2MHz to 1.6GHz 45dB RF-Detecting Controllers and RF Detector

General Description The MAX9930–MAX9933 low-cost, low-power logarithmic amplifiers are designed to control RF power amplifiers (PA) and transimpedance amplifiers (TIA), and to detect RF power levels. These devices are designed to operate in the 2MHz to 1.6GHz frequency range. Features ♦

2MHz to 1.6GHz 45dB RF-Detecting Controllers and RF Detector

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On-Board Quasi-Measurement Mode Circuitry

文件：138.63 Kbytes Page：6 Pages

2MHz to 1.6GHz 45dB RF-Detecting Controllers and RF Detector

General Description The MAX9930–MAX9933 low-cost, low-power logarithmic amplifiers are designed to control RF power amplifiers (PA) and transimpedance amplifiers (TIA), and to detect RF power levels. These devices are designed to operate in the 2MHz to 1.6GHz frequency range. Features ♦

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：管件 描述：IC RF DETECT 2MHZ-1.6GHZ 8UMAX RF/IF，射频/中频和 RFID 射频检测器

2MHz to 1.6GHz 45dB RF-Detecting Controllers and RF Detector

文件：2.03299 Mbytes Page：16 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：管件 描述：IC RF DETECT 2MHZ-1.6GHZ 8UMAX RF/IF，射频/中频和 RFID 射频检测器

2MHz to 1.6GHz 45dB RF-Detecting Controllers and RF Detector

文件：268.2 Kbytes Page：16 Pages

RS232/423 Low Cap, #24-7c, FPE, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/9A, RDS(ON) =12mΩ(typ.) @ VGS = 4.5V RDS(ON) =18mΩ(typ.) @ VGS = 2.5V • P-Channel -20V/-6A, RDS(ON) =30mΩ(typ.) @ VGS =-4.5V RDS(ON) =50mΩ(typ.) @ VGS =-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free

Simple Drive Requirement, Full Bridge Application on LCD Monitor Inverter

文件：99.35 Kbytes Page：7 Pages