SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 1.0A

DESCRIPTION Th e MBR120 F MBR1200 F are available in S OD 1 23 FL p a ckage FEATURES ⚫ M e tal silicon junction, majority carrier conduction ⚫ For surface mounted applications ⚫ Low power loss, high efficien cy ⚫ High forward surge current capability ⚫ For use in low volta ge, high fre

DIODES

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N