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MBRF2060CT价格
参考价格:¥3.7319
型号:MBRF2060CTG 品牌:ONSemi 备注:这里有MBRF2060CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRF2060CT批发/采购报价,MBRF2060CT行情走势销售排行榜,MBRF2060CT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBRF2060CT | SWITCHMODE??Schottky Power Rectifirer SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers | Motorola 摩托罗拉 | ||
MBRF2060CT | SCHOTTKY ISOLATED PLASTIC RECTIFIER FEATURES ♦ Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction,majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward voltage drop ♦ Hi | GE GE Industrial Company | ||
MBRF2060CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | MCC 美微科 | ||
MBRF2060CT | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 20A Reverse Voltage 40 to 200 V Forward Current 20A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard Mechanical Data ·Case: Molded Plastic ·Polarity: Symbols molded or marked on body | DACHANG 大昌电子 | ||
MBRF2060CT | SCHOTTKY BARRIER RECTIFIER everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e | DIOTECH | ||
MBRF2060CT | SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | ONSEMI 安森美半导体 | ||
MBRF2060CT | SCHOTTKY BARRIER RECTIFIER everse Voltage - 20 to 100 Volts Forward Current - 20.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high e | DIOTECH | ||
MBRF2060CT | SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=20A. • Repetitive Peak Reverse Voltage : VRRM=60V. • Fast Reverse Recovery Time : trr=35ns. | KECKEC CORPORATION KEC株式会社 | ||
MBRF2060CT | Isolated 20.0 AMPS. Schottky Barrier Rectifiers Features ◇ UL Recognized File # E-326243 ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ Guard-ring for overvoltage protection ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Green compound with suffix G on packing code | TSC 台湾半导体 | ||
MBRF2060CT | SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 150Volts FORWARD CURRENT - 20.0 Amperes FEATURES ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● Metal of silicon rectifier | HY | ||
MBRF2060CT | Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBRF2060CT | Product Specification Reverse Voltage 35 to 60 Volts Forward Current 20.0 Amperes Features ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency | Good-Ark | ||
MBRF2060CT | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, | LUGUANG 鲁光电子 | ||
MBRF2060CT | SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | KERSEMI | ||
MBRF2060CT | SCHOTTKY RECTIFIER Features: • 150°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • T | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | ||
MBRF2060CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward v | CHENDA 辰达半导体 | ||
MBRF2060CT | 20A High Power Schottky Barrier Rectifiersnull ■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, | CITC 竹懋科技 | ||
MBRF2060CT | Schottky Barrier Rectifier FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use in high frequency | ISC 无锡固电 | ||
MBRF2060CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | ||
MBRF2060CT | Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO- | KERSEMI | ||
MBRF2060CT | SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | ||
MBRF2060CT | Isolated plastic package has Underwriters Laboratory Flammability Classification 94V-0 Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | ||
MBRF2060CT | Free-wheeling diodes Description Littelfuse MBR series Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pr | Littelfuse 力特 | ||
MBRF2060CT | TO-220F Plastic-Encapsulate Diodes SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | TGS | ||
MBRF2060CT | SCHOTTKY BARRIER RECTIFIER FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94 | SAMYANG 三阳电子 | ||
MBRF2060CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBRF2060CT | Schottky Barrier Rectifier 文件:124.26 Kbytes Page:2 Pages | DACHANG 大昌电子 | ||
MBRF2060CT | 封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 60V ITO220 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | ||
MBRF2060CT | 20 Amp Schottky Barrier Rectifier 20 to 100 Volts 文件:632.26 Kbytes Page:2 Pages | KERSEMI | ||
MBRF2060CT | 封装/外壳:TO-220-3 全封装,隔离接片 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 20A ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBRF2060CT | Dual Common Cathode Schottky Rectifier 文件:231.87 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBRF2060CT | Schottky Barrier Diode in a TO-220F Plastic Package 文件:955.23 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | ||
MBRF2060CT | Plastic material used carries Underwriters Laboratory Classifications 94V-0 文件:921.52 Kbytes Page:2 Pages | KERSEMI | ||
MBRF2060CT | 20.0 AMPS. Isolated Schottky Barrier Rectifiers 文件:183.36 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF2060CT | Isolation 20.0 AMPS. Schottky Barrier Rectifiers 文件:122.87 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBRF2060CT | Schottky Barrier Recitifiers 文件:497.88 Kbytes Page:4 Pages | HY | ||
MBRF2060CT | Dual Schottky Barrier Rectifiers 文件:257.38 Kbytes Page:3 Pages | Good-Ark | ||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
Switch-mode Schottky Power Rectifier The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 60 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | KERSEMI | |||
Schottky Barrier Rectifier Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low | Surge | |||
Product Specification Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low | Good-Ark | |||
SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s | ONSEMI 安森美半导体 | |||
Schottky Barrier Rectifier Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal of silicon rectifier, majority carrier conduction ● Low forward voltage, high efficiency ● Guarding for over voltage protection ● For use in low | Surge | |||
SMD Schottky Barrier Rectifiers Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla | COMCHIP 典琦 | |||
MBRF2060CTL SCHOTTKY RECTIFIER Features 125C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY RECTIFIER Features: • 125 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | |||
SCHOTTKY RECTIFIER Features: • 150 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | |||
MBRF2060CTP SCHOTTKY RECTIFIER Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre | SMCDIODE 桑德斯微电子 | |||
20 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp | THINKISEMI 思祁半导体 | |||
20A Trench Schottky Rectifier 文件:510.5 Kbytes Page:3 Pages | CITC 竹懋科技 | |||
Dual Common Cathode Schottky Rectifier 文件:231.26 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Pneumatically operated 2/2-way angle seat valve with stainless steel actuator The pneumatically operated angle seat valve with stainless steel actuators fulfils the demands of tough process environments. Unrivalled life time and sealing integrity is guaranteed by the trusted self-adjusting spindle sealing. The stainless steel actuator has been designed for tough applicat | BURKERT 宝帝流体控制系统 | |||
Modular process valve cluster – distributor and collector Type 8840 comes with ready to install modules of tried and tested Bürkert process valves. The valve cluster, based on a modular valve body, allows different configurations. The individual parts are joined hermetically tight and in a very compact way. No installation effort for pipework, fitting | BURKERT 宝帝流体控制系统 | |||
N-Channel TrenchPowerMOSFET General Description The 2060K.uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications. Features ● VDS=20V;ID=60A; RDS(ON) | SUPERCHIP 富满微 | |||
Snap Bushings 文件:133.28 Kbytes Page:1 Pages | HeycoHeyco. 海科 | |||
38-mm (1 1/2-inch) 10 stage, End-Window Photomultiplier 文件:295.95 Kbytes Page:7 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |
MBRF2060CT产品属性
- 类型
描述
- 型号
MBRF2060CT
- 功能描述
肖特基二极管与整流器 20 Amp 60 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES |
2016+ |
TO220 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
STL |
23+ |
TO-220 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
SMC |
24+ |
NA/ |
2325 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TAIWANSEMICONDUCTOR |
25+ |
TO220 |
20300 |
TAIWANSEMICONDUCTOR原装特价MBRF2060CT即刻询购立享优惠#长期有货 |
|||
SSG |
11+ |
TO-220F |
380 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Diodes |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
SSG |
11+ |
TO-220F |
35 |
原装进口无铅现货 |
|||
LITEON |
1844+ |
TO-220F |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
GS |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
JXND/嘉兴南电/碳化硅 |
24+ |
TO220F |
50000 |
全新原装,一手货源,全场热卖! |
MBRF2060CT规格书下载地址
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2021-1-23MBRF2060CTG原装正品环保现货
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