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MBR3100价格

参考价格:¥1.2384

型号:MBR3100G 品牌:ON 备注:这里有MBR3100多少钱,2026年最近7天走势,今日出价,今日竞价,MBR3100批发/采购报价,MBR3100行情走势销售排行榜,MBR3100报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR3100

SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS

Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inv

ONSEMI

安森美半导体

MBR3100

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel

ONSEMI

安森美半导体

MBR3100

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description The MBR3100 is a high voltage Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR3

DIODES

美台半导体

MBR3100

100 V 3 A ( Low Ir) Single Anode

[MEMT] General Description: 100 V 3 A ( Low Ir) Single Anode

ETCList of Unclassifed Manufacturers

未分类制造商

MBR3100

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen

PANJIT

強茂

MBR3100

3A SCHOTTKY RECTIFIERS

3A SCHOTTKY RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

DIGITRON

MBR3100

3.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

ZSELEC

淄博圣诺

MBR3100

SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications

CTC

沛伦

MBR3100

肖特基势垒整流器,100 V,3.0 A

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, • Low Reverse Current\n• Low Stored Charge, Majority Carrier Conduction\n• Low Power Loss/High Efficiency\n• Highly Stable Oxide Passivated Junction\n• Guard-Ring for Stress Protection\n• Low Forward Voltage\n• 175°C Operating Junction Temperature\n• High Surge CapacityMechanical Characteristics:\n•;

ONSEMI

安森美半导体

MBR3100

schottky-5a-and-above

The MBR3100 is a high voltage Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required.

DIODES

美台半导体

MBR3100

3.0A 100V Schottky diode

文件:376.203 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

MBR3100

3.0A 100V Schottky diode

文件:376.203 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

MBR3100

SCHOTTKY BARRIER RECTIFIERS

文件:98.57 Kbytes Page:2 Pages

CTC

沛伦

MBR3100

Axial Lead Rectifier

文件:58.31 Kbytes Page:4 Pages

ONSEMI

安森美半导体

MBR3100

封装/外壳:DO-201AA,DO-27,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 100V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A

DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protecti

AITSEMI

创瑞科技

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel

ONSEMI

安森美半导体

High Surge Capability

DESCRIPTION The UTC MBR3100 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR3100 is suitable for free wheeling and p

UTC

友顺

High Surge Capability

DESCRIPTION The UTC MBR3100 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR3100 is suitable for free wheeling and p

UTC

友顺

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS

Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inv

ONSEMI

安森美半导体

Axial Lead Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheel

ONSEMI

安森美半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Description The MBR3100 is a high voltage Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR3

DIODES

美台半导体

Axial Lead Rectifier

文件:58.31 Kbytes Page:4 Pages

ONSEMI

安森美半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:271.47 Kbytes Page:9 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Rectifier

文件:477.48 Kbytes Page:3 Pages

YFWDIODE

佑风微

SCHOTTKY DIODES

AITSEMI

创瑞科技

封装/外壳:DO-201AA,DO-27,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 100V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Axial Lead Rectifier

文件:58.31 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Axial Lead Rectifier

文件:58.31 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Axial Lead Rectifier

文件:58.31 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

PANASONIC

松下

Photon Coupled Interrupter Module

Description: The NTE3100 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor on a plastic housing. The package system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. T

NTE

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

MOSPEC

统懋

MBR3100产品属性

  • 类型

    描述

  • AutomotiveCompliantPPAP:

    No

  • Configuration:

    Single

  • MaximumAverageRectifiedCurrentIO:

    3A

  • @TerminalTemperatureTT:

    N/AºC

  • PeakRepetitiveReverseVoltageVRRM:

    100V

  • PeakForwardSurgeCurrentIFSM:

    80A

  • ForwardVoltageDropVF:

    0.85V

  • @IF:

    3A

  • MaximumReverseCurrentIR:

    500µA

  • @VR:

    100V

  • ReverseRecoveryTimetrr:

    N/Ans

  • TotalCapacitanceCT:

    N/ApF

更新时间:2026-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
DO201AD
11024
原装正品,现货库存,1小时内发货
ONSEMI/安森美
25+
DO-201AD
28510
ONSEMI/安森美全新特价MBR3100RLG即刻询购立享优惠#长期有货
ON/安森美
25+
DO-201AD
26000
全新原装现货特价销售,欢迎来电查询
ON
21+
DO-201AD
850000
全新原装鄙视假货
ON
24+
DO201AD
3000
BCD/DIODES
2019+PB
DO-214AC
88700
原装正品 可含税交易
ON(安森美)
2511
插件,4.8x7.3mm
4525
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
ON
16+/17+
DO201AD
78000
渠道现货库存-原装正品
ON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
ON/安森美
2023+
Axial
15000
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