位置：首页 > IC中文资料 > MBRB6040CT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
TO-247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
APT |
25+ |
TO247 |
7241 |
原装正品,欢迎来电咨询! |
|||
APT |
23+ |
TO-247 |
12300 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
APT |
06+ |
TO-247 |
115 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
APT |
23+ |
TO-247 |
7300 |
专注配单,只做原装进口现货 |
|||
APT |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
|||
APT |
24+ |
NA/ |
17068 |
原装现货,当天可交货,原型号开票 |
|||
24+ |
8866 |
||||||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
22+ |
TO-247 |
8000 |
原装正品支持实单 |
MBRB6040CT规格书下载地址
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DdatasheetPDF页码索引
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