| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR6030 | 60A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | ||
MBR6030 | 60 Amp Schottky Barrier Rectifier 30 to 45 Volts Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss | MCC | ||
MBR6030 | Schottky Power Diode, 60A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity | NAINA | ||
MBR6030 | SCHOTTKY DIODES STUD TYPE 60A 文件:81.79 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MBR6030 | Silicon Power Schottky Diode 文件:807.65 Kbytes Page:3 Pages | GENESIC | ||
MBR6030 | SCHOTTKY DIODES STUD TYPE 60 A 文件:122.18 Kbytes Page:2 Pages | TEL | ||
MBR6030 | 封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:DIODE SCHOTTKY 30V 60A DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC | ||
MBR6030 | 60 Amp Schottky Barrier Rectifier 30 to 45 Volts | MCC | ||
MBR6030 | Diode Schottky 30V 60A 2-Pin DO-5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MBR6030 | Schottky Diodes | DACO 罡境电子 | ||
Schottky Barrier Rectifier FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performanc | ISC 无锡固电 | |||
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammabi | SIRECTIFIER 矽莱克电子 | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | DSK | |||
Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | |||
60 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | |||
60 Amp Schottky Barrier Rectifier 30 to 45 Volts Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss | MCC | |||
60A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | |||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
Schottky Power Diode, 60A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity | NAINA | |||
MBR6030WT SCHOTTKY RECTIFIER Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a | SMCDIODE 桑德斯微电子 | |||
60A ULTRA FAST RECOVERY RECTIFIER 文件:892.93 Kbytes Page:4 Pages | DIGITRON | |||
High Tjm Low IRRM Schottky Barrier Diodes 文件:133.82 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | |||
60A SCHOTTKY BARRIER RECTIFIER 文件:65.62 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
60A SCHOTTKY BARRIER RECTIFIER 文件:71.7 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
High Tjm Low IRRM Schottky Barrier Diodes 文件:133.82 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | |||
60A SCHOTTKY BARRIER RECTIFIER 文件:65.62 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
SCHOTTKY DIODES STUD TYPE 60 A 文件:122.18 Kbytes Page:2 Pages | TEL | |||
SCHOTTKY DIODES STUD TYPE 60A 文件:81.79 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon Power Schottky Diode 文件:807.65 Kbytes Page:3 Pages | GENESIC | |||
封装/外壳:DO-203AB,DO-5,接线柱 包装:散装 描述:DIODE SCHOTTKY REV 30V DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC | |||
Guard ring for enhanced ruggedness and long term reliability 文件:208.78 Kbytes Page:5 Pages | SMC 桑德斯微电子 | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | |||
N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with | FAIRCHILD 仙童半导体 | |||
N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with | FAIRCHILD 仙童半导体 | |||
LOW DROP POWER SCHOTTKY RECTIFIER DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO | STMICROELECTRONICS 意法半导体 | |||
SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes) 文件:230.18 Kbytes Page:2 Pages | RECTRON 丽正 |
MBR6030产品属性
- 类型
描述
- Io@Tj(A):
60
- IFSM(A):
700
- IR@Tj(mA):
20
- Designation:
DO-5
- Type:
Discrete
- Compliance:
' ''>
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
25+ |
TO-3P |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Diodes Incorporated |
25+ |
TO-3P |
6843 |
样件支持,可原厂排单订货! |
|||
MOTOROLA/摩托罗拉 |
20+ |
DO-5 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
DIODES |
12+ |
TO3P |
106 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES |
23+ |
TO-3P |
8000 |
专做原装正品,假一罚百! |
|||
MOT |
25+ |
10 |
公司优势库存 热卖中! |
||||
DIODES |
25+ |
TO-247 |
20000 |
原装 |
|||
MOTOROLA |
24+ |
MODULE |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
DIODES |
20+ |
TO-247-3 |
502 |
全新 发货1-2天 |
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DdatasheetPDF页码索引
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