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MBR3100价格
参考价格:¥1.2384
型号:MBR3100G 品牌:ON 备注:这里有MBR3100多少钱,2025年最近7天走势,今日出价,今日竞价,MBR3100批发/采购报价,MBR3100行情走势销售排行榜,MBR3100报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR3100 | 100 V 3 A ( Low Ir) Single Anode [MEMT] General Description: 100 V 3 A ( Low Ir) Single Anode | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
MBR3100 | SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inv | ONSEMI 安森美半导体 | ||
MBR3100 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen | PANJIT 強茂 | ||
MBR3100 | SCHOTTKY BARRIER RECTIFIERS FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications | CTC 沛伦 | ||
MBR3100 | 3A SCHOTTKY RECTIFIERS 3A SCHOTTKY RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | ||
MBR3100 | 3.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications | ZSELEC 淄博圣诺 | ||
MBR3100 | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description The MBR3100 is a high voltage Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR3 | DIODES 美台半导体 | ||
MBR3100 | Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel | ONSEMI 安森美半导体 | ||
MBR3100 | 3.0A 100V Schottky diode 文件:376.203 Kbytes Page:2 Pages | |||
MBR3100 | 3.0A 100V Schottky diode 文件:376.203 Kbytes Page:2 Pages | |||
MBR3100 | SCHOTTKY BARRIER RECTIFIERS 文件:98.57 Kbytes Page:2 Pages | CTC 沛伦 | ||
MBR3100 | Axial Lead Rectifier 文件:58.31 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | ||
MBR3100 | 封装/外壳:DO-201AA,DO-27,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 100V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
MBR3100 | 肖特基势垒整流器,100 V,3.0 A | ONSEMI 安森美半导体 | ||
MBR3100 | schottky-5a-and-above | DIODES 美台半导体 | ||
Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V 0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protecti | AITSEMI 创瑞科技 | |||
Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel | ONSEMI 安森美半导体 | |||
High Surge Capability DESCRIPTION The UTC MBR3100 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR3100 is suitable for free wheeling and p | UTC 友顺 | |||
High Surge Capability DESCRIPTION The UTC MBR3100 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR3100 is suitable for free wheeling and p | UTC 友顺 | |||
SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inv | ONSEMI 安森美半导体 | |||
Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel | ONSEMI 安森美半导体 | |||
Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel | ONSEMI 安森美半导体 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description The MBR3100 is a high voltage Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR3 | DIODES 美台半导体 | |||
Axial Lead Rectifier 文件:58.31 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件:271.47 Kbytes Page:9 Pages | DIODES 美台半导体 | |||
Surface Mount Schottky Barrier Rectifier 文件:477.48 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
SCHOTTKY DIODES | AITSEMI 创瑞科技 | |||
封装/外壳:DO-201AA,DO-27,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 100V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | |||
Axial Lead Rectifier 文件:58.31 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Axial Lead Rectifier 文件:58.31 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Axial Lead Rectifier 文件:58.31 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
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MBR3100产品属性
- 类型
描述
- 型号
MBR3100
- 功能描述
肖特基二极管与整流器 3A 100V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
DO201AD |
11024 |
原装正品,现货库存,1小时内发货 |
|||
ON/安森美 |
24+ |
NA/ |
14500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
24+ |
DO-201AD |
30000 |
原装正品公司现货,假一赔十! |
|||
24+ |
DO-201 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
||||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
DIODES/美台 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
2023+ |
DO-201 |
8635 |
全新原装正品,优势价格 |
|||
ON/安森美 |
21+ |
DO-201AD |
8080 |
只做原装,质量保证 |
|||
ON |
25+ |
DIA |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
MOT |
25+ |
100 |
公司优势库存 热卖中!! |
MBR3100芯片相关品牌
MBR3100规格书下载地址
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