MBR20H100CT价格

参考价格:¥4.7443

型号:MBR20H100CT-E3/45 品牌:Vishay 备注:这里有MBR20H100CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR20H100CT批发/采购报价,MBR20H100CT行情走势销售排行榜,MBR20H100CT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR20H100CT

Dual High-Voltage Schottky Rectifiers

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c

VishayVishay Siliconix

威世威世科技公司

MBR20H100CT

SWITCHMODE Power Rectifier 100 V, 20 A

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

ONSEMI

安森美半导体

MBR20H100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c

VishayVishay Siliconix

威世威世科技公司

MBR20H100CT

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

MBR20H100CT

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

KERSEMI

MBR20H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

KERSEMI

MBR20H100CT

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世威世科技公司

MBR20H100CT

Schottky Barrier Diode in a TO-220 Plastic Package

文件:1.39795 Mbytes Page:6 Pages

FOSHAN

蓝箭电子

MBR20H100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:171.99 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

MBR20H100CT

Power Schottky Rectifier

文件:255.96 Kbytes Page:4 Pages

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

MBR20H100CT

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MBR20H100CT

封装/外壳:TO-220-3 包装:卷带(TR) 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

MBR20H100CT

肖特基势垒整流器,H 系列,100 V,20 A

ONSEMI

安森美半导体

MBR20H100CT

萧特基 (Schottky)(.5A 和以上)

DIODES

美台半导体

MBR20H100CT

20.0AMPS. Schottky Barrier Rectifiers

文件:194.79 Kbytes Page:2 Pages

TSC

台湾半导体

MBR20H100CT

20.0 AMPS. Schottky Barrier Rectifiers

文件:444.09 Kbytes Page:2 Pages

TSC

台湾半导体

MBR20H100CT

20.0 AMPS. Schottky Barrier Rectifiers

文件:578.41 Kbytes Page:2 Pages

TSC

台湾半导体

MBR20H100CT

20.0 AMPS. Schottky Barrier Rectifiers

文件:523.47 Kbytes Page:2 Pages

TSC

台湾半导体

MBR20H100CT

Dual High-Voltage Schottky Rectifiers

文件:159.96 Kbytes Page:3 Pages

VishayVishay Siliconix

威世威世科技公司

MBR20H100CT

20.0AMP. Schottky Barrier Rectifiers

文件:126.9 Kbytes Page:2 Pages

LUGUANG

鲁光电子

MBR20H100CT

Dual Common Cathode High Voltage Schottky Rectifier

文件:707.16 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

MBR20H100CT

Dual Common Cathode Schottky Rectifier

文件:205.93 Kbytes Page:4 Pages

TSC

台湾半导体

MBR20H100CT

20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection

文件:223.32 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c

VishayVishay Siliconix

威世威世科技公司

Switch-mode Power Rectifier

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

ONSEMI

安森美半导体

High Barrier Technology for Improved High Temperature Performance

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

KERSEMI

SWITCHMODE Power Rectifier 100 V, 20 A

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

KERSEMI

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge c

VishayVishay Siliconix

威世威世科技公司

20.0 AMPS. Schottky Barrier Rectifiers

文件:523.47 Kbytes Page:2 Pages

TSC

台湾半导体

20.0 AMPS. Schottky Barrier Rectifiers

文件:578.41 Kbytes Page:2 Pages

TSC

台湾半导体

20.0AMPS. Schottky Barrier Rectifiers

文件:194.79 Kbytes Page:2 Pages

TSC

台湾半导体

20.0AMPS. Schottky Barrier Rectifiers Guard-ring for overvoltage protection

文件:223.32 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:205.93 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:205.93 Kbytes Page:4 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:205.93 Kbytes Page:4 Pages

TSC

台湾半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.59419 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:1.036569 Mbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:523.51 Kbytes Page:8 Pages

DIODES

美台半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.59248 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:1.036569 Mbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.59419 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:523.51 Kbytes Page:8 Pages

DIODES

美台半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.59577 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:523.51 Kbytes Page:8 Pages

DIODES

美台半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.59419 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:1.036569 Mbytes Page:11 Pages

BCDSEMI

新进半导体

Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved Temperature Performance

VishayVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

文件:412.12 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:1.036569 Mbytes Page:11 Pages

BCDSEMI

新进半导体

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:4.59419 Mbytes Page:10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件:523.51 Kbytes Page:8 Pages

DIODES

美台半导体

Dual Common Cathode Schottky Rectifier

文件:205.93 Kbytes Page:4 Pages

TSC

台湾半导体

Quartz Crystals

FEATURES • Ultra-miniature size: 3.2 x 2.5 x 0.8 (mm) • Wide frequency range • Seam sealing • Emboss taping • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世威世科技公司

Switch-mode Power Rectifier

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

ONSEMI

安森美半导体

Switch-mode Power Rectifier

SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits • Low Forward Voltage: 0.64 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 20 A Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free

ONSEMI

安森美半导体

20A Trench Schottky Rectifier

文件:470.42 Kbytes Page:3 Pages

CITC

竹懋科技

MBR20H100CT产品属性

  • 类型

    描述

  • 型号

    MBR20H100CT

  • 功能描述

    肖特基二极管与整流器 20 Amp 100 Volt Dual

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-12-31 18:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
25+
TO220F
32360
DIODES/美台全新特价MBR20H100CTF-G1即刻询购立享优惠#长期有货
30
220
ON/安森美
10
92
ON Semiconductor
22+
TO220AB
9000
原厂渠道,现货配单
ON/安森美
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
24+
NA/
10
优势代理渠道,原装正品,可全系列订货开增值税票
22+
TO220-3
20000
只做原装
BCD
25+23+
TO-220
27966
绝对原装正品全新进口深圳现货
ON
23+
TO-220AB
65400
onsemi
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ST/ON/IR
22+
TO-220
12950
原装正品,实单请联系

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