Metal silicon junction, majority carrier conduction

Features: • UL Recognized File # E-326243 • Plastic material used carriers Underwriters Laboratory Classification 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, low forward voltage drop • High surge capabil

Schottky Barrier Rectifiers

Productor Character Multilayer Metal -Silicon Potential Structure. Low Leakage Current. High Current Capability, High Efficiency. High Junction Temperature Capability. RoHs Product.

SCHOTTKY BARRIER RECTIFIERS

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Schottky Barrier Rectifiers

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Dual Common Cathode Schottky Rectifier

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封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 200V TO247 分立半导体产品 二极管 - 整流器 - 阵列

肖特基整流管

Schottky Barrier Rectifiers

封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 200V TO247 分立半导体产品 二极管 - 整流器 - 阵列

SWITCHMODE Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low–voltage, high–frequency s

Fast Recovery Rectifier

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20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

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Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor

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Noninductive Planar Low Cost, 20 Watt TO 220 Package Thick Film Resistor

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