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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR8100 | 8.0ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtection | DIODESDiodes Incorporated 达尔科技 | ||
MBR8100 | WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | ||
MBR8100 | SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
MBR8100 | SCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200VoltsCURRENT8Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvol | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
MBR8100 | SchottkyBarrierRectifierReverseVoltage40to200VForwardCurrent8.0A ReverseVoltage40to200V ForwardCurrent8.0A Features •LowPowerLoss,HighEfficiency •LowForwardVoltageDrop •HighCurrentCapability •LeadandbodyaccordingwithRoHSstandard | DACHANGRugao Dachang Electronics Co., Ltd 如皋市大昌如皋市大昌电子有限公司 | ||
MBR8100 | SCHOTTKYBARRIERRECTIFIERS FEATURES ●Metalofsiliconrectifier,majoritycarrierconduction ●Guardringfortransientprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowVF ●Highsurgecapacity ●PlasticpackagehasULflammabilityclassification94V-0 ●Foruseinlowvoltage,highfrequenc | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | ||
MBR8100 | SchottkyBarrierRectifier FEATURES •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss/HighEfficiency •HighSurgeCapability •HighCurrentCapability,LowForwardVoltageDrop •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATI | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MBR8100 | HighCurrentCapability,LowVF FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBR8100 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to100VoltsForwardCurrent-8.0Amperes FEATURES ♦TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ♦Constructionutilizesvoid-freemoldedplastictechnique ♦Lowreverseleakage ♦Highforwardsurgecurrentcapability ♦High | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 | ||
MBR8100 | WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBR8100 | 8.0ASCHOTTKYBARRIERDIODE Features ●ClassificationRating94V-O ●PlasticCaseMaterialhasULFlammability ●GuardRingDieConstruction ●ForUseinLowVoltageApplication ●LowPowerLoss,HighEfficiency ●IdeallySuitedforAutomaticAssembly ●SchottkyBarrierChip | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ||
MBR8100 | SchottkyBarrierRectifiers VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
MBR8100 | SCHOTTKYBARRIERRECTIFIERS 文件:141.68 Kbytes Page:3 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | ||
MBR8100 | HighTjmLowIRRMSchottkyBarrierDiodes 文件:91.71 Kbytes Page:2 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | ||
MBR8100 | 8AmpSchottkyRectifier70-100Volts 文件:187.5 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
MBR8100 | SchottkyBarrierRectifier 文件:151.45 Kbytes Page:2 Pages | DACHANGRugao Dachang Electronics Co., Ltd 如皋市大昌如皋市大昌电子有限公司 | ||
MBR8100 | SCHOTTKYDiodes 文件:116.51 Kbytes Page:2 Pages | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | ||
MBR8100 | SCHOTTKYBARRIERRECTIFIER 文件:487.18 Kbytes Page:2 Pages | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 | ||
MBR8100 | SchottkyBarrierRecitifiers 文件:443.78 Kbytes Page:3 Pages | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 | ||
SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to100Volts ForwardCurrent-8.0Amperes FEATURES ●TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ●Constructionutilizesvoid-free ●moldedplastictechnique ●Lowreverseleakage ●Highforwardsurge | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 | |||
SCHOTTKYBARRIERRECTIFIERS Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
SCHOTTKYBARRIERRECTIFIER VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvolt | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
D2PAKSURFACEMOUNTSCHOTTKYBARRIERRECTIFIER VOLTAGE40to200VoltsCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvolt | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
D2PAKSURFACEMOUNTSCHOTTKYBARRIERRECTIFIER VOLTAGE40to200VoltCURRENT8Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •Lowpowerloss,highefficiency. •Lowforwardvoltge,highcurrentcapability •Highsurgecapacity. • | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
SCHOTTKYBARRIERRECTIFIERS VOLTAGE40to200VoltsCURRENT8Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvol | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
SCHOTTKYBARRIERRECTIFIER VOLTAGE40to200VoltsCURRENT8Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Lowpowerloss,highefficiency. •Lowforwrdvol | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
8.0ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtection | DIODESDiodes Incorporated 达尔科技 | |||
SchottkyBarrierChip Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtection | KERSEMI Kersemi Electronic Co., Ltd. | |||
SCHOTTKYBARRIERRECTIFIER 文件:654.54 Kbytes Page:2 Pages | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 | |||
SCHOTTKYBARRIERRECTIFIERS 文件:1.18984 Mbytes Page:3 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
8.0ASCHOTTKYBARRIERDIODE 文件:148.11 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
SCHOTTKYBARRIERRECTIFIERS 文件:1.23819 Mbytes Page:3 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
8.0ASCHOTTKYBARRIERDIODE 文件:139.54 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 单 | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
8.0ASCHOTTKYBARRIERDIODE 文件:147.05 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 阵列 | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
SurfaceMountSchottkyBarrierRectifier 文件:477.98 Kbytes Page:3 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
8.0ASCHOTTKYBARRIERDIODE 文件:146.24 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
HighTjmLowIRRMSchottkyBarrierDiodes 文件:89.85 Kbytes Page:2 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
GaAs,pHEMT,MMIC,LowNoiseAmplifier,0.01GHzto20GHz GENERALDESCRIPTION TheADL8100isagalliumarsenide(GaAs),monolithicmicrowave integratedcircuit(MMIC),pseudomorphichighelectronmobility transistor(pHEMT),widebandlownoiseamplifier(LNA)thatoperates from0.01GHzto20GHz.TheADL8100providesatypical gainof20dBat0.01 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
GaAs,pHEMT,MMIC,LowNoiseAmplifier,0.01GHzto20GHz GENERALDESCRIPTION TheADL8100isagalliumarsenide(GaAs),monolithicmicrowave integratedcircuit(MMIC),pseudomorphichighelectronmobility transistor(pHEMT),widebandlownoiseamplifier(LNA)thatoperates from0.01GHzto20GHz.TheADL8100providesatypical gainof20dBat0.01 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
GaAs,pHEMT,MMIC,LowNoiseAmplifier,0.01GHzto20GHz GENERALDESCRIPTION TheADL8100isagalliumarsenide(GaAs),monolithicmicrowave integratedcircuit(MMIC),pseudomorphichighelectronmobility transistor(pHEMT),widebandlownoiseamplifier(LNA)thatoperates from0.01GHzto20GHz.TheADL8100providesatypical gainof20dBat0.01 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
T1/CEPTISDNPRITransformers 文件:84.67 Kbytes Page:1 Pages | FILTRAN FILTRAN Group | |||
ReflectiveSurfaceMountOpticalEncoder 文件:138.89 Kbytes Page:10 Pages | AVAGOAvago 安华高安华高科技 |
MBR8100产品属性
- 类型
描述
- 型号
MBR8100
- 制造商
SIRECTIFIER
- 制造商全称
Sirectifier Semiconductors
- 功能描述
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LITEON |
07+ |
TO-220 |
7640 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LITEON/光宝 |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
|||
LITEON/光宝 |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
LITEON/光宝 |
07+ |
TO-220 |
7640 |
||||
LITEON/Liteon Semiconductor Co |
21+ |
TO-220 |
7640 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PANJIT |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
LT |
22+23+ |
TO-220 |
28936 |
绝对原装正品全新进口深圳现货 |
|||
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
LITEON/光宝 |
23+ |
NA/ |
10890 |
原装现货,当天可交货,原型号开票 |
|||
LITEON/光宝 |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
MBR8100规格书下载地址
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