Product Summary Prototyping Kits

OVERVIEW In order to support initial design and prototyping activities involving Mitel components, a number of ancillary component kits are available. These include the components which are utilized on the ISDN EXPRESS family of board level products. These kits are intended for use in supporting

Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20째C, RH=65)

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包装：托盘 描述：MIC COND ANALOG OMNI -44DB 6MM D 音频设备， 产品 麦克风

咪头/麦克风

咪头/麦克风

Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20째C, RH=65)

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包装：散装 描述：MIC COND ANALOG OMNI -42DB 6MM D 音频设备， 产品 麦克风

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

Silicon Industrial Rectifier 20 Amp

Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add