2 M (256 K 횞 8) Bit SPI

文件：297.44 Kbytes Page：26 Pages

2 M (256 K × 8) Bit SPI

DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MT adopts the Serial Peripheral Interface (SPI).

2 M (256 K × 8) Bit SPI

DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MT adopts the Serial Peripheral Interface (SPI).

2 M (256 K 횞 8) Bit SPI

文件：297.44 Kbytes Page：26 Pages

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC FRAM 2MBIT SPI 25MHZ 8SOP 集成电路（IC） 存储器

2 M (256 K 횞 8) Bit SPI

文件：297.44 Kbytes Page：26 Pages

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC FRAM 2MBIT SPI 25MHZ 8SOP 集成电路（IC） 存储器

2M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

2 M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI)

2M (256 K 횞 8) ?볝긿?늆PI

文件：458.61 Kbytes Page：28 Pages

2 M (256 K 횞 8) Bit SPI

文件：297.44 Kbytes Page：26 Pages