MBR10价格

参考价格:¥1.0478

型号:MBR10100CT 品牌:Diodes 备注:这里有MBR10多少钱,2025年最近7天走势,今日出价,今日竞价,MBR10批发/采购报价,MBR10行情走势销售排行榜,MBR10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR10

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

MBR10

SILICON BRIDGE RECTIFIERS

HY

虹扬科技

MBR10

High Efficiency DC-DC Converters

文件:1.9268 Mbytes Page:20 Pages

ONSEMI

安森美半导体

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

Good-Ark

固锝电子

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

Good-Ark

固锝电子

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

Good-Ark

固锝电子

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

Good-Ark

固锝电子

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

Good-Ark

固锝电子

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

Good-Ark

固锝电子

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This

SMC

桑德斯微电子

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This

SMC

桑德斯微电子

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

Good-Ark

固锝电子

Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10 A

Reverse Voltage 40 to 200 V Forward Current 10 A Features • Low Power Loss,High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard

DACHANG

大昌电子

10Amp schottky barrier rectifier 20to100 volts

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

CHENYI

商朗电子

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal of silicon rectifier, majority carrier conduction ● Guard ring for transient protection ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity ● Plastic package has UL flamma

HY

虹扬科技

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volt CURRENT 10 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters

PANJIT

強茂

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

Motorola

摩托罗拉

High Voltage Schottky Rectifiers

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

VishayVishay Siliconix

威世威世科技公司

10.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction T

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER

FEATURE • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A

TEL

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

SIRECTIFIER

矽莱克电子

Plastic package has Underwriters Laboratory Flammability Classifications 94V-0

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

KERSEMI

SCHOTTKY BARRIER RECTIFIER

FEATURE · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A

WINNERJOIN

永而佳

Metal of silicon rectifier , majority carrier conduction

Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes ​​​​​​​ FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency •

GXELECTRONICS

星合电子

High-Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov

BILIN

银河微电

SCHOTTKY BARRIER RECTIFIER

■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an

UTC

友顺

10A SCHOTTKY RECTIFIER

DIGITRON

Metal of siliconrectifier, majonty carrier conducton

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

KERSEMI

10.0AMPS.Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua

LUGUANG

鲁光电子

Schottky Barrier Rectifier

FEATURES • Low Forward Voltage • 150℃ Operating Junction Temperature • Guaranteed Reverse Avalanche • Low Power Loss/High Efficiency • High Surge Capacity • Low Stored Charge Majority Carrier Conduction

ISC

无锡固电

Schottky Barrier Rectifier

10A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epi

FORMOSA

美丽微半导体

Trench MOS Schottky technology

Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

KERSEMI

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

KERSEMI

Dual rectifier construction, positive center tap

Surge

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes ​​​​​​​ FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency •

GXELECTRONICS

星合电子

High Temperature Schottky Rectifier Diodes

• Nominal current 10 A • Repetitive peak reverse voltage 100 V • Plastic case TO-220AC • Weight approx. 1.8 g • Plastic material has UL classification 94V-0 • Standard packaging in tubes

Diotec

德欧泰克

10 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT

Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

CHENDA

辰达半导体

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This

SMC

桑德斯微电子

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard

DSK

10 AMPERES SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters

DYELEC

迪一电子

High-Voltage Schottky Rectifier, 10A/100V

FEATURES ● 150°C TJ operation ● Lower power losses, high efficiency ● Low forward voltage drop ● High forward surge capability ● Guard ring for enhanced ruggedness and long term reliability ● Solder bath temperature 275°C maximum, 10s, per JESD 22-B106 (for TO-220AC and lTO-220AC package) ●

NELLSEMI

尼尔半导体

MBR10产品属性

  • 类型

    描述

  • 型号

    MBR10

  • 制造商

    GOOD-ARK

  • 制造商全称

    GOOD-ARK Electronics

  • 功能描述

    SILICON BRIDGE RECTIFIERS

更新时间:2025-11-17 17:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LT
2018+
TO-220
26976
代理原装现货/特价热卖!
24+
TO-220
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
CJ/长电
24+
TO-220A
50000
全新原装,一手货源,全场热卖!
ON
25+
TO220-2
2568
原装优势!绝对公司现货
DIODES/美台
25+
SMD
518000
明嘉莱只做原装正品现货
ONSEMI
21+
TO-220AC
3200
百域芯优势 实单必成 可开13点增值税
鲁光电子
21+
TO-220AB
20
只做原装鄙视假货15118075546
CJ/长电
23+
NA
7825
原装正品!清仓处理!
SEP
2450+
TO220-2
8850
只做原装正品假一赔十为客户做到零风险!!

MBR10数据表相关新闻