MBR1010价格

参考价格:¥1.0478

型号:MBR10100CT 品牌:Diodes 备注:这里有MBR1010多少钱,2025年最近7天走势,今日出价,今日竞价,MBR1010批发/采购报价,MBR1010行情走势销售排行榜,MBR1010报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MBR1010

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

HY ELECTRONIC CORP.

HY
MBR1010

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

HY ELECTRONIC CORP.

HY
MBR1010

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

Good-Ark

GOOD-ARK Electronics

Good-Ark
MBR1010

Silicon Bridge Rectifiers

文件:402.55 Kbytes Page:3 Pages

HY

HY ELECTRONIC CORP.

HY

MBR10100 SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish: 100% Pure Tin This is

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微电子桑德斯微电子器件(南京)有限公司

SMCDIODE

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10 A

Reverse Voltage 40 to 200 V Forward Current 10 A Features • Low Power Loss,High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard

DACHANGRugao Dachang Electronics Co., Ltd

大昌电子如皋市大昌电子有限公司

DACHANG

10Amp schottky barrier rectifier 20to100 volts

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal of silicon rectifier, majority carrier conduction ● Guard ring for transient protection ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity ● Plastic package has UL flamma

HY

HY ELECTRONIC CORP.

HY

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volt CURRENT 10 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER

SCHOTTKY BARRIER RECTIFIER

FEATURE • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL

High-Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

High Voltage Schottky Rectifiers

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction T

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

SCHOTTKY BARRIER RECTIFIER

FEATURE · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

Metal of silicon rectifier , majority carrier conduction

Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes ​​​​​​​ FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency •

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合电子山东星合明辉电子有限公司

GXELECTRONICS

SCHOTTKY BARRIER RECTIFIER

■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

10A SCHOTTKY RECTIFIER

DIGITRON

Digitron Semiconductors

DIGITRON

Metal of siliconrectifier, majonty carrier conducton

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

10.0AMPS.Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

Schottky Barrier Rectifier

FEATURES • Low Forward Voltage • 150℃ Operating Junction Temperature • Guaranteed Reverse Avalanche • Low Power Loss/High Efficiency • High Surge Capacity • Low Stored Charge Majority Carrier Conduction

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes ​​​​​​​ FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency •

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合电子山东星合明辉电子有限公司

GXELECTRONICS

High Temperature Schottky Rectifier Diodes

• Nominal current 10 A • Repetitive peak reverse voltage 100 V • Plastic case TO-220AC • Weight approx. 1.8 g • Plastic material has UL classification 94V-0 • Standard packaging in tubes

DiotecDiotec Semiconductor

德欧泰克

Diotec

Schottky Barrier Rectifier

10A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epi

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA

Trench MOS Schottky technology

Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

Dual rectifier construction, positive center tap

Surge

Surge Components

Surge

10 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

CHENDA

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This

SMCSangdest Microelectronic (Nanjing) Co., Ltd

烧结金属

SMC

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

DSK

Diode Semiconductor Korea

DSK

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC

High-Voltage Schottky Rectifier, 10A/100V

FEATURES ● 150°C TJ operation ● Lower power losses, high efficiency ● Low forward voltage drop ● High forward surge capability ● Guard ring for enhanced ruggedness and long term reliability ● Solder bath temperature 275°C maximum, 10s, per JESD 22-B106 (for TO-220AC and lTO-220AC package) ●

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheelin

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

CHENDA

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

General Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR1010

BCDSEMIBCD Semiconductor Manufacturing Limited

新进半导体上海新进半导体制造有限公司

BCDSEMI

SCHOTTKY BARRIER RECTIFIER

FEATURES * 10 amps total (5 amps per diode leg) * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SCHOTTKY RECTIFIERS

VOLTAGE 20~200 Volts CURRENT 10 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capability • High frequency

NIUHANGDongguan City Niuhang Electronics Co.LTD

纽航电子广东纽航电子科技有限公司

NIUHANG

Schottky Diodes

High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability

RFERFE international

RFE国际公司RFE国际股份有限公司

RFE

SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. - For through hole applications. - Built-in strain relief. - High surge capacity. - Low profile package. - Low power loss, high efficiency. - Plastic package has underwrites la

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

Schottky Diodes

High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability

RFERFE international

RFE国际公司RFE国际股份有限公司

RFE

SCHOTTKY BARRIER RECTIFIER

FEATURES * 10 amps total (5 amps per diode leg) * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SCHOTTKY BARRIER RECTIFIER

FEATURES * 10 amps total (5 amps per diode leg) * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 100 V Forward Current - 10 A FEATURES ♦ Very low forward voltage ♦ High current capability ♦ High forward surge capability ♦ Low power losses, High efficiency ♦ Guarding for over voltage protection ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 100 V Forward Current - 10 A FEATURES ♦ Very low forward voltage ♦ High current capability ♦ High forward surge capability ♦ Low power losses, High efficiency ♦ Guarding for over voltage protection ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

ITO-220AB

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

Schottky Diodes

Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Ap

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE

10.0AMP. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

Low forward voltage drop

Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro

Littelfuselittelfuse

力特力特公司

Littelfuse

MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol

VAISH

Vaishali Semiconductor

VAISH

MBR1010产品属性

  • 类型

    描述

  • 型号

    MBR1010

  • 制造商

    HY

  • 制造商全称

    HY ELECTRONIC CORP.

  • 功能描述

    SILICON BRIDGE RECTIFIERS

更新时间:2025-8-5 19:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
M
24+
TO 220
157347
明嘉莱只做原装正品现货
LT
24+/25+
TO-220
1000
原装正品现货库存价优
长电
2015
TO-220A
25
一级代理,专注军工、汽车、医疗、工业、新能源、电力
N/A
1725+
TO220
3256
科恒伟业!只做原装正品,假一赔十!
ON
23+
TO-220
32078
10年以上分销商,原装进口件,服务型企业
GS
23+
TO-220
10000
专做原装正品,假一罚百!
LX专注高品质低VF
24+
TO-252
20000
原装正品支持实单
ONSEMI
16+
2600
全新原装!优势库存热卖中!
LITEON/光宝
16+
TO-220
316
深圳原装进口无铅现货
ON/安森美
21+
NA
29472
只做原装,假一罚十

MBR1010芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

MBR1010数据表相关新闻