丝印代码：MC14008BCP；4-Bit Full Adder

Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F

Dual 3-Input NOR Gate Plus Inverter

Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun

Dual 3-Input NOR Gate Plus Inverter

Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun

Dual 3-Input NOR Gate Plus Inverter

Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun

Dual 3-Input NOR Gate Plus Inverter

Dual 3-Input NOR Gate Plus Inverter The MC14000UB dual 3–input NOR gate plus inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immun

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series COMS Gates

Quad 2-Input NOR Gate

The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. • Supply Voltage Range = 3.0 Vdc to 18 Vdc\n• All Outputs Buffered\n• Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.\n• Double Diode Protection on All Inputs Except: Triple Diode Protection on MC14011B and MC14081B\n• Pin-for-Pin Repla;

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

8-function calculator unit co-operating with LED display

[UNITRA CEMI] 8-function calculator unit co-operating with LED display

18-BIT STATIC SHIFT REGISTER

The MC14006B shift register is comprised of four separate shift register sections sharing a common clock: two sections have four stages, and two sections have five stages with an output tap on both the fourth and fifth stages. This makes it possible to obtain a shift register of 4, 5, 8, 9, 10, 12

Dual Complementary Pair Plus Inverter

Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance

8-function calculator unit co-operating with LED display

[UNITRA CEMI] 8-function calculator unit co-operating with LED display

Dual Complementary Pair Plus Inverter

Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance

Dual Complementary Pair Plus Inverter

Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance

Dual Complementary Pair Plus Inverter

Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance

Dual Complementary Pair Plus Inverter

Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance

Dual Complementary Pair Plus Inverter

Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance

Dual Complementary Pair Plus Inverter

Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance

Dual Complementary Pair Plus Inverter

Dual Complementary Pair Plus Inverter The MC14007UB multipurpose device consists of three N−Channel and three P−Channel enhancement mode devices packaged to provide access to each device. These versatile parts are useful in inverter circuits, pulse−shapers, linear amplifiers, high input impedance

4-Bit Full Adder

The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

丝印代码：14008B；4-Bit Full Adder

Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F

4-Bit Full Adder

The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F

4-Bit Full Adder

The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

Features * Look—Ahead Carry Output * Diode Protection on All Inputs * All Outputs Buffered * Supply Voltage Range = 3.0 Vdc to 18 Vdc * Capable of Driving Two Low—Power TTL Loads or One Low—Power Schottky TTL Load Over the Rated Temperature Range * Pin—for—Pin Replacement for CD4008B * Pb—F

4-Bit Full Adder

The MC14008B 4–bit full adder is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look–ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

4-Bit Full Adder

The MC14008B 4−bit full adder is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This device consists of four full adders with fast internal look−ahead carry output. It is useful in binary addition and other arithmetic applications. The fast

Toroidal Surface Mount Inductors

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

NOR GATE

Dual 3-input NOR gate and inverter

Dual 3-input NOR gate and inverter

Dual 3-input NOR gate and inverter

COMPLEMENTARY METAL OXIDE SILICON

DUAL THREE INPUT NOR GATE PLUS INVERTER