SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

Modular Radio Telemetry System

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1/4 FLAT PLUG PHONE PLUGS

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MINIATURE FUSES - 5x20 mm

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5x20 mm MINIATURE FUSES

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