MBRB30H60CT价格

参考价格:¥3.3399

型号:MBRB30H60CT-1G 品牌:ON 备注:这里有MBRB30H60CT多少钱,2026年最近7天走势,今日出价,今日竞价,MBRB30H60CT批发/采购报价,MBRB30H60CT行情走势销售排行榜,MBRB30H60CT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRB30H60CT

Dual High-Voltage Schottky Rectifiers

Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabil

VishayVishay Siliconix

威世威世科技公司

MBRB30H60CT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

MBRB30H60CT

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件:1.25422 Mbytes Page:3 Pages

KERSEMI

MBRB30H60CT

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0

文件:1.24349 Mbytes Page:3 Pages

KERSEMI

MBRB30H60CT

Dual Common-Cathode Schottky Rectifier

文件:161.96 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Switch-mode Power Rectifier 60 V, 30 A

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Guard−Ring for Stress Protection • AEC−Q101 Qualified and PPAP Capable • NRVBB Prefix for Automotive and Other Appli

ONSEMI

安森美半导体

Switch-mode Power Rectifier 60 V, 30 A

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Guard−Ring for Stress Protection • AEC−Q101 Qualified and PPAP Capable • NRVBB Prefix for Automotive and Other Appli

ONSEMI

安森美半导体

Switch-mode Power Rectifier 60 V, 30 A

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Guard−Ring for Stress Protection • AEC−Q101 Qualified and PPAP Capable • NRVBB Prefix for Automotive and Other Appli

ONSEMI

安森美半导体

Schottky Barrier Rectifier, H-Series, 60 V, 30 A

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier 60 V, 30 A

文件:58.59 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier 60 V, 30 A

文件:58.59 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier 60 V, 30 A

文件:73.45 Kbytes Page:7 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier 60 V, 30 A

文件:58.59 Kbytes Page:6 Pages

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifier

文件:167.42 Kbytes Page:9 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

文件:170.81 Kbytes Page:10 Pages

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifier

文件:167.42 Kbytes Page:9 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

文件:170.81 Kbytes Page:10 Pages

ONSEMI

安森美半导体

封装/外壳:TO-262-3,长引线,I²Pak,TO-262AA 包装:管件 描述:DIODE SCHOTTKY 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 60V TO263AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

SWITCHMODE Power Rectifier

文件:170.81 Kbytes Page:10 Pages

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifier

文件:167.42 Kbytes Page:9 Pages

ONSEMI

安森美半导体

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

STMICROELECTRONICS

意法半导体

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

STMICROELECTRONICS

意法半导体

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

STMICROELECTRONICS

意法半导体

30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode

文件:385.31 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:153.68 Kbytes Page:7 Pages

GAMMA

MBRB30H60CT产品属性

  • 类型

    描述

  • 型号

    MBRB30H60CT

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Schottky Rectifiers

更新时间:2026-1-1 11:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY(威世)
24+
TO-263AB
5627
百分百原装正品,可原型号开票
VISHAY/威世
23+
TO263
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
三年内
1983
只做原装正品
ON
2015+
I2PAK(T
12500
全新原装,现货库存长期供应
ON/安森美
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
JINGDAO/晶导微
23+
MBF
69820
终端可以免费供样,支持BOM配单!
ON/安森美
25+
电联咨询
7800
公司现货,提供拆样技术支持
ON
2025+
NA
3000
原装正品现货供应商原厂渠道物美价优
ON/安森美
24+
TO-263
12000
只做原装合作共赢长期订货
VISHAY/威世
TO-263
22+
6000
十年配单,只做原装

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