256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

FUJITSU SEMICONDUCTOR

文件：317.54 Kbytes Page：28 Pages

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：散装 描述：256KBIT FRAM WITH I2C SERIAL INT 集成电路（IC） 存储器

256 K (32 K 횞 8) Bit I2C

文件：317.54 Kbytes Page：28 Pages

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC FRAM 256KBIT I2C 1MHZ 8SOP 集成电路（IC） 存储器

256 K (32 K 횞 8) Bit I2C

文件：317.54 Kbytes Page：28 Pages

256K (32 K x 8) Bit I2C

DESCRIPTION The MB85RC256LY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256LY is able to retain dat

256K (32 K x 8) Bit I2C

DESCRIPTION The MB85RC256TY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256TY is able to retain dat

256 K (32 K x 8) Bit I2C

 DESCRIPTION The MB85RC256V is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256V is able to retain dat

256 K (32 K x 8) Bit IC

 DESCRIPTION The MB85RC256VN is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC256VN is able to retain d

256 K (32 K횞8) ?볝긿?뉹2C

文件：304.6 Kbytes Page：32 Pages