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MBR20H100CT价格
参考价格：￥4.7443
型号：MBR20H100CT-E3/45 品牌：Vishay 备注：这里有MBR20H100CT多少钱，2026年最近7天走势，今日出价，今日竞价，MBR20H100CT批发/采购报价，MBR20H100CT行情走势销售排行榜，MBR20H100CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR20H100CT | Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 |   | |
MBR20H100CT | SWITCHMODE Power Rectifier 100 V, 20 A SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | ONSEMI 安森美半导体 | | |
MBR20H100CT | Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | |
MBR20H100CT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | | |
MBR20H100CT | SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | KERSEMI | | |
MBR20H100CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | KERSEMI | | |
MBR20H100CT | Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | |
MBR20H100CT | Schottky Barrier Diode in a TO-220 Plastic Package 文件：1.39795 Mbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
MBR20H100CT | Dual Common-Cathode High-Voltage Schottky Rectifier 文件：171.99 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
MBR20H100CT | Power Schottky Rectifier 文件：255.96 Kbytes Page：4 Pages | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | | |
MBR20H100CT | 封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | |
MBR20H100CT | 封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | TSC 台湾半导体 | | |
MBR20H100CT | 肖特基势垒整流器，H 系列，100 V，20 A | ONSEMI 安森美半导体 | | |
MBR20H100CT | 萧特基 (Schottky)(.5A 和以上) | DIODES 美台半导体 | | |
MBR20H100CT | 20.0AMPS. Schottky Barrier Rectifiers 文件：194.79 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR20H100CT | 20.0 AMPS. Schottky Barrier Rectifiers 文件：444.09 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR20H100CT | 20.0 AMPS. Schottky Barrier Rectifiers 文件：578.41 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR20H100CT | 20.0 AMPS. Schottky Barrier Rectifiers 文件：523.47 Kbytes Page：2 Pages | TSC 台湾半导体 | | |
MBR20H100CT | Dual High-Voltage Schottky Rectifiers 文件：159.96 Kbytes Page：3 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
MBR20H100CT | 20.0AMP. Schottky Barrier Rectifiers 文件：126.9 Kbytes Page：2 Pages | LUGUANG 鲁光电子 | | |
MBR20H100CT | Dual Common Cathode High Voltage Schottky Rectifier 文件：707.16 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
MBR20H100CT | Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | |
MBR20H100CT | 20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection 文件：223.32 Kbytes Page：3 Pages | TSC 台湾半导体 | | |
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
Switch-mode Power Rectifier SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | ONSEMI 安森美半导体 | | ||
High Barrier Technology for Improved High Temperature Performance SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | KERSEMI | | ||
SWITCHMODE Power Rectifier 100 V, 20 A SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | ONSEMI 安森美半导体 | | ||
SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | KERSEMI | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c | VishayVishay Siliconix 威世威世科技公司 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：523.47 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0 AMPS. Schottky Barrier Rectifiers 文件：578.41 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0AMPS. Schottky Barrier Rectifiers 文件：194.79 Kbytes Page：2 Pages | TSC 台湾半导体 | | ||
20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection 文件：223.32 Kbytes Page：3 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59248 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59577 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved Temperature Performance | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode High-Voltage Schottky Rectifier 文件：412.12 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMI 新进半导体 | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI | | ||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
Dual Common Cathode Schottky Rectifier 文件：205.93 Kbytes Page：4 Pages | TSC 台湾半导体 | | ||
Quartz Crystals FEATURES • Ultra-miniature size: 3.2 x 2.5 x 0.8 (mm) • Wide frequency range • Seam sealing • Emboss taping • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
Switch-mode Power Rectifier SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | ONSEMI 安森美半导体 | | ||
Switch-mode Power Rectifier SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free | ONSEMI 安森美半导体 | | ||
20A Trench Schottky Rectifier 文件：470.42 Kbytes Page：3 Pages | CITC 竹懋科技 | |
MBR20H100CT产品属性
- 类型
描述
- 型号
MBR20H100CT
- 功能描述
肖特基二极管与整流器 20 Amp 100 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
TO-220-3 |
5689 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
BCD |
2025+ |
TO-220 |
5000 |
原装进口价格优 请找坤融电子! |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
2015+ |
TO-2203 |
12500 |
全新原装,现货库存长期供应 |
|||
DIODES/美台 |
20+ |
TO-220 |
50000 |
现货很近!原厂很远!只做原装 |
|||
TSC |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
中性 |
23+ |
TO220-3 |
50000 |
全新原装正品现货,支持订货 |
|||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ON Semiconductor |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
ON |
0832+ |
TO-220 |
2100 |
全新原装绝对优势现货特价! |
MBR20H100CT规格书下载地址
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MBR20H100CT数据表相关新闻
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