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MBR20H100C价格
参考价格：￥4.7443
型号：MBR20H100CT-E3/45 品牌：Vishay 备注：这里有MBR20H100C多少钱，2025年最近7天走势，今日出价，今日竞价，MBR20H100C批发/采购报价，MBR20H100C行情走势销售排行榜，MBR20H100C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR20H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.11511 Mbytes Page：11 Pages | BCDSEMI 新进半导体 |   | |
MBR20H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | |
MBR20H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59248 Mbytes Page：10 Pages | KERSEMI | | |
MBR20H100C | SCHOTTKY BARRIER RECTIFIER 文件：329.67 Kbytes Page：5 Pages | RECTRON 丽正国际 | | |
MBR20H100C | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER | DIODES 美台半导体 | | |
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | KERSEMI | | ||
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | KERSEMI | | ||
SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | ||
Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Power Rectifier 100 V, 20 A SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | ONSEMI 安森美半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
Switch-mode Power Rectifier SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier 100 V, 20 A SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | ONSEMI 安森美半导体 | | ||
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | KERSEMI | | ||
High Barrier Technology for Improved High Temperature Performance SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | KERSEMI | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection 文件：223.32 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
20.0AMP. Schottky Barrier Rectifiers 文件：126.9 Kbytes Page：2 Pages | LUGUANG 鲁光电子 | | ||
Dual Common Cathode High Voltage Schottky Rectifier 文件：707.16 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：523.47 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
Dual High-Voltage Schottky Rectifiers 文件：159.96 Kbytes Page：3 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：578.41 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0AMPS. Schottky Barrier Rectifiers 文件：194.79 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：444.09 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | ||
肖特基势垒整流器，H 系列，100 V，20 A | ONSEMI 安森美半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Schottky Barrier Diode in a TO-220 Plastic Package 文件：1.39795 Mbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：171.99 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power Schottky Rectifier 文件：255.96 Kbytes Page：4 Pages | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT） 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performence | VishayVishay Siliconix 威世威世科技公司 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：523.47 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：578.41 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0AMPS. Schottky Barrier Rectifiers 文件：194.79 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection 文件：223.32 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59248 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59577 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：412.12 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | |
MBR20H100C产品属性
- 类型
描述
- 型号
MBR20H100C
- 制造商
BCDSEMI
- 制造商全称
BCD Semiconductor Manufacturing Limited
- 功能描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
TO2203 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
VISHAY/威世 |
24+ |
NA/ |
84 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
TO-220 |
50000 |
|||||
ON |
24+ |
TO220-3 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
DIODES/美台 |
25+ |
TO220F |
32360 |
DIODES/美台全新特价MBR20H100CTF-G1即刻询购立享优惠#长期有货 |
|||
VISHAY |
14+ |
TO220 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
2025+ |
TO-220AB |
4755 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
24+ |
30000 |
大批量供应优势库存热卖 |
||||
DIODES/美台 |
2023+ |
TO-220 |
17000 |
一级代理优势现货,全新正品直营店 |
MBR20H100C规格书下载地址
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