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MBR20H100CT价格
参考价格：￥4.7443
型号：MBR20H100CT-E3/45 品牌：Vishay 备注：这里有MBR20H100CT多少钱，2024年最近7天走势，今日出价，今日竞价，MBR20H100CT批发/采购报价，MBR20H100CT行情走势销售排行榜，MBR20H100CT报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR20H100CT | DualHigh-VoltageSchottkyRectifiers DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgec | VishayVishay Siliconix 威世科技 |  |   |
MBR20H100CT | SWITCHMODEPowerRectifier100V,20A SWITCHMODE™PowerRectifier100V,20A FeaturesandBenefits •LowForwardVoltage:0.64V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •Pb−Free | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MBR20H100CT | DualCommon-CathodeHigh-VoltageSchottkyRectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgec | VishayVishay Siliconix 威世科技 | | |
MBR20H100CT | SCHOTTKYBARRIERRECTIFIERS Feaures Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std (Halogen Free) Lowstoredchargemajoritycarrierconduction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | |
MBR20H100CT | SCHOTTKYBARRIERRECTIFIER20AMPERES,100VOLTS SWITCHMODE™PowerRectifier100V,20A FeaturesandBenefits •LowForwardVoltage:0.64V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •Pb−Free | KERSEMI Kersemi Electronic Co., Ltd. |  | |
MBR20H100CT | PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 SWITCHMODE™PowerRectifier100V,20A FeaturesandBenefits •LowForwardVoltage:0.64V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •Pb−Free | KERSEMI Kersemi Electronic Co., Ltd. | | |
MBR20H100CT | DualCommonCathodeHighVoltageSchottkyRectifier FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage) | VishayVishay Siliconix 威世科技 | | |
MBR20H100CT | 封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MBR20H100CT | 封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation |  | |
MBR20H100CT | DualCommon-CathodeHigh-VoltageSchottkyRectifier 文件：171.99 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | |
MBR20H100CT | PowerSchottkyRectifier 文件：255.96 Kbytes Page：4 Pages | SISEMICShenzhen SI Semiconductors Co.,LTD. 赛恩半导体深圳市赛恩半导体有限公司 |  | |
MBR20H100CT | SchottkyBarrierDiodeinaTO-220PlasticPackage 文件：1.39795 Mbytes Page：6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | |
MBR20H100CT | DualCommonCathodeSchottkyRectifier 文件：205.93 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | |
MBR20H100CT | 20.0AMPS.SchottkyBarrierRectifiers 文件：194.79 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
MBR20H100CT | 20.0AMPS.SchottkyBarrierRectifiers 文件：444.09 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
MBR20H100CT | 20.0AMPS.SchottkyBarrierRectifiers 文件：578.41 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
MBR20H100CT | 20.0AMPS.SchottkyBarrierRectifiers 文件：523.47 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
MBR20H100CT | DualHigh-VoltageSchottkyRectifiers 文件：159.96 Kbytes Page：3 Pages | VishayVishay Siliconix 威世科技 | | |
MBR20H100CT | 20.0AMP.SchottkyBarrierRectifiers 文件：126.9 Kbytes Page：2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
MBR20H100CT | DualCommonCathodeHighVoltageSchottkyRectifier 文件：707.16 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | |
MBR20H100CT | 20.0AMPS.SchottkyBarrierRectifiersGuard-ringforovervoltageprotection 文件：223.32 Kbytes Page：3 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
DualCommonCathodeHighVoltageSchottkyRectifier FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage) | VishayVishay Siliconix 威世科技 | | | |
DualCommon-CathodeHigh-VoltageSchottkyRectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgec | VishayVishay Siliconix 威世科技 | | | |
SWITCHMODEPowerRectifier100V,20A SWITCHMODE™PowerRectifier100V,20A FeaturesandBenefits •LowForwardVoltage:0.64V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •Pb−Free | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SCHOTTKYBARRIERRECTIFIER20AMPERES,100VOLTS SWITCHMODE™PowerRectifier100V,20A FeaturesandBenefits •LowForwardVoltage:0.64V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •Pb−Free | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HighBarrierTechnologyforImprovedHighTemperaturePerformance SWITCHMODE™PowerRectifier100V,20A FeaturesandBenefits •LowForwardVoltage:0.64V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •Pb−Free | KERSEMI Kersemi Electronic Co., Ltd. | | | |
Switch-modePowerRectifier SWITCHMODE™PowerRectifier100V,20A FeaturesandBenefits •LowForwardVoltage:0.64V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •Pb−Free | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DualCommon-CathodeHigh-VoltageSchottkyRectifier DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgec | VishayVishay Siliconix 威世科技 | | | |
20.0AMPS.SchottkyBarrierRectifiers 文件：523.47 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
20.0AMPS.SchottkyBarrierRectifiers 文件：578.41 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
20.0AMPS.SchottkyBarrierRectifiers 文件：194.79 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
20.0AMPS.SchottkyBarrierRectifiersGuard-ringforovervoltageprotection 文件：223.32 Kbytes Page：3 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
DualCommonCathodeSchottkyRectifier 文件：205.93 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
DualCommonCathodeSchottkyRectifier 文件：205.93 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
DualCommonCathodeSchottkyRectifier 文件：205.93 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 |  | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODESDiodes Incorporated 达尔科技 |  | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：4.59248 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：4.59577 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
DualCommon-CathodeHigh-VoltageSchottkyRectifier 文件：412.12 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：1.036569 Mbytes Page：11 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：4.59419 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HIGHVOLTAGEPOWERSCHOTTKYRECTIFIER 文件：523.51 Kbytes Page：8 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
DualCommonCathodeSchottkyRectifier 文件：205.93 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
QuartzCrystals FEATURES •Ultra-miniaturesize:3.2x2.5x0.8(mm) •Widefrequencyrange •Seamsealing •Embosstaping •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
Switch-modePowerRectifier SWITCHMODE™PowerRectifier100V,20A FeaturesandBenefits •LowForwardVoltage:0.64V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •20ATotal(10APerDiodeLeg) •Guard−RingforStressProtection •Pb−Free | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
20ATrenchSchottkyRectifier 文件：470.42 Kbytes Page：3 Pages | | | ||
100Vfield-effectrectifierdiode 文件：545.32 Kbytes Page：15 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
100Vfield-effectrectifierdiode 文件：545.32 Kbytes Page：15 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
MBR20H100CT产品属性
- 类型
描述
- 型号
MBR20H100CT
- 功能描述
肖特基二极管与整流器 20 Amp 100 Volt Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2020+ |
TO220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIODES/美台 |
21+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
VISHAY |
14+ |
TO220 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
2021/2022+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Vishay General Semiconductor - |
23+ |
TO-220-3 |
30000 |
二极管-分立半导体产品-原装正品 |
|||
ON |
23+ |
TO220-3 |
20000 |
原厂原装正品现货 |
|||
ON |
20+ |
TO-220 |
65300 |
一级代理/放心购买! |
|||
BCD |
24+ |
TO220F |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
VISHAY/威世 |
22+ |
TO220 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
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