512K (64 K X 8) Bit SPI

DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI).

FeRAM - SPI接口 (一般用途)

512K (64 K X 8) Bit SPI

DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI).

512K (64 K X 8) Bit SPI

DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI).

512K (64 K X 8) Bit SPI

DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI).

512K (64 K X 8) Bit SPI

DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI).

512K (64 K X 8) Bit SPI

DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI).

512K (64 K X 8) Bit SPI

DESCRIPTION MB85RS512T is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS512T adopts the Serial Peripheral Interface (SPI).

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

512K (64K X 8) Bit SPI

DESCRIPTION MB85RS512TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：散装 描述：512KBIT FRAM WITH SPI SERIAL INT 集成电路（IC） 存储器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC FRAM 512KBIT SPI 30MHZ 8SOP 集成电路（IC） 存储器