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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR8100 | 8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODESDiodes Incorporated 美台半导体 | ||
MBR8100 | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | ||
MBR8100 | SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
MBR8100 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | ||
MBR8100 | SCHOTTKY BARRIER RECTIFIERS FEATURES ● Metal of silicon rectifier , majority carrier conduction ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Plastic package has UL flammability classification 94V-0 ● For use in low voltage,high frequenc | HY HY ELECTRONIC CORP. | ||
MBR8100 | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 8.0 A Reverse Voltage 40 to 200 V Forward Current 8.0 A Features • Low Power Loss, High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard | DACHANGRugao Dachang Electronics Co., Ltd 大昌电子如皋市大昌电子有限公司 | ||
MBR8100 | Schottky Barrier Rectifier FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss/High Efficiency • High Surge Capability • High Current Capability, Low Forward Voltage Drop • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MBR8100 | High Current Capability, Low VF FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBR8100 | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ High | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰达半导体深圳辰达半导体有限公司 | ||
MBR8100 | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | KERSEMI Kersemi Electronic Co., Ltd. | ||
MBR8100 | 8.0 A SCHOTTKY BARRIER DIODE Features ● Classification Rating 94V-O ● Plastic Case Material has UL Flammability ● Guard Ring Die Construction ● For Use in Low Voltage Application ● Low Power Loss, High Efficiency ● Ideally Suited for Automatic Assembly ● Schottky Barrier Chip | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ||
MBR8100 | Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ The pl | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
MBR8100 | SCHOTTKY BARRIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | ||
MBR8100 | Schottky Barrier Recitifiers 文件:443.78 Kbytes Page:3 Pages | HY HY ELECTRONIC CORP. | ||
MBR8100 | SCHOTTKY BARRIER RECTIFIERS 文件:141.68 Kbytes Page:3 Pages | HY HY ELECTRONIC CORP. | ||
MBR8100 | High Tjm Low IRRM Schottky Barrier Diodes 文件:91.71 Kbytes Page:2 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | ||
MBR8100 | SCHOTTKY Diodes 文件:116.51 Kbytes Page:2 Pages | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | ||
MBR8100 | SCHOTTKY BARRIER RECTIFIER 文件:487.18 Kbytes Page:2 Pages | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰达半导体深圳辰达半导体有限公司 | ||
MBR8100 | 8 Amp Schottky Rectifier 70-100 Volts 文件:187.5 Kbytes Page:3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
MBR8100 | Schottky Barrier Rectifier 文件:151.45 Kbytes Page:2 Pages | DACHANGRugao Dachang Electronics Co., Ltd 大昌电子如皋市大昌电子有限公司 | ||
SCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -8.0 Amperes FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰达半导体深圳辰达半导体有限公司 | |||
SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd volt | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volt CURRENT 8 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • Low forward voltge, high current capability • High surge capacity. • | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
SCHOTTKY BARRIER RECTIFIER VOLTAGE 40 to 200 Volts CURRENT 8 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vol | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
8.0A SCHOTTKY BARRIER RECTIFIER Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODESDiodes Incorporated 美台半导体 | |||
Schottky Barrier Chip Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | KERSEMI Kersemi Electronic Co., Ltd. | |||
SCHOTTKY BARRIER RECTIFIER 文件:654.54 Kbytes Page:2 Pages | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰达半导体深圳辰达半导体有限公司 | |||
8.0 A SCHOTTKY BARRIER DIODE 文件:148.11 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
SCHOTTKY BARRIER RECTIFIERS 文件:1.18984 Mbytes Page:3 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
SCHOTTKY BARRIER RECTIFIERS 文件:1.23819 Mbytes Page:3 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
8.0 A SCHOTTKY BARRIER DIODE 文件:139.54 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 单 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
8.0A SCHOTTKY BARRIER DIODE 文件:147.05 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:D PAK SURFACE MOUNT SCHOTTKY BAR 分立半导体产品 二极管 - 整流器 - 阵列 | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
Surface Mount Schottky Barrier Rectifier 文件:477.98 Kbytes Page:3 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
8.0 A SCHOTTKY BARRIER DIODE 文件:146.24 Kbytes Page:2 Pages | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | |||
High Tjm Low IRRM Schottky Barrier Diodes 文件:89.85 Kbytes Page:2 Pages | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz GENERAL DESCRIPTION The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical gain of 20 dB at 0.01 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz GENERAL DESCRIPTION The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical gain of 20 dB at 0.01 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
T1/CEPT ISDN PRI Transformers 文件:84.67 Kbytes Page:1 Pages | FILTRANFiltran LTD 费尔兰特 | |||
Ring and Spade Terminals 文件:187.51 Kbytes Page:1 Pages | HeycoHeyco. 海科 | |||
Saw Filter 文件:745.2 Kbytes Page:5 Pages | ACT Advanced Crystal Technology |
MBR8100产品属性
- 类型
描述
- 型号
MBR8100
- 制造商
SIRECTIFIER
- 制造商全称
Sirectifier Semiconductors
- 功能描述
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
LITEON/光宝 |
24+ |
NA/ |
10890 |
原装现货,当天可交货,原型号开票 |
|||
LITEON |
07+ |
TO-220 |
7640 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LITEON/光宝 |
07+ |
TO-220 |
7640 |
||||
LITEON/光宝 |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
MCC |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
PANJIT |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
MDD |
21+ |
TO-220AC |
12588 |
原装正品,价格优势 |
|||
LT |
25+23+ |
TO-220 |
28936 |
绝对原装正品全新进口深圳现货 |
|||
MCC |
17+ |
TO-220AC |
6200 |
||||
PANJIT/强茂 |
23+ |
TO-TO-220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
MBR8100规格书下载地址
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