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MBR1010价格
参考价格:¥1.0478
型号:MBR10100CT 品牌:Diodes 备注:这里有MBR1010多少钱,2025年最近7天走势,今日出价,今日竞价,MBR1010批发/采购报价,MBR1010行情走势销售排行榜,MBR1010报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MBR1010 | SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY HY ELECTRONIC CORP. | ||
MBR1010 | SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY HY ELECTRONIC CORP. | ||
MBR1010 | SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | Good-Ark GOOD-ARK Electronics | ||
MBR1010 | Silicon Bridge Rectifiers 文件:402.55 Kbytes Page:3 Pages | HY HY ELECTRONIC CORP. | ||
MBR10100 SCHOTTKY RECTIFIER Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Terminals finish: 100% Pure Tin This is | SMCDIODESMC Diode Solutions Co. LTD 桑德斯微电子桑德斯微电子器件(南京)有限公司 | |||
SCHOTTKY BARRIER RECTIFIER Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C,0.25”(6.35mm) from case for 10 seco | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | |||
Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10 A Reverse Voltage 40 to 200 V Forward Current 10 A Features • Low Power Loss,High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard | DACHANGRugao Dachang Electronics Co., Ltd 大昌电子如皋市大昌电子有限公司 | |||
10Amp schottky barrier rectifier 20to100 volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 | |||
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal of silicon rectifier, majority carrier conduction ● Guard ring for transient protection ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity ● Plastic package has UL flamma | HY HY ELECTRONIC CORP. | |||
10 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 10 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | |||
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |||
SCHOTTKY BARRIER RECTIFIER FEATURE • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | |||
High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
High Voltage Schottky Rectifiers FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SWITCHMODE??Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
10.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | |||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction T | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI Kersemi Electronic Co., Ltd. | |||
SCHOTTKY BARRIER RECTIFIER FEATURE · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
Metal of silicon rectifier , majority carrier conduction Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合电子山东星合明辉电子有限公司 | |||
SCHOTTKY BARRIER RECTIFIER ■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
10A SCHOTTKY RECTIFIER
| DIGITRON Digitron Semiconductors | |||
Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI Kersemi Electronic Co., Ltd. | |||
10.0AMPS.Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
Schottky Barrier Rectifier FEATURES • Low Forward Voltage • 150℃ Operating Junction Temperature • Guaranteed Reverse Avalanche • Low Power Loss/High Efficiency • High Surge Capacity • Low Stored Charge Majority Carrier Conduction | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合电子山东星合明辉电子有限公司 | |||
High Temperature Schottky Rectifier Diodes • Nominal current 10 A • Repetitive peak reverse voltage 100 V • Plastic case TO-220AC • Weight approx. 1.8 g • Plastic material has UL classification 94V-0 • Standard packaging in tubes | DiotecDiotec Semiconductor 德欧泰克 | |||
Schottky Barrier Rectifier 10A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epi | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | |||
Trench MOS Schottky technology Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number | KERSEMI Kersemi Electronic Co., Ltd. | |||
Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI Kersemi Electronic Co., Ltd. | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI Kersemi Electronic Co., Ltd. | |||
Dual rectifier construction, positive center tap
| Surge Surge Components | |||
10 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰达半导体深圳辰达半导体有限公司 | |||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMCSangdest Microelectronic (Nanjing) Co., Ltd 烧结金属 | |||
SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard | DSK Diode Semiconductor Korea | |||
10 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |||
High-Voltage Schottky Rectifier, 10A/100V FEATURES ● 150°C TJ operation ● Lower power losses, high efficiency ● Low forward voltage drop ● High forward surge capability ● Guard ring for enhanced ruggedness and long term reliability ● Solder bath temperature 275°C maximum, 10s, per JESD 22-B106 (for TO-220AC and lTO-220AC package) ● | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 | |||
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheelin | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package | KERSEMI Kersemi Electronic Co., Ltd. | |||
SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI Kersemi Electronic Co., Ltd. | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰达半导体深圳辰达半导体有限公司 | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI Kersemi Electronic Co., Ltd. | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI Kersemi Electronic Co., Ltd. | |||
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR1010 | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES * 10 amps total (5 amps per diode leg) * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SCHOTTKY RECTIFIERS VOLTAGE 20~200 Volts CURRENT 10 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capability • High frequency | NIUHANGDongguan City Niuhang Electronics Co.LTD 纽航电子广东纽航电子科技有限公司 | |||
Schottky Diodes High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability | RFERFE international RFE国际公司RFE国际股份有限公司 | |||
SMD Schottky Barrier Rectifiers Features - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. - For through hole applications. - Built-in strain relief. - High surge capacity. - Low profile package. - Low power loss, high efficiency. - Plastic package has underwrites la | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
Schottky Diodes High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability | RFERFE international RFE国际公司RFE国际股份有限公司 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES * 10 amps total (5 amps per diode leg) * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SCHOTTKY BARRIER RECTIFIER FEATURES * 10 amps total (5 amps per diode leg) * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 100 V Forward Current - 10 A FEATURES ♦ Very low forward voltage ♦ High current capability ♦ High forward surge capability ♦ Low power losses, High efficiency ♦ Guarding for over voltage protection ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 100 V Forward Current - 10 A FEATURES ♦ Very low forward voltage ♦ High current capability ♦ High forward surge capability ♦ Low power losses, High efficiency ♦ Guarding for over voltage protection ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
ITO-220AB Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
Schottky Diodes Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Ap | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | |||
10.0AMP. Schottky Barrier Rectifiers Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
Low forward voltage drop Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro | Littelfuselittelfuse 力特力特公司 | |||
MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol | VAISH Vaishali Semiconductor |
MBR1010产品属性
- 类型
描述
- 型号
MBR1010
- 制造商
HY
- 制造商全称
HY ELECTRONIC CORP.
- 功能描述
SILICON BRIDGE RECTIFIERS
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
M |
24+ |
TO 220 |
157347 |
明嘉莱只做原装正品现货 |
|||
LT |
24+/25+ |
TO-220 |
1000 |
原装正品现货库存价优 |
|||
长电 |
2015 |
TO-220A |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
N/A |
1725+ |
TO220 |
3256 |
科恒伟业!只做原装正品,假一赔十! |
|||
ON |
23+ |
TO-220 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
GS |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
LX专注高品质低VF |
24+ |
TO-252 |
20000 |
原装正品支持实单 |
|||
ONSEMI |
16+ |
2600 |
全新原装!优势库存热卖中! |
||||
LITEON/光宝 |
16+ |
TO-220 |
316 |
深圳原装进口无铅现货 |
|||
ON/安森美 |
21+ |
NA |
29472 |
只做原装,假一罚十 |
MBR1010规格书下载地址
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