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MBRF2060C价格

参考价格:¥3.7319

型号:MBRF2060CTG 品牌:ONSemi 备注:这里有MBRF2060C多少钱,2026年最近7天走势,今日出价,今日竞价,MBRF2060C批发/采购报价,MBRF2060C行情走势销售排行榜,MBRF2060C报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRF2060C

Full Plastic Dual Schottky Barrier Power Rectifiers

文件:146.59 Kbytes Page:2 Pages

MOSPEC

统懋

MBRF2060C

SCHOTTKY BARRIER

SHS

MBRF2060C

Schottky Diode

MOSPEC

统懋

丝印代码:MBRF2060CT;20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

CITC

竹懋科技

丝印代码:MBRF2060CT;SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

COMCHIP

典琦

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A

Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body

DACHANG

大昌电子

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

Features ◇ UL Recognized File # E-326243 ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ Guard-ring for overvoltage protection ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Green compound with suffix G on packing code

TSC

台湾半导体

SCHOTTKY BARRIER RECTIFIER

everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e

DIOTECH

SCHOTTKY BARRIER RECTIFIER

everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e

DIOTECH

SCHOTTKY ISOLATED PLASTIC RECTIFIER

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ Hi

GE

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 30 to 150Volts FORWARD CURRENT - 20.0 Amperes FEATURES ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● Metal of silicon rectifier

HY

虹扬科技

Schottky Barrier Rectifier

FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use in high frequency

ISC

无锡固电

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

TGS

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling,

LUGUANG

鲁光电子

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

MOTOROLA

摩托罗拉

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

ONSEMI

安森美半导体

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VISHAYVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER TYPE DIODE

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=60V. • Fast Reverse Recovery Time : trr=35ns.

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Product Specification

Reverse Voltage 35 to 60 Volts Forward Current 20.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency

GOOD-ARK

固锝电子

Free-wheeling diodes

Description Littelfuse MBR series Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pr

LITTELFUSE

力特

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

MCC

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

schottky-5a-and-above

20A SCHOTTKY BARRIER RECTIFIER

DIODES

美台半导体

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward v

CHENDA

辰达半导体

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

DSK

SCHOTTKY RECTIFIER

Features: • 150°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • T

SMC

桑德斯微电子

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

KERSEMI

Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

KERSEMI

Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

KERSEMI

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

KERSEMI

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen

DYELEC

迪一电子

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

KERSEMI

Product Specification

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

GOOD-ARK

固锝电子

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

ONSEMI

安森美半导体

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency

ONSEMI

安森美半导体

Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

SURGE

Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

SURGE

SCHOTTKY RECTIFIER

Features: • 125 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMC

桑德斯微电子

MBRF2060CTL SCHOTTKY RECTIFIER

Features 125C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

SMCDIODE

桑德斯微电子

MBRF2060CTP SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features: • 150 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMC

桑德斯微电子

20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp

THINKISEMI

思祁半导体

Schottky Barrier Diode in a TO-220F Plastic Package

文件:955.23 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

Plastic material used carries Underwriters Laboratory Classifications 94V-0

文件:921.52 Kbytes Page:2 Pages

KERSEMI

Schottky Barrier Recitifiers

文件:497.88 Kbytes Page:4 Pages

HY

虹扬科技

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:183.36 Kbytes Page:2 Pages

TSC

台湾半导体

Isolation 20.0 AMPS. Schottky Barrier Rectifiers

文件:122.87 Kbytes Page:2 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:231.87 Kbytes Page:4 Pages

TSC

台湾半导体

Schottky Barrier Rectifier

文件:124.26 Kbytes Page:2 Pages

DACHANG

大昌电子

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 60V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

SMCDIODE

桑德斯微电子

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

文件:632.26 Kbytes Page:2 Pages

KERSEMI

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

Dual Schottky Barrier Rectifiers

文件:257.38 Kbytes Page:3 Pages

GOOD-ARK

固锝电子

20A Trench Schottky Rectifier

文件:510.5 Kbytes Page:3 Pages

CITC

竹懋科技

Dual Common Cathode Schottky Rectifier

文件:231.26 Kbytes Page:4 Pages

TSC

台湾半导体

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

MOTOROLA

摩托罗拉

QUAD OPERATIONAL AMPLIFIER?

文件:231.91 Kbytes Page:6 Pages

NJRC

日本无线

QUAD OPERATIONAL AMPLIFIER?

文件:231.91 Kbytes Page:6 Pages

NJRC

日本无线

MBRF2060C产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Configuration:

    Common Cathode

  • VRRM Min (V):

    60

  • VF Max (V):

    0.95

  • IRM Max (µA):

    150

  • IO(rec) Max (A):

    20

  • IFSM Max (A):

    150

  • Package Type:

    TO-220-3 FullPak

更新时间:2026-5-18 15:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
SMC Diode Solutions
22+
ITO220AB
9000
原厂渠道,现货配单
ON
26+
TO-220F
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
PHI
25+
DIP28
10964
LITTELFUSE
原厂封装
9800
原装进口公司现货假一赔百
ON
2025+
TO-220F
4755
全新原厂原装产品、公司现货销售
BAOCHENG
24+
con
50
现货常备产品原装可到京北通宇商城查价格
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
LITTELFUSE/力特
2407+
30098
全新原装!仓库现货,大胆开价!
SENSITRON
26+
SOP8
86720
全新原装正品价格最实惠 承诺假一赔百

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