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MBR6030PT

60A SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

DIODES

美台半导体

MBR6030PT

60 Amp Schottky Barrier Rectifier 30 to 45 Volts

Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss

MCC

MBR6030PT

60 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili

PANJIT

強茂

MBR6030PT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammabi

SIRECTIFIER

矽莱克电子

MBR6030PT

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

LUGUANG

鲁光电子

MBR6030PT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r

DSK

MBR6030PT

60 Amp Schottky Barrier Rectifier 30 to 45 Volts

·  Meatl of Silicon Rectifier, Majority Conducton\n·  Guard ring for transient protection\n·  Low Forward Voltage Drop\n·  High Current Capability, High Efficiency\n·  Low Power Loss;

MCC

MBR6030PT

肖特基二极管

LUGUANG

鲁光电子

MBR6030PT

Schottky

DIODES

美台半导体

MBR6030PT

封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 30V TO3P 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

MBR6030PT

High Tjm Low IRRM Schottky Barrier Diodes

文件:133.82 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

MBR6030PT

60A SCHOTTKY BARRIER RECTIFIER

文件:65.62 Kbytes Page:3 Pages

DIODES

美台半导体

Schottky Barrier Rectifier

Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability.

COMCHIP

典琦

60A SCHOTTKY BARRIER RECTIFIER

文件:71.7 Kbytes Page:3 Pages

DIODES

美台半导体

High Tjm Low IRRM Schottky Barrier Diodes

文件:133.82 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

60A SCHOTTKY BARRIER RECTIFIER

文件:65.62 Kbytes Page:3 Pages

DIODES

美台半导体

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO

STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes)

文件:230.18 Kbytes Page:2 Pages

RECTRON

丽正

MBR6030PT产品属性

  • 类型

    描述

  • AutomotiveCompliantPPAP:

    No

  • Configuration:

    Dual

  • MaximumAverageRectifiedCurrentIO:

    60A

  • @TerminalTemperatureTT:

    125ºC

  • PeakRepetitiveReverseVoltageVRRM:

    30V

  • PeakForwardSurgeCurrentIFSM:

    500A

  • ForwardVoltageDropVF:

    0.62V

  • @IF:

    30A

  • MaximumReverseCurrentIR:

    1000µA

  • @VR:

    30V

  • ReverseRecoveryTimetrr:

    N/Ans

  • TotalCapacitanceCT:

    650pF

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes Incorporated
25+
TO-3P
6843
样件支持,可原厂排单订货!
Diodes Incorporated
25+
TO-3P
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES
22+
TO-247
20000
公司只做原装 品质保障
DIODES
23+
TO-3P
8000
专做原装正品,假一罚百!
DIODES
25+
TO-247
20000
原装
DIODES
20+
TO-247-3
502
全新 发货1-2天
ON/DIODES/PANJIT
24+
TO3P
43000
Diodes
26+
TO-220
86720
全新原装正品价格最实惠 承诺假一赔百
Diodes
22+
TO3P
9000
原厂渠道,现货配单
DIODES/美台
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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