SCHOTTKY DIE SPECIFICATION

[Micro-Electro-Magnetical Tech Co.] SCHOTTKY DIE SPECIFICATION General Description: 60 V 5 A ( Low Ir) Single Anode

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS FEATURES • Epitaxial Construction • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 150A Peak • For

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

5.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

5.0A 60V Schottky diode

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High Tjm Low IRRM Schottky Barrier Diodes

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Surface Mount Schottky Barrier Rectifier

FEATURES ♦ High current capability ♦ Low forward voltage drop ♦ High surge capability ♦ High temperature soldering guaranteed ♦ Mounting position: any ♦ Lead free in comply with EU RoHS 2011/65/EU directives

5.0 A SCHOTTKY BARRIER DIODE

5.0 A SCHOTTKY BARRIER DIODE ● Schottky Barrier Chip ● Ideally Suited for Automatic Assembly ● Low Power Loss, High Efficiency ● For Use in Low Voltage Application ● Guard Ring Die Construction ● Plastic Case Material has UL Flammability Classification Rating 94V-O

SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • For through hole applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling, a

SWITCHMODE Power Rectifier

Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Uni

SWITCHMODE Power Rectifier

Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Uni

SWITCHMODE Power Rectifier

Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Uni

SCHOTTKY RECTIFIER

Features: • Designed as Bypass Diodes for Solar Panels • High Forward Surge Capability • Ultra Low Forward Voltage Drop • Excellent High Temperature Stability • This is a Pb − Free Device • All SMC parts are traceable to the wafer lot • Additional testing can be offered upon request Applic

MBR560S SCHOTTKY RECTIFIER

Features Designed as Bypass Diodes for Solar Panels High Forward Surge Capability Ultra Low Forward Voltage Drop Excellent High Temperature Stability Terminals finish: 100 Pure Tin This is a Halogen Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered

SCHOTTKY BARRIER RECTIFIERS

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High Tjm Low IRRM Schottky Barrier Diodes

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肖特基二极管

Surface Mount Schottky Rectifiers

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肖特基二极管 Schottky Barrier Diodes

肖特基管

封装/外壳：8-PowerTDFN，5 引线 包装：管件 描述：DIODE SCHOTTKY 60V 5A 5DFN 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：8-PowerTDFN，5 引线 包装：散装 描述：DIODE SCHOTTKY 60V 5A 5DFN 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Schottky Rectifiers

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

HCMOS / TTL

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ELECTRONIC BREAKERLESS CONVERSION KIT

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SUBMINIATURE FUSEHOLDERS

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