512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64 K X 8) Bit SPI

DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI).