MBRB10100CT价格

参考价格:¥1.6373

型号:MBRB10100CT 品牌:Diodes Incorporated 备注:这里有MBRB10100CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRB10100CT批发/采购报价,MBRB10100CT行情走势销售排行榜,MBRB10100CT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRB10100CT

Dual High-Voltage Schottky Rectifiers

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

VishayVishay Siliconix

威世威世科技公司

MBRB10100CT

10 Amp Schottky Barrier Rectifier 100 Volts

Features • Metal of Silicon Rectifier, Majority Carrier Conduction • Low Power Loss • High Current Capability, High Efficiency • Guard Ring For Transient Protection • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy

MCC

MBRB10100CT

Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

RFE

RFE international

MBRB10100CT

2SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling

BILIN

银河微电

MBRB10100CT

MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol

VAISH

威世

MBRB10100CT

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This

SMC

桑德斯微电子

MBRB10100CT

MBRB10100CT SCHOTTKY RECTIFIER

Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free

SMCDIODE

桑德斯微电子

MBRB10100CT

Dual Schottky Barrier Rectifiers Reverse Voltage 100 Volts , Forward Current 10A

Reverse Voltage 100 Volts , Forward Current 10A Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardring

FS

MBRB10100CT

10A Surface Mount High Power Schottky Barrier Rectifiers

文件:102.64 Kbytes Page:3 Pages

CITC

竹懋科技

MBRB10100CT

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE SCHOTTKY 100V 5A TO263 分立半导体产品 二极管 - 整流器 - 阵列

Littelfuse

力特

MBRB10100CT

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE SCHOTTKY 100V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

MBRB10100CT

10A,100V,Schottky Barrier Rectifiers

GALAXY

银河微电

MBRB10100CT

肖特基二极管

MCC

MBRB10100CT

Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

VishayVishay Siliconix

威世威世科技公司

MBRB10100CT

Schottky Diode in a TO-263 Plastic Package

文件:655.22 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

MBRB10100CT

SCHOTTKY BARRIER RECTIFIER

文件:704.58 Kbytes Page:4 Pages

JIANGSU

长电科技

MBRB10100CT

Product Specification

文件:514.53 Kbytes Page:7 Pages

Good-Ark

固锝电子

MBRB10100CT

Free-wheeling diodes

文件:591.84 Kbytes Page:3 Pages

Littelfuse

力特

MBRB10100CT

10A SCHOTTKY BARRIER RECTIFIER

文件:494.01 Kbytes Page:6 Pages

DIODES

美台半导体

MBRB10100CT

10A SCHOTTKY BARRIER RECTIFIER

文件:576.12 Kbytes Page:5 Pages

DIODES

美台半导体

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

VishayVishay Siliconix

威世威世科技公司

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance

VishayVishay Siliconix

威世威世科技公司

Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃

RFE

RFE international

10A SCHOTTKY BARRIER RECTIFIER

文件:576.12 Kbytes Page:5 Pages

DIODES

美台半导体

10 Amp Schottky Barrier Rectifier 100 Volts

文件:236.23 Kbytes Page:3 Pages

MCC

10A SCHOTTKY BARRIER RECTIFIER

文件:576.12 Kbytes Page:5 Pages

DIODES

美台半导体

10A SCHOTTKY BARRIER RECTIFIER

文件:494.01 Kbytes Page:6 Pages

DIODES

美台半导体

High Voltage Trench MOS Barrier Schottky Rectifier

文件:691.41 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

文件:691.41 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER RECTIFIER

文件:965.72 Kbytes Page:4 Pages

JIANGSU

长电科技

High Voltage Trench MOS Barrier Schottky Rectifier

文件:691.41 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

Quad 2-Input NOR Gate with Strobe

Philips

飞利浦

Quad 2-Input NOR Gate with Strobe

Philips

飞利浦

Quad 2-Input NOR Gate with Strobe

Philips

飞利浦

Smooth, high torque, roller ratchet handle

文件:254.3 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Nylon PCB Supports - Imperial Spacing

文件:126.42 Kbytes Page:1 Pages

Heyco

MBRB10100CT产品属性

  • 类型

    描述

  • 型号

    MBRB10100CT

  • 制造商

    VAISH

  • 制造商全称

    VAISH

  • 功能描述

    MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series

更新时间:2025-12-28 11:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
TO-263AB
6000
全新原装深圳仓库现货有单必成
MCC/美微科
23+
D2-PAK
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
ON
1415+
TO-263
28500
全新原装正品,优势热卖
DIODES/美台
25+
TO263AB(D2PAK)
918000
明嘉莱只做原装正品现货
MCC
25+
电联咨询
7800
公司现货,提供拆样技术支持
DIODES/美台
24+
TO-263AB
25000
原装正品公司现货,假一赔十!
Vishay Semiconductor Diodes Di
22+
TO263AB
9000
原厂渠道,现货配单
ON(安森美)
26+
NA
60000
只有原装 可配单
CJ
17+
TO-263
6039
全新原装正品s

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