256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

256 K (32 K 횞 8) Bit I2C

文件：317.54 Kbytes Page：28 Pages

256 K (32 K 횞 8) Bit I2C

文件：317.54 Kbytes Page：28 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC FRAM 256KBIT I2C 1MHZ 8SOP 集成电路（IC） 存储器

256K (32 K x 8) Bit I2C

DESCRIPTION The MB85RC256LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256LY is able to retain dat

256K (32 K x 8) Bit I2C

DESCRIPTION The MB85RC256TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256TY is able to retain dat

256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

256 K (32 K x 8) Bit IC

 DESCRIPTION The MB85RC256VN is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256VN is able to retain d

256 K (32 K횞8) ?볝긿?뉹2C

文件：304.6 Kbytes Page：32 Pages