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MBRB10100价格
参考价格：￥1.6373
型号：MBRB10100CT 品牌：Diodes Incorporated 备注：这里有MBRB10100多少钱，2025年最近7天走势，今日出价，今日竞价，MBRB10100批发/采购报价，MBRB10100行情走势销售排行榜，MBRB10100报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRB10100 | High Voltage Schottky Rectifiers FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 |   | |
MBRB10100 | High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | |
MBRB10100 | SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | | |
MBRB10100 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package | KERSEMI | | |
MBRB10100 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | | |
MBRB10100 | 10 Amp Schottky Barrier Rectifier 20 to 200 Volts Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Metal of Silicon Rectifier, Majority Conduc | MCC | | |
MBRB10100 | SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | | |
MBRB10100 | Trench MOS Schottky technology Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number | KERSEMI | | |
MBRB10100 | High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc c | LEIDITECH 雷卯电子 | | |
MBRB10100 | MBRB10100 SCHOTTKY RECTIFIER Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device A | SMCDIODE 桑德斯微电子 | | |
MBRB10100 | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE SCHOTTKY 100V D2PAK 分立半导体产品 二极管 - 整流器 - 单 | SMCDIODE 桑德斯微电子 | | |
MBRB10100 | 10A,100V,Surface Mount Schottky Barrier Rectifiers | GALAXY 银河微电 | | |
MBRB10100 | 肖特基二极管 | MCC | | |
MBRB10100 | High-Voltage Schottky Rectifier 文件：141.37 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol | VAISH 威世 | | ||
Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | | ||
2SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling | BILIN 银河微电 | | ||
10 Amp Schottky Barrier Rectifier 100 Volts Features • Metal of Silicon Rectifier, Majority Carrier Conduction • Low Power Loss • High Current Capability, High Efficiency • Guard Ring For Transient Protection • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy | MCC | | ||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | | ||
Dual Schottky Barrier Rectifiers Reverse Voltage 100 Volts , Forward Current 10A Reverse Voltage 100 Volts , Forward Current 10A Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardring | FS | | ||
MBRB10100CT SCHOTTKY RECTIFIER Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | | ||
Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFE RFE international | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | | ||
Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFE RFE international | | ||
High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Schottky technology Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number | KERSEMI | | ||
Trench MOS Schottky technology Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number | KERSEMI | | ||
High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance plea | VishayVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：1.04547 Mbytes Page：3 Pages | LEIDITECH 雷卯电子 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY 100V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | | ||
Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance | VishayVishay Siliconix 威世威世科技公司 | | ||
10A Surface Mount High Power Schottky Barrier Rectifiers 文件：102.64 Kbytes Page：3 Pages | CITC 竹懋科技 | | ||
10A SCHOTTKY BARRIER RECTIFIER 文件：494.01 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Schottky Diode in a TO-263 Plastic Package 文件：655.22 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：704.58 Kbytes Page：4 Pages | JIANGSU 长电科技 | | ||
10A SCHOTTKY BARRIER RECTIFIER 文件：576.12 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Free-wheeling diodes 文件：591.84 Kbytes Page：3 Pages | Littelfuse 力特 | | ||
Product Specification 文件：514.53 Kbytes Page：7 Pages | Good-Ark 固锝电子 | | ||
10A SCHOTTKY BARRIER RECTIFIER 文件：576.12 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
10 Amp Schottky Barrier Rectifier 100 Volts 文件：236.23 Kbytes Page：3 Pages | MCC | | ||
10A SCHOTTKY BARRIER RECTIFIER 文件：576.12 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
10A SCHOTTKY BARRIER RECTIFIER 文件：494.01 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：691.41 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：691.41 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：965.72 Kbytes Page：4 Pages | JIANGSU 长电科技 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：691.41 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Quad 2-Input NOR Gate with Strobe
| Philips 飞利浦 | | ||
Quad 2-Input NOR Gate with Strobe
| Philips 飞利浦 | | ||
Quad 2-Input NOR Gate with Strobe
| Philips 飞利浦 | | ||
Smooth, high torque, roller ratchet handle 文件：254.3 Kbytes Page：3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Nylon PCB Supports - Imperial Spacing 文件：126.42 Kbytes Page：1 Pages | Heyco | |
MBRB10100产品属性
- 类型
描述
- 型号
MBRB10100
- 制造商
ON Semiconductor
- 制造商
Vishay Semiconductors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
15148 |
全新原装正品/价格优惠/质量保障 |
|||
VISHAY(威世) |
24+ |
TO-263 |
5627 |
百分百原装正品,可原型号开票 |
|||
VISHAY |
20+ |
TO-263 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
Vishay |
2540+ |
SMD |
9854 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
|||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装，请咨询 |
|||
WISHAY |
21+ |
TO-263 |
1574 |
||||
扬杰 |
25+ |
TO-263 |
10000 |
扬杰原厂一级代理商,价格优势! |
|||
MBRB10100CT |
25+ |
650 |
650 |
||||
DIODES/美台 |
24+ |
TO-263AB |
25000 |
原装正品公司现货,假一赔十! |
MBRB10100规格书下载地址
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2013-2-17
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