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MBT3946DW1T1G中文资料
MBT3946DW1T1G数据手册规格书PDF详情
The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
Features
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
MBT3946DW1T1G产品属性
- 类型
描述
- 型号
MBT3946DW1T1G
- 功能描述
两极晶体管 - BJT 200mA 40V Dual Complementary
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-220F |
32000 |
ONSEMI/安森美全新特价MBT3946DW1T1G即刻询购立享优惠#长期有货 |
|||
ONSEMI |
1741 |
SOT-363 |
2685 |
只做原装正品 |
|||
ONSEMI |
23+ |
NA |
10000 |
全新、原装 |
|||
ONSEMI |
22+ |
SMD |
2190 |
||||
ONSEMI |
2023+ |
SOT-363 |
20000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
|||
ONSEMI/安森美 |
24+ |
11210 |
8600 |
正品原装,正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSemicon |
2022+ |
21000 |
全新原装 货期两周 |
||||
ONSEMI/安森美 |
24+ |
SOT363 |
42000 |
只做原装进口现货 |
|||
ONSEMI/安森美 |
24+ |
SOT363 |
39197 |
郑重承诺只做原装进口现货 |
|||
onsemi(安森美) |
2025+ |
SC-70-6(SOT-363) |
55740 |
MBT3946DW1T1G 价格
参考价格:¥0.1259
MBT3946DW1T1G 资料下载更多...
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