SWITCHING TRANSISTORS DUAL GENERAL PURPOSE TRANSISTORS

DESCRIPTION The MBT3946 D device is a spin off of our popular SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 363 six leaded surface mount package. By putting two discrete devi ces in one package, this device is ideal fo

Switching transistors

Dual General Purpose Transistor

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Dual General Purpose Transistor NPNPNP Silicon

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Dual General Purpose Transistors

Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two d

Dual General Purpose Transistor

The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

Dual General Purpose Transistor

The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS DUAL GP 200MA 40V SOT363 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

Dual General Purpose Transistors

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Dual General Purpose Transistor

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NPN PNP Bipolar Transistor

Dual General Purpose Transistor

文件：168.56 Kbytes Page：12 Pages

Dual General Purpose Transistor

文件：168.56 Kbytes Page：12 Pages

Dual General Purpose Transistor

文件：168.56 Kbytes Page：12 Pages

Half-Bridge Power MOSFET Controller

FEATURES „ On-chip charge pump for 7 V minimum input supply voltage „ High-current gate drive for driving a wide range of N-channel MOSFETs „ Bootstrapped gate drive with charge pump for 100 duty cycle „ Overtemperature protection „ Undervoltage protection „ –40ºC to 135ºC ambient operation

Half-Bridge Power MOSFET Controller

FEATURES „ On-chip charge pump for 7 V minimum input supply voltage „ High-current gate drive for driving a wide range of N-channel MOSFETs „ Bootstrapped gate drive with charge pump for 100 duty cycle „ Overtemperature protection „ Undervoltage protection „ –40ºC to 135ºC ambient operation

Half-Bridge Power MOSFET Controller

FEATURES „ On-chip charge pump for 7 V minimum input supply voltage „ High-current gate drive for driving a wide range of N-channel MOSFETs „ Bootstrapped gate drive with charge pump for 100 duty cycle „ Overtemperature protection „ Undervoltage protection „ –40ºC to 135ºC ambient operation

Half-Bridge Power MOSFET Controller

FEATURES „ On-chip charge pump for 7 V minimum input supply voltage „ High-current gate drive for driving a wide range of N-channel MOSFETs „ Bootstrapped gate drive with charge pump for 100 duty cycle „ Overtemperature protection „ Undervoltage protection „ –40ºC to 135ºC ambient operation

Half-Bridge Power MOSFET Controller

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