| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR6030PT | 60A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | ||
MBR6030PT | 60 Amp Schottky Barrier Rectifier 30 to 45 Volts Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss | MCC | ||
MBR6030PT | 60 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | ||
MBR6030PT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammabi | SIRECTIFIER 矽莱克电子 | ||
MBR6030PT | Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | ||
MBR6030PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | DSK | ||
MBR6030PT | 60 Amp Schottky Barrier Rectifier 30 to 45 Volts · Meatl of Silicon Rectifier, Majority Conducton\n· Guard ring for transient protection\n· Low Forward Voltage Drop\n· High Current Capability, High Efficiency\n· Low Power Loss; | MCC | ||
MBR6030PT | 肖特基二极管 | LUGUANG 鲁光电子 | ||
MBR6030PT | Schottky | DIODES 美台半导体 | ||
MBR6030PT | 封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 30V TO3P 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | ||
MBR6030PT | High Tjm Low IRRM Schottky Barrier Diodes 文件:133.82 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR6030PT | 60A SCHOTTKY BARRIER RECTIFIER 文件:65.62 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
60A SCHOTTKY BARRIER RECTIFIER 文件:71.7 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
High Tjm Low IRRM Schottky Barrier Diodes 文件:133.82 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | |||
60A SCHOTTKY BARRIER RECTIFIER 文件:65.62 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | |||
N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with | FAIRCHILD 仙童半导体 | |||
N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with | FAIRCHILD 仙童半导体 | |||
LOW DROP POWER SCHOTTKY RECTIFIER DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO | STMICROELECTRONICS 意法半导体 | |||
SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes) 文件:230.18 Kbytes Page:2 Pages | RECTRON 丽正 |
MBR6030PT产品属性
- 类型
描述
- AutomotiveCompliantPPAP:
No
- Configuration:
Dual
- MaximumAverageRectifiedCurrentIO:
60A
- @TerminalTemperatureTT:
125ºC
- PeakRepetitiveReverseVoltageVRRM:
30V
- PeakForwardSurgeCurrentIFSM:
500A
- ForwardVoltageDropVF:
0.62V
- @IF:
30A
- MaximumReverseCurrentIR:
1000µA
- @VR:
30V
- ReverseRecoveryTimetrr:
N/Ans
- TotalCapacitanceCT:
650pF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
25+ |
TO-3P |
6843 |
样件支持,可原厂排单订货! |
|||
Diodes Incorporated |
25+ |
TO-3P |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES |
22+ |
TO-247 |
20000 |
公司只做原装 品质保障 |
|||
DIODES |
23+ |
TO-3P |
8000 |
专做原装正品,假一罚百! |
|||
DIODES |
25+ |
TO-247 |
20000 |
原装 |
|||
DIODES |
20+ |
TO-247-3 |
502 |
全新 发货1-2天 |
|||
ON/DIODES/PANJIT |
24+ |
TO3P |
43000 |
||||
Diodes |
26+ |
TO-220 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
Diodes |
22+ |
TO3P |
9000 |
原厂渠道,现货配单 |
|||
DIODES/美台 |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
MBR6030PT规格书下载地址
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