封装/外壳：DO-214AB，SMC 包装：散装 描述：DIODE SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

Surface Mount Schottky Power Rectifier

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Surface Mount Schottky Power Rectifier

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