32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

32M (4M X 8/2M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL32XTD/BD are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. The MBM29DL32XTD/BD are offered in a 48-pin TSOP(I) and FBGA Package. These devices are designed to be programmed in-system with the standard system 3

32M (4M X 8/2M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL32XTD/BD are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. The MBM29DL32XTD/BD are offered in a 48-pin TSOP(I) and FBGA Package. These devices are designed to be programmed in-system with the standard system 3

32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

GENERAL DESCRIPTION The A29DL32x family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0–I/O7. The device is designed to be programmed in

32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.28802 Mbytes Page：58 Pages

32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

文件：1.0192 Mbytes Page：58 Pages