512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512T is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512T is able to retain dat

FeRAM (I2C接口)

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512T is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512T is able to retain dat

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512T is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512T is able to retain dat

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512T is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512T is able to retain dat

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512T is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512T is able to retain dat

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512TY is able to retain d

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC FRAM 512KBIT I2C 3.4MHZ 8SOP 集成电路（IC） 存储器

512K (64 K x 8) Bit I2C

 DESCRIPTION The MB85RC512LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC512LY is able to retain d