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型号 功能描述 生产厂家 企业 LOGO 操作
MBR354

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L

DCCOM

道全

Schottky Power Diode, 35A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

SCHOTTKY DIODES STUD TYPE 35 A

SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM

TEL

Schottky Power Diode, 35A

Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

SCHOTTKY DIODES STUD TYPE 35 A

SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM

TEL

Not ESD Sensitive

Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive

GENESIC

Schottky Power Diode, 35A

Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

SCHOTTKY DIODES STUD TYPE 35 A

SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM

TEL

SCHOTTKY DIODES STUD TYPE 35 A

SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM

TEL

Schottky Power Diode, 35A

Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L

DCCOM

道全

35 Amp Rectifier 20 to 100 Volts Schottky Barrier

文件:115.54 Kbytes Page:2 Pages

MCC

Silicon Power Schottky Diode

文件:799.73 Kbytes Page:3 Pages

GENESIC

35 AMP SCHOTTKY BARRIER RECTIFIER

文件:108.73 Kbytes Page:2 Pages

DIGITRON

封装/外壳:DO-203AA,DO-4,接线柱 包装:散装 描述:DIODE SCHOTTKY REV 40V DO4 分立半导体产品 二极管 - 整流器 - 单

GENESIC

Diode Schottky 40V 35A 2-Pin DO-4

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Schottky Rectifiers

NAVITAS

纳微半导体

Silicon Power Schottky Diode

文件:799.73 Kbytes Page:3 Pages

GENESIC

Silicon Power Schottky Diode

文件:799.56 Kbytes Page:3 Pages

GENESIC

SCHOTTKY BARRIER RECTIFIERS

文件:45.69 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

35 Amp Rectifier 20 to 100 Volts Schottky Barrier

文件:115.54 Kbytes Page:2 Pages

MCC

Schottky Rectifiers

NAVITAS

纳微半导体

封装/外壳:DO-203AA,DO-4,接线柱 包装:卷带(TR) 描述:DIODE SCHOTTKY 45V 35A DO4 分立半导体产品 二极管 - 整流器 - 单

GENESIC

Not ESD Sensitive

文件:781.63 Kbytes Page:3 Pages

GENESIC

35 AMP SCHOTTKY BARRIER RECTIFIER

文件:108.73 Kbytes Page:2 Pages

DIGITRON

Silicon Power Schottky Diode

文件:799.56 Kbytes Page:3 Pages

GENESIC

Silicon Power Schottky Diode

文件:799.56 Kbytes Page:3 Pages

GENESIC

Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz

Description: The NTE354 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

NTE

LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS

文件:183.96 Kbytes Page:11 Pages

TI

德州仪器

LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS

文件:183.96 Kbytes Page:11 Pages

TI

德州仪器

LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS

文件:183.96 Kbytes Page:11 Pages

TI

德州仪器

LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS

文件:183.96 Kbytes Page:11 Pages

TI

德州仪器

MBR354产品属性

  • 类型

    描述

  • Io@Tj(A):

    35

  • IFSM(A):

    600

  • IR@Tj(mA):

    20

  • Designation:

    DO-4

  • Type:

    Discrete

  • Compliance:

    ' ''>

更新时间:2026-5-20 17:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
25+
1
公司优势库存 热卖中!
MOTOROLA
26+
DO-5
890000
一级总代理商原厂原装大批量现货 一站式服务
MOTOROLA
24+
MODULE
2050
公司大量全新原装 正品 随时可以发货
NSL
23+
35A40V
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
MCC
25+
N/A
15
百分百原装正品 真实公司现货库存 本公司只做原装 可
MOTOROLA/摩托罗拉
25+
MODULE
1493
主打螺丝模块系列
GeneSiC Semiconductor
24+
DO/TO
986
碳化硅二极管原厂正品全系列现货
MOT
24+
DO-4
2
MOTOROLA
专业铁帽
DO-5
5000
原装铁帽专营,代理渠道量大可订货
MOTOROLA/摩托罗拉
20+
DO-5
67500
原装优势主营型号-可开原型号增税票

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