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MBR10价格
参考价格:¥1.0478
型号:MBR10100CT 品牌:Diodes 备注:这里有MBR10多少钱,2025年最近7天走势,今日出价,今日竞价,MBR10批发/采购报价,MBR10行情走势销售排行榜,MBR10报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
MBR10 | SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | ||
MBR10 | High Efficiency DC-DC Converters 文件:1.9268 Mbytes Page:20 Pages | ONSEMI 安森美半导体 | ||
MBR10 | SILICON BRIDGE RECTIFIERS | HY 虹扬科技 | ||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | Good-Ark 固锝电子 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | Good-Ark 固锝电子 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | Good-Ark 固锝电子 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | Good-Ark 固锝电子 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | Good-Ark 固锝电子 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | Good-Ark 固锝电子 | |||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | |||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | HY 虹扬科技 | |||
SILICON BRIDGE RECTIFIERS FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition | Good-Ark 固锝电子 | |||
SWITCHMODE??Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara | Motorola 摩托罗拉 | |||
High Voltage Schottky Rectifiers FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世科技 | |||
10.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | |||
SWITCHMODE Power Rectifiers SWITCHMODE™ Power Rectifiers This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction T | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIER FEATURE • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A | TEL 东电电子 | |||
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | |||
Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10 A Reverse Voltage 40 to 200 V Forward Current 10 A Features • Low Power Loss,High Efficiency • Low Forward Voltage Drop • High Current Capability • Lead and body according with RoHS standard | DACHANG 大昌电子 | |||
10Amp schottky barrier rectifier 20to100 volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | CHENYI 商朗电子 | |||
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FEATURES ● Metal of silicon rectifier, majority carrier conduction ● Guard ring for transient protection ● Low power loss, high efficiency ● High current capability, low VF ● High surge capacity ● Plastic package has UL flamma | HY 虹扬科技 | |||
10 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 10 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequency inverters | PANJIT 強茂 | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIER FEATURE · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling. and Polarity Protection A | WINNERJOIN 永而佳 | |||
Metal of silicon rectifier , majority carrier conduction Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • | GXELECTRONICS 星合电子 | |||
High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum | VishayVishay Siliconix 威世科技 | |||
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A FEATURES High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for ov | BILIN 银河微电 | |||
SCHOTTKY BARRIER RECTIFIER ■ DESCRIPTION The UTC MBR10100 is a 10A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR10100 is suitable for free wheeling an | UTC 友顺 | |||
10A SCHOTTKY RECTIFIER
| DIGITRON | |||
Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | |||
10.0AMPS.Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANG 鲁光电子 | |||
Schottky Barrier Rectifier FEATURES • Low Forward Voltage • 150℃ Operating Junction Temperature • Guaranteed Reverse Avalanche • Low Power Loss/High Efficiency • High Surge Capacity • Low Stored Charge Majority Carrier Conduction | ISC 无锡固电 | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • | GXELECTRONICS 星合电子 | |||
High Temperature Schottky Rectifier Diodes • Nominal current 10 A • Repetitive peak reverse voltage 100 V • Plastic case TO-220AC • Weight approx. 1.8 g • Plastic material has UL classification 94V-0 • Standard packaging in tubes | Diotec 德欧泰克 | |||
Schottky Barrier Rectifier 10A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epi | FORMOSA 美丽微半导体 | |||
Trench MOS Schottky technology Features • Low Power Loss • High Efficiency • Low Forward Voltage, High Current Capability • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Marking : type number | KERSEMI | |||
Metal of siliconrectifier, majonty carrier conducton This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI | |||
Dual rectifier construction, positive center tap
| Surge | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gua | LUGUANG 鲁光电子 | |||
Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features • Low Power Loss • High Efficiency • Low Forward Voltage , High Current Capability • High surge capacity • Case : ITO-220AC Full Molded Plastic Package | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9 | KERSEMI | |||
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current -10.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦ | CHENDA 辰达半导体 | |||
Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | KERSEMI |
MBR10产品属性
- 类型
描述
- 型号
MBR10
- 制造商
HY
- 制造商全称
HY ELECTRONIC CORP.
- 功能描述
SILICON BRIDGE RECTIFIERS
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY |
22+ |
TO-220 |
8900 |
全新正品现货 有挂就有现货 |
|||
onsemi |
23+ |
6200 |
原装正品现货,德为本,正为先,通天下! |
||||
ON(安森美) |
2511 |
标准封装 |
8000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装,请咨询 |
|||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
MICRO COMMERCIAL COMPONENTS |
两年内 |
NA |
6428 |
实单价格可谈 |
|||
ON/安森美 |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
|||
PANJIT |
25+ |
SOD-123FL |
44089 |
PANJIT全新特价MBR1040VL即刻询购立享优惠#长期有货 |
|||
FAIRCHILD |
2025+ |
TO-220 |
3557 |
全新原厂原装产品、公司现货销售 |
|||
ON |
24+ |
TO220 |
6000 |
全新原装深圳仓库现货有单必成 |
MBR10规格书下载地址
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