MBRF2060CT价格

参考价格:¥3.7319

型号:MBRF2060CTG 品牌:ONSemi 备注:这里有MBRF2060CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRF2060CT批发/采购报价,MBRF2060CT行情走势销售排行榜,MBRF2060CT报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MBRF2060CT

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

Motorola

摩托罗拉

MBRF2060CT

SCHOTTKY ISOLATED PLASTIC RECTIFIER

FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ Hi

GE

GE Industrial Company

MBRF2060CT

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

MCC

美微科

MBRF2060CT

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A

Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body

DACHANG

大昌电子

MBRF2060CT

SCHOTTKY BARRIER RECTIFIER

everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e

DIOTECH

MBRF2060CT

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

ONSEMI

安森美半导体

MBRF2060CT

SCHOTTKY BARRIER RECTIFIER

everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e

DIOTECH

MBRF2060CT

SCHOTTKY BARRIER TYPE DIODE

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=60V. • Fast Reverse Recovery Time : trr=35ns.

KECKEC CORPORATION

KEC株式会社

MBRF2060CT

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

Features ◇ UL Recognized File # E-326243 ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ Guard-ring for overvoltage protection ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Green compound with suffix G on packing code

TSC

台湾半导体

MBRF2060CT

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 30 to 150Volts FORWARD CURRENT - 20.0 Amperes FEATURES ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● Metal of silicon rectifier

HY

MBRF2060CT

Dual Common-Cathode Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

VishayVishay Siliconix

威世科技威世科技半导体

MBRF2060CT

Product Specification

Reverse Voltage 35 to 60 Volts Forward Current 20.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency

Good-Ark

MBRF2060CT

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling,

LUGUANG

鲁光电子

MBRF2060CT

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

KERSEMI

MBRF2060CT

SCHOTTKY RECTIFIER

Features: • 150°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • T

SMCSangdest Microelectronic (Nanjing) Co., Ltd

烧结金属

MBRF2060CT

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward v

CHENDA

辰达半导体

MBRF2060CT

20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

CITC

竹懋科技

MBRF2060CT

Schottky Barrier Rectifier

FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use in high frequency

ISC

无锡固电

MBRF2060CT

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

KERSEMI

MBRF2060CT

Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-

KERSEMI

MBRF2060CT

SCHOTTKY BARRIER RECTIFIERS

FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

DSK

MBRF2060CT

Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0

Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package

KERSEMI

MBRF2060CT

Free-wheeling diodes

Description Littelfuse MBR series Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pr

Littelfuse

力特

MBRF2060CT

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

TGS

MBRF2060CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

MBRF2060CT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

MBRF2060CT

Schottky Barrier Rectifier

文件:124.26 Kbytes Page:2 Pages

DACHANG

大昌电子

MBRF2060CT

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 60V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

SMCDIODE

桑德斯微电子

MBRF2060CT

20 Amp Schottky Barrier Rectifier 20 to 100 Volts

文件:632.26 Kbytes Page:2 Pages

KERSEMI

MBRF2060CT

封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

MBRF2060CT

Dual Common Cathode Schottky Rectifier

文件:231.87 Kbytes Page:4 Pages

TSC

台湾半导体

MBRF2060CT

Schottky Barrier Diode in a TO-220F Plastic Package

文件:955.23 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

MBRF2060CT

Plastic material used carries Underwriters Laboratory Classifications 94V-0

文件:921.52 Kbytes Page:2 Pages

KERSEMI

MBRF2060CT

20.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:183.36 Kbytes Page:2 Pages

TSC

台湾半导体

MBRF2060CT

Isolation 20.0 AMPS. Schottky Barrier Rectifiers

文件:122.87 Kbytes Page:2 Pages

TSC

台湾半导体

MBRF2060CT

Schottky Barrier Recitifiers

文件:497.88 Kbytes Page:4 Pages

HY

MBRF2060CT

Dual Schottky Barrier Rectifiers

文件:257.38 Kbytes Page:3 Pages

Good-Ark

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

Switch-mode Schottky Power Rectifier

The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

KERSEMI

Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

Surge

Product Specification

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

Good-Ark

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

ONSEMI

安森美半导体

Schottky Barrier Rectifier

Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low

Surge

SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

COMCHIP

典琦

MBRF2060CTL SCHOTTKY RECTIFIER

Features 125C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features: • 125 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMCSangdest Microelectronic (Nanjing) Co., Ltd

烧结金属

SCHOTTKY RECTIFIER

Features: • 150 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMCSangdest Microelectronic (Nanjing) Co., Ltd

烧结金属

MBRF2060CTP SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

SMCDIODE

桑德斯微电子

20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp

THINKISEMI

思祁半导体

20A Trench Schottky Rectifier

文件:510.5 Kbytes Page:3 Pages

CITC

竹懋科技

Dual Common Cathode Schottky Rectifier

文件:231.26 Kbytes Page:4 Pages

TSC

台湾半导体

Pneumatically operated 2/2-way angle seat valve with stainless steel actuator

The pneumatically operated angle seat valve with stainless steel actuators fulfils the demands of tough process environments. Unrivalled life time and sealing integrity is guaranteed by the trusted self-adjusting spindle sealing. The stainless steel actuator has been designed for tough applicat

BURKERT

宝帝流体控制系统

Modular process valve cluster – distributor and collector

Type 8840 comes with ready to install modules of tried and tested Bürkert process valves. The valve cluster, based on a modular valve body, allows different configurations. The individual parts are joined hermetically tight and in a very compact way. No installation effort for pipework, fitting

BURKERT

宝帝流体控制系统

N-Channel TrenchPowerMOSFET

General Description The 2060K.uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications. Features ● VDS=20V;ID=60A; RDS(ON)

SUPERCHIP

富满微

Snap Bushings

文件:133.28 Kbytes Page:1 Pages

HeycoHeyco.

海科

38-mm (1 1/2-inch) 10 stage, End-Window Photomultiplier

文件:295.95 Kbytes Page:7 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

MBRF2060CT产品属性

  • 类型

    描述

  • 型号

    MBRF2060CT

  • 功能描述

    肖特基二极管与整流器 20 Amp 60 Volt Dual

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-8-6 21:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
2016+
TO220
6000
只做原装,假一罚十,公司可开17%增值税发票!
STL
23+
TO-220
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
SMC
24+
NA/
2325
优势代理渠道,原装正品,可全系列订货开增值税票
TAIWANSEMICONDUCTOR
25+
TO220
20300
TAIWANSEMICONDUCTOR原装特价MBRF2060CT即刻询购立享优惠#长期有货
SSG
11+
TO-220F
380
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Diodes
25+
电联咨询
7800
公司现货,提供拆样技术支持
SSG
11+
TO-220F
35
原装进口无铅现货
LITEON
1844+
TO-220F
9852
只做原装正品假一赔十为客户做到零风险!!
GS
23+
TO-220F
10000
专做原装正品,假一罚百!
JXND/嘉兴南电/碳化硅
24+
TO220F
50000
全新原装,一手货源,全场热卖!

MBRF2060CT数据表相关新闻