256 K (32 K x 8) Bit IC

 DESCRIPTION The MB85RC256VN is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256VN is able to retain d

I2C FeRAM系列

256 K (32 K x 8) Bit IC

 DESCRIPTION The MB85RC256VN is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256VN is able to retain d

256 K (32 K x 8) Bit IC

 DESCRIPTION The MB85RC256VN is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256VN is able to retain d

256K (32 K x 8) Bit I2C

DESCRIPTION The MB85RC256LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256LY is able to retain dat

256K (32 K x 8) Bit I2C

DESCRIPTION The MB85RC256TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256TY is able to retain dat

256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

256 K (32 K횞8) ?볝긿?뉹2C

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