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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR354W | TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 400 Amperes * L | DCCOM 道全 |   | |
Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz Description: The NTE354 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes | NTE | | ||
LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS 文件：183.96 Kbytes Page：11 Pages | TI 德州仪器 | | ||
LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS 文件：183.96 Kbytes Page：11 Pages | TI 德州仪器 | | ||
LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS 文件：183.96 Kbytes Page：11 Pages | TI 德州仪器 | | ||
LinCMOSE QUADRUPLE DIFFERENTIAL COMPARATORS 文件：183.96 Kbytes Page：11 Pages | TI 德州仪器 | |
MBR354W产品属性
- 类型
描述
- 型号
MBR354W
- 制造商
DCCOM
- 制造商全称
Dc Components
- 功能描述
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
MBR354W规格书下载地址
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DdatasheetPDF页码索引
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