MBR30H100CT价格

参考价格:¥5.9958

型号:MBR30H100CT-E3/45 品牌:Vishay 备注:这里有MBR30H100CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR30H100CT批发/采购报价,MBR30H100CT行情走势销售排行榜,MBR30H100CT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR30H100CT

High-Voltage Dual Schottky Rectifiers

Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabil

VishayVishay Siliconix

威世威世科技公司

MBR30H100CT

SWITCHMODE Power Rectifier 100 V, 30 A

Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management

ONSEMI

安森美半导体

MBR30H100CT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

MBR30H100CT

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世威世科技公司

MBR30H100CT

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MBR30H100CT

Dual Common Cathode Schottky Rectifier

文件:213 Kbytes Page:4 Pages

TSC

台湾半导体

MBR30H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

文件:1.25895 Mbytes Page:3 Pages

KERSEMI

MBR30H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

文件:1.60747 Mbytes Page:3 Pages

KERSEMI

MBR30H100CT

Power Schottky Rectifier

文件:219.51 Kbytes Page:4 Pages

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

MBR30H100CT

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

MBR30H100CT

30A, 100V, Schottky Rectifier

TSC

台湾半导体

MBR30H100CT

Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

VishayVishay Siliconix

威世威世科技公司

MBR30H100CT

肖特基势垒整流器,H 串联,100 V,30 A

ONSEMI

安森美半导体

MBR30H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

文件:1.24795 Mbytes Page:3 Pages

KERSEMI

MBR30H100CT

Schottky Barrier Rectifier

文件:244.63 Kbytes Page:2 Pages

ISC

无锡固电

MBR30H100CT

30.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

文件:228.14 Kbytes Page:3 Pages

TSC

台湾半导体

MBR30H100CT

Dual Common Cathode High Voltage Schottky Rectifier

文件:725.98 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

MBR30H100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:159.32 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

MBR30H100CT

Power Schottky Rectifier - 30Amp 100Volt

文件:146.37 Kbytes Page:3 Pages

SIRECT

矽莱克半导体

MBR30H100CT

SWITCHMODE??Power Rectifier

文件:128.82 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MBR30H100CT

30.0AMPS. Schottky Barrier Rectifiers

文件:128.16 Kbytes Page:2 Pages

TSC

台湾半导体

MBR30H100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:130.199 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世威世科技公司

Switch-mode Power Rectifier 100 V, 30 A

Features and Benefits  Low Forward Voltage: 0.67 V @ 125C  Low Power Loss/High Efficiency  High Surge Capacity  175C Operating Junction Temperature  30 A Total (15 A Per Diode Leg)  These are Pb−Free Devices Applications  Power Supply − Output Rectification  Power Management 

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier 100 V, 30 A

Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management

ONSEMI

安森美半导体

Switch?릑ode Power Rectifier

Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management

ONSEMI

安森美半导体

Switch-mode Power Rectifier 100 V, 30 A

Features and Benefits  Low Forward Voltage: 0.67 V @ 125C  Low Power Loss/High Efficiency  High Surge Capacity  175C Operating Junction Temperature  30 A Total (15 A Per Diode Leg)  These are Pb−Free Devices Applications  Power Supply − Output Rectification  Power Management 

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifier

文件:128.82 Kbytes Page:8 Pages

ONSEMI

安森美半导体

30.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

文件:228.14 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:213 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:213 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:213 Kbytes Page:4 Pages

TSC

台湾半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:476.74 Kbytes Page:8 Pages

DIODES

美台半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.86112 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:939.89 Kbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.50024 Mbytes Page:10 Pages

KERSEMI

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:169.25 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:159.32 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:169.25 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:159.32 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.50024 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:939.89 Kbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:476.74 Kbytes Page:8 Pages

DIODES

美台半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.50024 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:939.89 Kbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:476.74 Kbytes Page:8 Pages

DIODES

美台半导体

SWITCHMODE??Power Rectifier

文件:128.82 Kbytes Page:8 Pages

ONSEMI

安森美半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:939.89 Kbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:476.74 Kbytes Page:8 Pages

DIODES

美台半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.50024 Mbytes Page:10 Pages

KERSEMI

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:169.25 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:159.32 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:169.25 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:159.32 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

100 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation  ECOPACK®2 compliant component

STMICROELECTRONICS

意法半导体

100 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation  ECOPACK®2 compliant component

STMICROELECTRONICS

意法半导体

30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode

文件:385.31 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

100 V field-effect rectifier diode

文件:474.3 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

100 V field-effect rectifier diode

文件:474.3 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

MBR30H100CT产品属性

  • 类型

    描述

  • 型号

    MBR30H100CT

  • 功能描述

    肖特基二极管与整流器 30A 100V H-Series

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-11-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
DIODES/美台
25+
TO-220
54648
百分百原装现货 实单必成
VISHAY/威世
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
TAIWANSEMICONDUCTOR
25+
TO220
20300
TAIWANSEMICONDUCTOR原装特价MBR30H100CT即刻询购立享优惠#长期有货
ON
16+
TO-220
390
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON
23+
NA
10658
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
ON SEMI
25+
79
公司优势库存 热卖中!

MBR30H100CT数据表相关新闻