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MBR10100CT价格
参考价格:¥1.0478
型号:MBR10100CT 品牌:Diodes 备注:这里有MBR10100CT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR10100CT批发/采购报价,MBR10100CT行情走势销售排行榜,MBR10100CT报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR10100CT | MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol | VAISH | ||
MBR10100CT | Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR10100CT | 10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts [LTO-DMS Semiconductor Corporatin] Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
MBR10100CT | 10.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR10100CT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Guard ring for transient protection ● Low power loss,high efficiency ● High current capability,low VF ● High surge capacity ● Metal of silicon rectifier , majority carrier conduction ● Plastic package has UL flammab | HY | ||
MBR10100CT | Power Schottky Rectifier - 10Amp 100Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency -ESD performance human body mode > 8 KV □ Application -AC/DC | SIRECT 矽莱克半导体 | ||
MBR10100CT | Schottky Barrier Rectifiers Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up to 175℃ junction temperature. Typical application are in switching Mode Power Supplies such as | MOSPEC 统懋 | ||
MBR10100CT | 10Amp schottky barrier rectifier 80-100 volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | CHENYI 商朗电子 | ||
MBR10100CT | Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR10100CT | 10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | ||
MBR10100CT | 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur | TSC 台湾半导体 | ||
MBR10100CT | SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A. • Repetitive Peak Reverse Voltage : VRRM=100V. • Fast Reverse Recovery Time : trr=35ns. | KECKEC CORPORATION KEC株式会社 | ||
MBR10100CT | Dual High-Voltage Schottky Barrier Rectifiers Reverse Voltage 90 to 100 Volts Forward Current 10.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high effi | Good-Ark | ||
MBR10100CT | Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10A Reverse Voltage 40 to 200 V Forward Current 10A Features ·Low Power Loss, High Efficiency ·Low Forward Voltage Drop ·High Current Capability ·Lead and body according with RoHS standard | DACHANG 大昌电子 | ||
MBR10100CT | Schottky Barrier Diode Schottky Barrier Diode | SIRECT 矽莱克半导体 | ||
MBR10100CT | 10 AMPERES SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring for overvlotage | PANJIT 強茂 | ||
MBR10100CT | 10 Am p Schott ky Barrier Rectifier 80-100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epo | MCC 美微科 | ||
MBR10100CT | 10A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier Dual High Voltage Schottky Rectifier Specification Features: ■ High Voltage Wide Range Selection, 100V, 150V & 200V ■ High Switching Speed Device ■ Low Forward Voltage Drop ■ Low Power Loss and High Efficiency ■ Guard Ring for Over-voltage Protection ■ High Surge Capability ■ RoHS Comp | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子(集团)有限公司 | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequen | CTC ctconline | ||
MBR10100CT | 10 Amp Schottky Barrier Rectifier 80-100 Volts Features ● Metal of siliconrectifier, majonty carrier conducton ● Guard ring for transient protection ● Low power loss high efficiency ● High surge capacity, High current capability | PFS 平盛电子 | ||
MBR10100CT | Low forward voltage drop Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro | Littelfuse 力特 | ||
MBR10100CT | 10.0AMP. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque | LUGUANG 鲁光电子 | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 100 V Forward Current - 10 A FEATURES ♦ Very low forward voltage ♦ High current capability ♦ High forward surge capability ♦ Low power losses, High efficiency ♦ Guarding for over voltage protection ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA | YFWDIODE 佑风微电子 | ||
MBR10100CT | ITO-220AB Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque | LUGUANG 鲁光电子 | ||
MBR10100CT | Schottky Diodes Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Ap | YANGJIE 扬州扬杰电子 | ||
MBR10100CT | SCHOTTKY RECTIFIERS VOLTAGE 20~200 Volts CURRENT 10 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capability • High frequency | NIUHANG 纽航电子 | ||
MBR10100CT | Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Ap | JIANGSU 长电科技 | ||
MBR10100CT | Dual Common Cathode High-Voltage Schottky Rectifier FEATURES • 150°C TJ operation • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Guard ring for enhanced ruggedness, long term reliability and overvoltage protection • Solder bath temperature 260°C maximum, 40s, per | NELLSEMI 尼尔半导体 | ||
MBR10100CT | Product Specification Reverse Voltage 90 to 100 Volts Forward Current 10.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high effi | Good-Ark | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDA 辰达半导体 | ||
MBR10100CT | DUAL SCHOTTKY RECTIFIERS VOLTAGE RANGE: 80 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Gua | DSK | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 40 to 200 V Forward Current - 10 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any Mechanical data • Case: TO-220 • Approx. Weight: | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
MBR10100CT | Schottky Barrier Rectifiers Reverse Voltage 40 ~ 200 V Forward Current 10 A Features ● Low reverse leakage ● High forward surge capability ● High reliability ● Lead and body according with RoHS standard ● Green compound with suffix -F on Marking Mechanical Data ● Case: TO-220AB Molded plastic ● Epoxy: UL 94V-0 rate | LEIDITECH 雷卯电子 | ||
MBR10100CT | 10A Schottky Barrier Rectifiers FEATURES • Metal of silicon rectifier,majority carrier conducton • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF • High surge capacity • Plastic package has UL flammability classification 94V-0 MECHANICAL DATA • Case :TO-220 mol | MORESEMI 摩矽半导体 | ||
MBR10100CT | Schottky Barrier Rectifier FEATURES • Low Forward Voltage • 150℃ Operating Junction Temperature • Guaranteed Reverse Avalanche • Low Power Loss/High Efficiency • High Surge Capacity • Low Stored Charge Majority Carrier Conduction | ISC 无锡固电 | ||
MBR10100CT | 10AMp Schott ky Barrier Rectifier 80-100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | ||
MBR10100CT | REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 10.0 Amperes
| FORMOSA 美丽微半导体 | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | SY 顺烨电子 | ||
MBR10100CT | Schottky Barrier Diode in a TO-220 Plastic Package Descriptions Schottky Barrier Diode in a TO-220 Plastic Package. Features Low power loss, high efficiency. Applications For use in low voltage,high frequency inverters, free wheeling, and polarity protection applications. | FOSHAN 蓝箭电子 | ||
MBR10100CT | Dual Schottky Barrier Rectifiers Reverse Voltage 100 Volts , Forward Current 10A Reverse Voltage 100 Volts , Forward Current 10A Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardring | FS | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u | HORNBY 南通康比电子 | ||
MBR10100CT | Schottky Diodes FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106 | RFERFE international RFE国际公司RFE国际股份有限公司 | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco | SY 顺烨电子 | ||
MBR10100CT | 10.0 AMP SCHOTTKY BARRIER RECTIFIERS 文件:635.3 Kbytes Page:2 Pages | BYTESONIC 松浩电子 | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIER 文件:573 Kbytes Page:2 Pages | CHENDA 辰达半导体 | ||
MBR10100CT | Schottky Barrier Recitifier 文件:443.93 Kbytes Page:3 Pages | HY | ||
MBR10100CT | 10A SCHOTTKY BARRIER RECTIFIER 文件:325.61 Kbytes Page:5 Pages | DIODES 美台半导体 | ||
MBR10100CT | Dual Common Cathode Schottky Rectifier 文件:201.82 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBR10100CT | 10.0A SCHOTTKY BARRIER RECTIFIERS 100V 文件:358.84 Kbytes Page:2 Pages | PACELEADERPACELEADER INDUSTRIAL 霈峰霈峰实业有限公司 | ||
MBR10100CT | Schottky Barrier Rectifier 文件:134.84 Kbytes Page:2 Pages | DACHANG 大昌电子 | ||
MBR10100CT | Lower power losses, high efficiency 文件:1.64441 Mbytes Page:4 Pages | KERSEMI | ||
MBR10100CT | SCHOTTKY RECTIFIERS 文件:462.38 Kbytes Page:4 Pages | NIUHANG 纽航电子 | ||
MBR10100CT | 10 Amp Schott ky Barrier Rectifier 80-100 Volts 文件:268.65 Kbytes Page:3 Pages | MCC 美微科 | ||
MBR10100CT | High Tjm Low IRRM Schottky Barrier Diodes 文件:92.52 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR10100CT | Dual Common-Cathode High Voltage Schottky Rectifier 文件:138.05 Kbytes Page:5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR10100CT | SCHOTTKY BARRIER RECTIFIERS 文件:141.69 Kbytes Page:3 Pages | HY | ||
MBR10100CT | 封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT) 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | ||
MBR10100CT | 10 Amp Schott ky Barrier Rectifier 80-100 Volts 文件:153.44 Kbytes Page:3 Pages | MCC 美微科 |
MBR10100CT产品属性
- 类型
描述
- 型号
MBR10100CT
- 功能描述
肖特基二极管与整流器 10A 100V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
强茂 |
2023+ |
TO-220 |
9865 |
100%原厂代理库存,正品全新现货 |
|||
DIODES/美台 |
24+ |
TO-220 |
45000 |
只做全新原装进口现货 |
|||
TF |
22+ |
TO-220F |
1054 |
原装正品现货,可开13点税 |
|||
PANJIT/强茂 |
2410+ |
TO-220F |
1000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
LITEON |
2016+ |
TO220 |
6528 |
只做进口原装现货!假一赔十! |
|||
ON |
22+ |
TO-220 |
14000 |
进口原装 |
|||
GS |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
24+ |
TO-220 |
24000 |
全新原装现货特价销售,欢迎来电查询 |
|||
PANJIT |
19+ |
TO-220 |
20000 |
||||
24+ |
3000 |
公司现货 |
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