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MBR6030

60A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

MBR6030

60 Amp Schottky Barrier Rectifier 30 to 45 Volts

Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss

MCC

MBR6030

Schottky Power Diode, 60A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

MBR6030

SCHOTTKY DIODES STUD TYPE 60A

文件:81.79 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MBR6030

Silicon Power Schottky Diode

文件:807.65 Kbytes Page:3 Pages

GENESIC

MBR6030

SCHOTTKY DIODES STUD TYPE 60 A

文件:122.18 Kbytes Page:2 Pages

TEL

MBR6030

封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:DIODE SCHOTTKY 30V 60A DO5 分立半导体产品 二极管 - 整流器 - 单

GENESIC

MBR6030

60 Amp Schottky Barrier Rectifier 30 to 45 Volts

MCC

MBR6030

Diode Schottky 30V 60A 2-Pin DO-5

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MBR6030

Schottky Diodes

DACO

罡境电子

Schottky Barrier Rectifier

FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performanc

ISC

无锡固电

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammabi

SIRECTIFIER

矽莱克电子

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r

DSK

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

LUGUANG

鲁光电子

60 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

60 Amp Schottky Barrier Rectifier 30 to 45 Volts

Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss

MCC

60A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

COMCHIP

典琦

Schottky Power Diode, 60A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

MBR6030WT SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

SMCDIODE

桑德斯微电子

60A ULTRA FAST RECOVERY RECTIFIER

文件:892.93 Kbytes Page:4 Pages

DIGITRON

High Tjm Low IRRM Schottky Barrier Diodes

文件:133.82 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

60A SCHOTTKY BARRIER RECTIFIER

文件:65.62 Kbytes Page:3 Pages

DIODES

美台半导体

60A SCHOTTKY BARRIER RECTIFIER

文件:71.7 Kbytes Page:3 Pages

DIODES

美台半导体

High Tjm Low IRRM Schottky Barrier Diodes

文件:133.82 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

60A SCHOTTKY BARRIER RECTIFIER

文件:65.62 Kbytes Page:3 Pages

DIODES

美台半导体

SCHOTTKY DIODES STUD TYPE 60 A

文件:122.18 Kbytes Page:2 Pages

TEL

SCHOTTKY DIODES STUD TYPE 60A

文件:81.79 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Power Schottky Diode

文件:807.65 Kbytes Page:3 Pages

GENESIC

封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:DIODE SCHOTTKY REV 30V DO5 分立半导体产品 二极管 - 整流器 - 单

GENESIC

Guard ring for enhanced ruggedness and long term reliability

文件:208.78 Kbytes Page:5 Pages

SMC

桑德斯微电子

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO

STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes)

文件:230.18 Kbytes Page:2 Pages

RECTRON

丽正

MBR6030产品属性

  • 类型

    描述

  • Io@Tj(A):

    60

  • IFSM(A):

    700

  • IR@Tj(mA):

    20

  • Designation:

    DO-5

  • Type:

    Discrete

  • Compliance:

    ' ''>

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes Incorporated
25+
TO-3P
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
Diodes Incorporated
25+
TO-3P
6843
样件支持,可原厂排单订货!
MOTOROLA/摩托罗拉
20+
DO-5
67500
原装优势主营型号-可开原型号增税票
DIODES
12+
TO3P
106
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES
23+
TO-3P
8000
专做原装正品,假一罚百!
MOT
25+
10
公司优势库存 热卖中!
DIODES
25+
TO-247
20000
原装
MOTOROLA
24+
MODULE
2050
公司大量全新原装 正品 随时可以发货
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
DIODES
20+
TO-247-3
502
全新 发货1-2天

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