8.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

Schottky Barrier Chip

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

High Tjm Low IRRM Schottky Barrier Diodes

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萧特基二极体 - Leaded Rectifier-MBR series

GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz

GENERAL DESCRIPTION The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical gain of 20 dB at 0.01

GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz

GENERAL DESCRIPTION The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical gain of 20 dB at 0.01

T1/CEPT ISDN PRI Transformers

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Ring and Spade Terminals

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Saw Filter

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