Memory FRAM(Ferroelectric Random Access Memory)

文件：153.42 Kbytes Page：12 Pages

256 K (32 K x 8) Bit

DESCRIPTIONS The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using

256 K (32 K 횞 8) ?볝긿?

文件：413.24 Kbytes Page：36 Pages

256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies

文件：139.33 Kbytes Page：2 Pages

Memory FRAM CMOS 256 K (32 K 횞 8) Bit

文件：277.18 Kbytes Page：14 Pages