2 M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI)

宽电压SPI FeRAM系列

FeRAM - SPI接口 (一般用途)

2 M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI)

2 M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI)

2 M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI)

2 M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI)

2 M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI)

2 M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MTA is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS2MTA adopts the Serial Peripheral Interface (SPI)

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：2MBIT FRAM WITH SPI SERIAL INTER 集成电路（IC） 存储器

封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC FRAM 2MBIT SPI 40MHZ 8DIP 集成电路（IC） 存储器

2M (256 K X 8) Bit SPI

DESCRIPTION MB85RS2MLY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperatu

2M (256 K 횞 8) ?볝긿?늆PI

文件：458.61 Kbytes Page：28 Pages

2 M (256 K 횞 8) Bit SPI

文件：297.44 Kbytes Page：26 Pages

2 M (256 K 횞 8) Bit SPI

文件：297.44 Kbytes Page：26 Pages