DESCRIPTIONS

The MB85R256F is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R256F can be used for 1012 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

The MB85R256F uses a pseudo - SRAM interface.

FEATURES

• Bit configuration : 32,768 words  8 bits

• Read/write endurance : 1012 times / byte

• Data retention : 10 years (  85 C), 95 years (  55 C), over 200 years (  35 C)

• Operating power supply voltage : 2.7 V to 3.6 V

• Low power consumption : Operating power supply current 5 mA (Typ)

Standby current 5 A (Typ)

• Operation ambient temperature range:  40 C to  85 C

• Package : 28-pin plastic TSOP

RoHS compliant