATE PLUS INVERTER

RANDER & E International, Inc.

R & E International, Inc.

RANDE

MC140产品属性

  • 类型

    描述

  • 型号

    MC140

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    Dual 3-Input NOR Gate Plus Inverter

更新时间:2024-4-19 18:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
9604+
DIP-16P
4703
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
21+
DIP
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
MOT
1802+
DIP16
6528
只做原装正品现货,或订货假一赔十!
ON/安森美
24+
DIP
860000
明嘉莱只做原装正品现货
MOT
21+
DIP16
100000
原厂订货价格优势,可开13%的增值税票
ON Semiconductor
23+
16DIP
9000
原装正品,支持实单
MOT
8433
86
公司优势库存 热卖中!
MOT
2022
DIP16
3268
原厂原装正品,价格超越代理
ON/安森美
DIP16
265209
假一罚十原包原标签常备现货!
MOT
DIP-16P
893993
集团化配单-有更多数量-免费送样-原包装正品现货-正规

MC140芯片相关品牌

  • ALSC
  • ATS2
  • BETLUX
  • delta
  • Diotec
  • ETAL
  • LUMBERG
  • Molex
  • MOLEX11
  • ONSEMI
  • WEIDMULLER
  • YFWDIODE

MC140数据表相关新闻

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    只做原装正品,原包装标签欢迎咨询!

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    原包装原标签特价销售假一罚十

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  • MC14049BDR2G原装现货

    MC14049BDR2G原装现货

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  • MC1403BD-精密低电压基准

    精密的带鈥揼美联社参考电压设计的关键仪器仪表和D/A转换器应用。本机的设计工作与D/A转换器,精度高达12位,或作为功率参考电源应用。输出电压:2.5伏25毫伏输入电压范围:4.5V至40V静态电流:1.2mA典型输出电流:10毫安温度系数:10ppm的/掳C典型保证温度漂移规范相当于AD580标准8鈥扬在DIP和SOIC封装在8鈥扬典型应用参考电压为8至12位D/A转换器

    2013-3-17
  • MC1378P-ACF-II评估板操作手册

    MC1378是一款双极复合视频叠加编码器和微机同步。MC1378包含完整的编码器功能的MC1377,即正交颜色的调制器,RGB矩阵,消隐电平钳位,再加上一个完整的补充同步器锁定一个基于微机的任何远程视频源的视频源。MC1378可以被用来作为本地系统的时间和编码源,但它是最有价值的使用时,锁定到一个远程微机源起源于视频信号。•包含所有需要的参考振荡器•可以工作在PAL或NTSC模式,625或525线•宽带,完全保真的色彩编码•本地或远程操作模式•最小

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