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MBRB10100CT价格
参考价格:¥1.6373
型号:MBRB10100CT 品牌:Diodes Incorporated 备注:这里有MBRB10100CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBRB10100CT批发/采购报价,MBRB10100CT行情走势销售排行榜,MBRB10100CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRB10100CT | Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世威世科技公司 | ||
MBRB10100CT | 10 Amp Schottky Barrier Rectifier 100 Volts Features • Metal of Silicon Rectifier, Majority Carrier Conduction • Low Power Loss • High Current Capability, High Efficiency • Guard Ring For Transient Protection • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy | MCC | ||
MBRB10100CT | Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFE RFE international | ||
MBRB10100CT | 2SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling | BILIN 银河微电 | ||
MBRB10100CT | MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol | VAISH 威世 | ||
MBRB10100CT | SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | ||
MBRB10100CT | MBRB10100CT SCHOTTKY RECTIFIER Features 150℃ TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free | SMCDIODE 桑德斯微电子 | ||
MBRB10100CT | Dual Schottky Barrier Rectifiers Reverse Voltage 100 Volts , Forward Current 10A Reverse Voltage 100 Volts , Forward Current 10A Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardring | FS | ||
MBRB10100CT | 10A Surface Mount High Power Schottky Barrier Rectifiers 文件:102.64 Kbytes Page:3 Pages | CITC 竹懋科技 | ||
MBRB10100CT | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE SCHOTTKY 100V 5A TO263 分立半导体产品 二极管 - 整流器 - 阵列 | Littelfuse 力特 | ||
MBRB10100CT | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:DIODE SCHOTTKY 100V 10A D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | ||
MBRB10100CT | 10A,100V,Schottky Barrier Rectifiers | GALAXY 银河微电 | ||
MBRB10100CT | 肖特基二极管 | MCC | ||
MBRB10100CT | Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance | VishayVishay Siliconix 威世威世科技公司 | ||
MBRB10100CT | Schottky Diode in a TO-263 Plastic Package 文件:655.22 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | ||
MBRB10100CT | SCHOTTKY BARRIER RECTIFIER 文件:704.58 Kbytes Page:4 Pages | JIANGSU 长电科技 | ||
MBRB10100CT | Product Specification 文件:514.53 Kbytes Page:7 Pages | Good-Ark 固锝电子 | ||
MBRB10100CT | Free-wheeling diodes 文件:591.84 Kbytes Page:3 Pages | Littelfuse 力特 | ||
MBRB10100CT | 10A SCHOTTKY BARRIER RECTIFIER 文件:494.01 Kbytes Page:6 Pages | DIODES 美台半导体 | ||
MBRB10100CT | 10A SCHOTTKY BARRIER RECTIFIER 文件:576.12 Kbytes Page:5 Pages | DIODES 美台半导体 | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance | VishayVishay Siliconix 威世威世科技公司 | |||
Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ | RFE RFE international | |||
10A SCHOTTKY BARRIER RECTIFIER 文件:576.12 Kbytes Page:5 Pages | DIODES 美台半导体 | |||
10 Amp Schottky Barrier Rectifier 100 Volts 文件:236.23 Kbytes Page:3 Pages | MCC | |||
10A SCHOTTKY BARRIER RECTIFIER 文件:576.12 Kbytes Page:5 Pages | DIODES 美台半导体 | |||
10A SCHOTTKY BARRIER RECTIFIER 文件:494.01 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
High Voltage Trench MOS Barrier Schottky Rectifier 文件:691.41 Kbytes Page:6 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
High Voltage Trench MOS Barrier Schottky Rectifier 文件:691.41 Kbytes Page:6 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
SCHOTTKY BARRIER RECTIFIER 文件:965.72 Kbytes Page:4 Pages | JIANGSU 长电科技 | |||
High Voltage Trench MOS Barrier Schottky Rectifier 文件:691.41 Kbytes Page:6 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Quad 2-Input NOR Gate with Strobe
| Philips 飞利浦 | |||
Quad 2-Input NOR Gate with Strobe
| Philips 飞利浦 | |||
Quad 2-Input NOR Gate with Strobe
| Philips 飞利浦 | |||
Smooth, high torque, roller ratchet handle 文件:254.3 Kbytes Page:3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Nylon PCB Supports - Imperial Spacing 文件:126.42 Kbytes Page:1 Pages | Heyco |
MBRB10100CT产品属性
- 类型
描述
- 型号
MBRB10100CT
- 制造商
VAISH
- 制造商全称
VAISH
- 功能描述
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
TO-263AB |
6000 |
全新原装深圳仓库现货有单必成 |
|||
MCC/美微科 |
23+ |
D2-PAK |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
1415+ |
TO-263 |
28500 |
全新原装正品,优势热卖 |
|||
DIODES/美台 |
25+ |
TO263AB(D2PAK) |
918000 |
明嘉莱只做原装正品现货 |
|||
MCC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
DIODES/美台 |
24+ |
TO-263AB |
25000 |
原装正品公司现货,假一赔十! |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
CJ |
17+ |
TO-263 |
6039 |
全新原装正品s |
MBRB10100CT规格书下载地址
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