型号 功能描述 生产厂家 企业 LOGO 操作
MBR8100

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

MBR8100

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

MBR8100

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

BILIN

银河微电

MBR8100

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol

PANJIT

強茂

MBR8100

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 8.0 A

Reverse Voltage 40 to 200 V Forward Current 8.0 A Features • Low Power Loss, High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard

DACHANG

大昌电子

MBR8100

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc

HY

虹扬科技

MBR8100

Schottky Barrier Rectifier

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss/High Efficiency • High Surge Capability • High Current Capability, Low Forward Voltage Drop • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

ISC

无锡固电

MBR8100

High Current Capability, Low VF

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

KERSEMI

MBR8100

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High

CHENDA

辰达半导体

MBR8100

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

KERSEMI

MBR8100

8.0 A SCHOTTKY BARRIER DIODE

Features ● Classification Rating 94V-O ● Plastic Case Material has UL Flammability ● Guard Ring Die Construction ● For Use in Low Voltage Application ● Low Power Loss, High Efficiency ● Ideally Suited for Automatic Assembly ● Schottky Barrier Chip

ZSELEC

淄博圣诺

MBR8100

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ The pl

LUGUANG

鲁光电子

MBR8100

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco

SY

顺烨电子

MBR8100

Schottky Barrier Recitifiers

文件:443.78 Kbytes Page:3 Pages

HY

虹扬科技

MBR8100

功率肖特基二极管(IF ≧ 1A)

PANJIT

強茂

MBR8100

SCHOTTKY BARRIER RECTIFIERS

文件:141.68 Kbytes Page:3 Pages

HY

虹扬科技

MBR8100

High Tjm Low IRRM Schottky Barrier Diodes

文件:91.71 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR8100

SCHOTTKY Diodes

文件:116.51 Kbytes Page:2 Pages

YANGJIE

扬杰电子

MBR8100

SCHOTTKY BARRIER RECTIFIER

文件:487.18 Kbytes Page:2 Pages

CHENDA

辰达半导体

MBR8100

8 Amp Schottky Rectifier 70-100 Volts

文件:187.5 Kbytes Page:3 Pages

MCC

MBR8100

Schottky Barrier Rectifier

文件:151.45 Kbytes Page:2 Pages

DACHANG

大昌电子

SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge

CHENDA

辰达半导体

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt

PANJIT

強茂

D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volt CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • Low forward voltge, high current capability • High surge capacity. •

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol

PANJIT

強茂

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

Schottky Barrier Chip

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

KERSEMI

SCHOTTKY BARRIER RECTIFIER

文件:654.54 Kbytes Page:2 Pages

CHENDA

辰达半导体

8.0 A SCHOTTKY BARRIER DIODE

文件:148.11 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

SCHOTTKY BARRIER RECTIFIERS

文件:1.18984 Mbytes Page:3 Pages

DYELEC

迪一电子

SCHOTTKY BARRIER RECTIFIERS

文件:1.23819 Mbytes Page:3 Pages

DYELEC

迪一电子

8.0 A SCHOTTKY BARRIER DIODE

文件:139.54 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

肖特基二极管 Schottky Barrier Diodes

SENODIA

深迪半导体

功率肖特基二极管(IF ≧ 1A)

PANJIT

強茂

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

8.0A SCHOTTKY BARRIER DIODE

文件:147.05 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Surface Mount Schottky Barrier Rectifier

文件:477.98 Kbytes Page:3 Pages

YFWDIODE

佑风微

8.0 A SCHOTTKY BARRIER DIODE

文件:146.24 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

High Tjm Low IRRM Schottky Barrier Diodes

文件:89.85 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

64b/66MHz Metering PMC to PMC extender

The Metering PMC to PMC extender is a comprehensive development tool for use with PMC cards on a VMEbus, Compact PCI, or other carrier card.

ELMA

Gender Changers & Port Savers Low Profile Gender Changers

Features & Benefits Compact space saving design Competitive price without compromise to quality Comprehensive selection of connector types

VIDEK

Ring and Spade Terminals

文件:187.51 Kbytes Page:1 Pages

HEYCO

METAL CABLE CLAMPS

文件:279.99 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

T1/CEPT ISDN PRI Transformers

文件:84.67 Kbytes Page:1 Pages

FILTRAN

费尔兰特

MBR8100产品属性

  • 类型

    描述

  • 型号

    MBR8100

  • 制造商

    SIRECTIFIER

  • 制造商全称

    Sirectifier Semiconductors

  • 功能描述

    肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。

更新时间:2026-3-1 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LITEON/光宝
07+
TO-220
7640
LT
25+23+
TO-220
28936
绝对原装正品全新进口深圳现货
LITEON/光宝
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
LITEON
07+
TO-220
7640
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MCC
17+
TO-220AC
6200
MCC
26+
TO-220
86720
全新原装正品价格最实惠 承诺假一赔百
MCC/美微科
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
PANJIT
22+
TO-220-2
20000
公司只做原装 品质保障
PANJIT
22+
TO-220F
6000
十年配单,只做原装
LITEON
23+
TO-220
7640
全新原装正品现货,支持订货

MBR8100数据表相关新闻