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MBR2010价格
参考价格:¥1.1442
型号:MBR20100CT 品牌:MULTICOMP 备注:这里有MBR2010多少钱,2025年最近7天走势,今日出价,今日竞价,MBR2010批发/采购报价,MBR2010行情走势销售排行榜,MBR2010报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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20 Amp Schottky Barrier Rectifier 20 to 100 Volts 20 Amp Schottky Barrier Rectifier 20 to 200 Volts Features • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix d | MCC 美微科 | |||
20 Amp HT Power Schottky Barrier Rectifier [LTO-DMS] Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIER FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop High surg | GXELECTRONICS 星合电子 | |||
SCHOTTKY BARRIER RECTIFIER DIODES Features ● The plastic package carries Underwriters Laboratory ● Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: ● 250 °C,0.25”(6.35mm) from | SUNMATE 森美特 | |||
Schottky Rectifier ■ Features ● Io 20A ● VRRM 100V-200V ● High surge current capability ● Cases: Molded plastic ■ Applications ● Rectifier | YANGJIE 扬州扬杰电子 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDA 辰达半导体 | |||
MBR20100 SCHOTTKY RECTIFIER Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY RECTIFIER 20 Amp Description/ Features This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheel | IRF | |||
SCHOTTKY BARRIER RECTIFIER FEATURES * 20 Amps Total (10 Amps Per Diode Leg) * Guard Ring for Transient Protection * Low Forward Voltage Drop * High Surge Capability * Low Power Loss/High Efficiency | UTC 友顺 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features • | BCDSEMI 新进半导体 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
20.0 Ampere Dual Common Anode Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | THINKISEMI 思祁半导体 | |||
SCHOTTKY RECTIFIERS VOLTAGE 20~ 20 0Volts CURRENT 20 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capab | NIUHANG 纽航电子 | |||
40 to 200 Volts Forward Current - 20.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | CHENDA 辰达半导体 | |||
20 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability | RFERFE international RFE国际公司RFE国际股份有限公司 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
SMD Schottky Barrier Rectifiers Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla | COMCHIP 典琦 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
20.0 AMP SCHOTTKY BARRIER RECTIFIERS TO-220 PACKAGE FEATURES * Low switching noise * Low forward voltage drop * High current capability * High reliability * High surge capability * RoHS product for packing code suffix G Halogen free product for packing code suffix H * EPI WAFER | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | |||
SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
SMD Schottky Barrier Rectifiers Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla | COMCHIP 典琦 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES * 20 Amps Total (10 Amps Per Diode Leg) * Guard Ring for Transient Protection * Low Forward Voltage Drop * High Surge Capability * Low Power Loss/High Efficiency | UTC 友顺 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. Features ● Low Forw | DIODES 美台半导体 | |||
SCHOTT KY BARRIER RECTIFIERS Reverse Voltage - 100 V Forward Current - 20 A FEATURES ♦ Low forward voltage ♦ High current capability ♦ High forward surge capability ♦ Low power losses, High efficiency ♦ Guarding for over voltage protection ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Cas | YFWDIODE 佑风微电子 | |||
Dual Common Cathode High-Voltage Schottky Rectifier, DESCRIPTION The MBR20100CT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. FEATURES ● 150°C TJ operation ● High frequency operation ● Low forward voltage drop | NELLSEMI 尼尔半导体 | |||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | |||
SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 40 to 200 V Forward Current - 20 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any Mechanical data • Case: TO-220AB • pprox. Weight: | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
20A Schottky Barrier Rectifiers FEATURES • Metal of silicon rectifier,majority carrier conducton • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF • High surge capacity • Plastic package has UL flammability classification 94V-0 MECHANICAL DATA • Case :TO-220 mol | MORESEMI 摩矽半导体 | |||
SWITCHMODE POWER RECTIFIERS SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper | KERSEMI | |||
Schottky Barrier Rectifier FEATURES • Guard -Ring for Stress Protection • Low Forward Voltage • High Operating Junction Temperature • Guaranteed Reverse Avalanche • Low Power Loss/High Efficiency • High surge capability • Low Stored Charge Majority Carrier Conduction • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | |||
Trench MOS Schottky technology Features · Low Power Loss · High Efficiency · Low Forward Voltage , High Current Capability · High surge capacity · Case : ITO-220AB Full Molded Plastic Package | KERSEMI | |||
20.0AMP. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency | LUGUANG 鲁光电子 | |||
SWITCHMODE??Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • 20 Amps Total (10 Amps Per Diode Leg) • Guard−Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling | JIANGSU 长电科技 | |||
20 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • Meatl of Silicon Rectifier, Majority Conducton • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Low Power Loss | KERSEMI | |||
DUAL SCHOTTKY RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | |||
20A Schottky Barrier Rectifier FEATURE • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High ESD capability • High temperature soldering guaranteed: 260°C/10s/0.25(6.35mm) from case TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of | CHONGQING 重庆平伟实业 | |||
SCHOTTKY Diodes ■ Features ● High surge forward current capability ● Low Power loss, High efficiency ● Io 20.0A ● VRRM 90-200V ■ Applications ● High speed switching | YANGJIE 扬州扬杰电子 |
MBR2010产品属性
- 类型
描述
- 型号
MBR2010
- 功能描述
20 Amp HT Power Schottky Barrier Rectifier
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
37048 |
全新原装正品/价格优惠/质量保障 |
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Vishay(威世) |
24+ |
标准封装 |
7548 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
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DIODES/美台 |
25+ |
ITO-220S |
918000 |
明嘉莱只做原装正品现货 |
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台半 |
23+ |
TO-220 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
DIODES/美台 |
25+ |
TO-220 |
32000 |
DIODES/美台全新特价MBR20100CT-G1即刻询购立享优惠#长期有货 |
|||
ON |
21+ |
TO-220 |
8673 |
十年信誉,只做原装,有挂就有现货! |
|||
ON-SEMI |
24+ |
TO-220 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MCC/美微科 |
25+ |
TO-220AB |
10000 |
全新原装现货特价销售,欢迎来电查询 |
|||
DIODES/美台 |
09+12+13+ |
TO-220 |
265 |
深圳原装进口无铅现货 |
|||
DIODES |
23+ |
to-220 |
22500 |
原厂原装正品 |
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MBR2010规格书下载地址
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2019-2-25
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