Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE®Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packagin

肖特基功率整流器，表面贴装，1.0 A，40 V

The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. W • Low Profile - Maximum Height of 1.1 mm\n• Small Footprint - Footprint Area of 8.45 mm2\n• Low VF Provides Higher Efficiency and Extends Battery Life\n• Supplied in 12 mm Tape and Reel\n• Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat SinkMechanical Characteristics:\;

Surface Mount Schottky Barrier Rectifiers

True Color PWM Delivers Constant Color with 400:1 Dimming Range

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Surface Mount Schottky Power Rectifier

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Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE®Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packagin

Low Leakage Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. Features •

Low Leakage Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. Features •

Low Leakage Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. Features •

Low Leakage Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. Features •

Low Leakage Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. Features •

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE®Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packagin

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE®Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packagin

Surface Mount Schottky Power Rectifier

文件：69.83 Kbytes Page：5 Pages

Surface Mount Schottky Power Rectifier

文件：69.83 Kbytes Page：5 Pages

Surface Mount Schottky Power Rectifier

文件：69.83 Kbytes Page：5 Pages

Surface Mount Schottky Power Rectifier

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封装/外壳：DO-216AA 包装：散装 描述：DIODE SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Schottky Power Rectifier

文件：69.83 Kbytes Page：5 Pages

Surface Mount Schottky Power Rectifier

文件：69.83 Kbytes Page：5 Pages

Surface Mount Schottky Power Rectifier

文件：163.32 Kbytes Page：5 Pages

封装/外壳：DO-216AA 包装：管件 描述：DIODE SCHOTTKY 40V 1A POWERMITE 分立半导体产品 二极管 - 整流器 - 单

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP