2.0A 30V Schottky diode

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2.0A SCHOTTKY BARRIER DIODE

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Schottky 

SCHOTTKY BARRIER DIODE

Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection Designed for Surface Mount Application Plastic Material —UL Recognition Flammability Classification 94V-O Green Products in Compliance with the ROHS Directive This is a Pb − Free Device All SMC

SCHOTTKY BARRIER DIODE

Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection Designed for Surface Mount Application Plastic Material —UL Recognition Flammability Classification 94V-O Green Products in Compliance with the ROHS Directive Terminals finish: 100 Pure Tin Thi

SCHOTTKY DIODE REVERSE VOLTAGE 30V FORWARD CURRENT 2.0A

DESCRIPTION The MBR230LSF is available in SOD-123FL Package FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverters, free

Surface Mount Schottky Power Rectifier Plastic SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system

Surface Mount Schottky Power Rectifier Plastic SOD-123 Package

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system

SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

Surface Monut Schottky Barrier Rectifier

Features Low power loss, high efficiency © High surge current capability

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Low Forward Voltage (VF) Minimizes Conduction Losses and Improving Efficiency Guard Ring Die Construction for Transient Protection Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Low Forward Voltage (VF) Minimizes Conduction Losses and Improving Efficiency Guard Ring Die Construction for Transient Protection Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

SCHOTTKY RECTIFIER

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SURFACE MOUNT SCHOTTKY BARRIER DIODE

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封装/外壳：SOD-123 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 2A SOD123 分立半导体产品 二极管 - 整流器 - 单

SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 30 VOLTS

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SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 30 VOLTS

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Surface Mount Schottky Power Rectifier

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Compact Intelligent Power Module (IPM) Motor Control Development Kit (MDK) 1 kW

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封装/外壳：SOD-123F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 2A SOD123L 分立半导体产品 二极管 - 整流器 - 单

DIODE SCHOTTKY

萧特基 (Schottky)(.5A 和以上)

2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

1/4 FLAT PLUG PHONE PLUGS

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Modular Radio Telemetry System

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MINIATURE FUSES - 5x20 mm

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5x20 mm MINIATURE FUSES

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