This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low−voltage,

high−frequency inverters, free wheeling diodes, and polarity

protection diodes.

Features

 Low Reverse Current

 Low Stored Charge, Majority Carrier Conduction

 Low Power Loss/High Efficiency

 Highly Stable Oxide Passivated Junction

 Guard−ring for Stress Protection

 Low Forward Voltage

 175C Operating Junction Temperature

 High Surge Capacity

 Pb−Free Packages are Available*

Mechanical Characteristics:

 Case: Epoxy, Molded

 Weight: 1.1 Gram (Approximately)

 Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

 Lead Temperature for Soldering Purposes:

260C Max. for 10 Seconds

 Polarity: Cathode indicated by Polarity Band