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型号 功能描述 生产厂家 企业 LOGO 操作
MBR3545R

Schottky Power Diode, 35A

Schottky Power Diode, 35A Features • Fast Switching • Low forward voltage drop • High surge capability • High efficiency, low power loss • Normal and Reverse polarity

NAINA

MBR3545R

SCHOTTKY DIODES STUD TYPE 35 A

SCHOTTKYDIODES STUDTYPE 35 A 35Amp Rectifier 20-100 Volts Features High Surge Capability Types up to 100V VRRM

TEL

MBR3545R

封装/外壳:DO-203AA,DO-4,接线柱 包装:散装 描述:DIODE SCHOTTKY REV 45V DO4 分立半导体产品 二极管 - 整流器 - 单

GENESIC

MBR3545R

Schottky Rectifiers

NAVITAS

纳微半导体

MBR3545R

Silicon Power Schottky Diode

文件:799.56 Kbytes Page:3 Pages

GENESIC

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input

SUTEX

N-Channel Depletion-Mode Vertical DMOS FETs

Advanced DMOS Technology These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input

SUTEX

UNIVERSAL SINK DRIVER

文件:124.58 Kbytes Page:9 Pages

NJRC

日本无线

Fully integrated DECT transceiver

文件:116.73 Kbytes Page:28 Pages

PHILIPS

飞利浦

Fully integrated DECT transceiver

文件:116.73 Kbytes Page:28 Pages

PHILIPS

飞利浦

MBR3545R产品属性

  • 类型

    描述

  • Io@Tj(A):

    35

  • IFSM(A):

    600

  • IR@Tj(mA):

    20

  • Designation:

    DO-4

  • Type:

    Discrete

  • Compliance:

    ' ''>

更新时间:2026-8-3 18:11:00
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