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MBR30H100C价格
参考价格：￥5.9958
型号：MBR30H100CT-E3/45 品牌：Vishay 备注：这里有MBR30H100C多少钱，2025年最近7天走势，今日出价，今日竞价，MBR30H100C批发/采购报价，MBR30H100C行情走势销售排行榜，MBR30H100C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR30H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：990.14 Kbytes Page：11 Pages | BCDSEMI 新进半导体 |   | |
MBR30H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | |
MBR30H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.86112 Mbytes Page：10 Pages | KERSEMI | | |
MBR30H100C | SCHOTTKY BARRIER RECTIFIER 文件：333.01 Kbytes Page：5 Pages | RECTRON 丽正国际 | | |
MBR30H100C | Schottky Diodes | RECTRON 丽正国际 | | |
MBR30H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | DIODES 美台半导体 | | |
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
High-Voltage Dual Schottky Rectifiers Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabil | VishayVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Power Rectifier 100 V, 30 A Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management | ONSEMI 安森美半导体 | | ||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
Switch-mode Power Rectifier 100 V, 30 A Features and Benefits Low Forward Voltage: 0.67 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices Applications Power Supply − Output Rectification Power Management | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 30 A Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management | ONSEMI 安森美半导体 | | ||
Switch?릑ode Power Rectifier Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • Pb−Free Package is Available Applications • Power Supply − Output Rectification • Power Management | ONSEMI 安森美半导体 | | ||
Switch-mode Power Rectifier 100 V, 30 A Features and Benefits Low Forward Voltage: 0.67 V @ 125C Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices Applications Power Supply − Output Rectification Power Management | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
萧特基 (Schottky)(.5A 和以上) | DIODES 美台半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 文件：1.25895 Mbytes Page：3 Pages | KERSEMI | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 文件：1.60747 Mbytes Page：3 Pages | KERSEMI | | ||
Power Schottky Rectifier 文件：219.51 Kbytes Page：4 Pages | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | | ||
Dual Common Cathode Schottky Rectifier 文件：213 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Schottky Barrier Rectifier 文件：244.63 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
30.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：228.14 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode High Voltage Schottky Rectifier 文件：725.98 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 文件：1.24795 Mbytes Page：3 Pages | KERSEMI | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power Schottky Rectifier - 30Amp 100Volt 文件：146.37 Kbytes Page：3 Pages | SIRECT 矽莱克半导体 | | ||
SWITCHMODE??Power Rectifier 文件：128.82 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
30.0AMPS. Schottky Barrier Rectifiers 文件：128.16 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：130.199 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE??Power Rectifier 文件：128.82 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
30.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件：228.14 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：213 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：213 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：213 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.50024 Mbytes Page：10 Pages | KERSEMI | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.86112 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：169.25 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：169.25 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.50024 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.50024 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
SWITCHMODE??Power Rectifier 文件：128.82 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：939.89 Kbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.50024 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：476.74 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：169.25 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：169.25 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：159.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
100 V field-effect rectifier diode Features ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation ECOPACK®2 compliant component | STMICROELECTRONICS 意法半导体 | |
MBR30H100C产品属性
- 类型
描述
- 型号
MBR30H100C
- 制造商
BCDSEMI
- 制造商全称
BCD Semiconductor Manufacturing Limited
- 功能描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
DIODES/美台 |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 |
|||
VISHAY/威世 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
TAIWANSEMICONDUCTOR |
25+ |
TO220 |
20300 |
TAIWANSEMICONDUCTOR原装特价MBR30H100CT即刻询购立享优惠#长期有货 |
|||
ON |
16+ |
TO-220 |
390 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
23+ |
NA |
10658 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
ON SEMI |
25+ |
79 |
公司优势库存 热卖中! |
MBR30H100C规格书下载地址
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