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MBR30H100CT价格
参考价格：￥5.9958
型号：MBR30H100CT-E3/45 品牌：Vishay 备注：这里有MBR30H100CT多少钱，2025年最近7天走势，今日出价，今日竞价，MBR30H100CT批发/采购报价，MBR30H100CT行情走势销售排行榜，MBR30H100CT报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR30H100CT | High-Voltage Dual Schottky Rectifiers Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabil | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
MBR30H100CT | SWITCHMODE Power Rectifier 100 V, 30 A Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management | ONSEMI 安森美半导体 | | |
MBR30H100CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | |
MBR30H100CT | Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR30H100CT | Dual Common Cathode Schottky Rectifier 文件：213 Kbytes Page：4 Pages | TSC 台湾半导体 | | |
MBR30H100CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 文件：1.25895 Mbytes Page：3 Pages | KERSEMI | | |
MBR30H100CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 文件：1.60747 Mbytes Page：3 Pages | KERSEMI | | |
MBR30H100CT | Power Schottky Rectifier 文件：219.51 Kbytes Page：4 Pages | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | | |
MBR30H100CT | 封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | |
MBR30H100CT | 封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBR30H100CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 文件：1.24795 Mbytes Page：3 Pages | KERSEMI | | |
MBR30H100CT | Schottky Barrier Rectifier 文件：244.63 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MBR30H100CT | 30.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：228.14 Kbytes Page：3 Pages | TSC 台湾半导体 | | |
MBR30H100CT | Dual Common Cathode High Voltage Schottky Rectifier 文件：725.98 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR30H100CT | Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
MBR30H100CT | Power Schottky Rectifier - 30Amp 100Volt 文件：146.37 Kbytes Page：3 Pages | SIRECT 矽莱克半导体 | | |
MBR30H100CT | SWITCHMODE??Power Rectifier 文件：128.82 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MBR30H100CT | 30.0AMPS. Schottky Barrier Rectifiers 文件：128.16 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR30H100CT | Dual Common-Cathode High-Voltage Schottky Rectifier 文件：130.199 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Switch-mode Power Rectifier 100 V, 30 A Features and Benefits Low Forward Voltage: 0.67 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices Applications Power Supply − Output Rectification Power Management | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 30 A Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management | ONSEMI 安森美半导体 | | ||
Switch?릑ode Power Rectifier Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management | ONSEMI 安森美半导体 | | ||
Switch-mode Power Rectifier 100 V, 30 A Features and Benefits Low Forward Voltage: 0.67 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices Applications Power Supply − Output Rectification Power Management | ONSEMI 安森美半导体 | | ||
SWITCHMODE??Power Rectifier 文件：128.82 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
30.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：228.14 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：213 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：213 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：213 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.50024 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.86112 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：169.25 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：169.25 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.50024 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.50024 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
SWITCHMODE??Power Rectifier 文件：128.82 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.50024 Mbytes Page：10 Pages | KERSEMI | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：169.25 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：169.25 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode 文件：385.31 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
100 V field-effect rectifier diode 文件：474.3 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | ||
100 V field-effect rectifier diode 文件：474.3 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | ||
100 V field-effect rectifier diode 文件：474.3 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | ||
100 V field-effect rectifier diode 文件：474.3 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | |
MBR30H100CT产品属性
- 类型
描述
- 型号
MBR30H100CT
- 功能描述
肖特基二极管与整流器 30A 100V H-Series
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BCD |
24+ |
TO220 |
46220 |
只做全新原装进口现货 |
|||
ON/安森美 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
|||
DIODES/美台 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
TSC |
2025+ |
TO-220 |
3550 |
全新原厂原装产品、公司现货销售 |
|||
24+ |
3000 |
公司现货 |
|||||
ONSEMI/安森美 |
24+ |
TO220 |
21574 |
郑重承诺只做原装进口现货 |
|||
ON |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
ON |
25+23+ |
TO-220 |
14861 |
绝对原装正品全新进口深圳现货 |
|||
TSC |
2016+ |
TO-220 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
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