Low-Noise, Regulated, -2V GaAsFET Bias

General Description The MAX840/MAX843/MAX844 low-noise, inverting charge-pump power supplies are ideal for biasing GaAsFETs in cellular telephone transmitter amplifiers. They operate with inputs down to 2.5V. Features ♦ Fixed -2V or Adjustable -0.5V to -9.4V Output at 4mA (MAX840) ♦ 2.5V to 10

低噪声、稳压型、-2V GaAsFET偏置电源

MAX840/MAX843/MAX844低噪声、反相电荷泵电源非常适合用于偏置蜂窝电话发射器放大器中的GaAsFET。其工作输入电压低至2.5V。\n\n MAX840提供-2V预设输出和-0.5V至-9.4V可调输出。MAX843/MAX844使用外部正控制电压来设置负输出电压。所有器件的输入电压范围为2.5V至10V，VIN > 2.7V时的输出电流为4mA。这些电路可以使用低至0.22µF的小型电容工作。\n\n 内部线性稳压器将MAX840的输出电压纹波降至1mVp-p。对于充分滤波的控制电压(VCTRL)，MAX843/MAX844还可实现低于1mVp-p的典型输 • 4mA时提供-2V固定输出或-0.5V至-9.4V可调输出(MAX840)\n\n• 输入电压范围：2.5V至10V\n\n• 使用小型电容（低至0.22µF）工作\n\n• 输出电压纹波：1mVp-p\n\n• 电荷泵开关频率：\n• 正常工作时为100kHz\n\n• 关断模式下为20kHz (MAX844)\n\n\n\n\n• 整个温度范围内的最大逻辑电平关断电流为1µA(MAX840/MAX843)\n\n• 小型8引脚SO封装;

Low-Noise, Regulated, -2V GaAsFET Bias

General Description The MAX840/MAX843/MAX844 low-noise, inverting charge-pump power supplies are ideal for biasing GaAsFETs in cellular telephone transmitter amplifiers. They operate with inputs down to 2.5V. Features ♦ Fixed -2V or Adjustable -0.5V to -9.4V Output at 4mA (MAX840) ♦ 2.5V to 10

Low-Noise, Regulated, -2V GaAsFET Bias

General Description The MAX840/MAX843/MAX844 low-noise, inverting charge-pump power supplies are ideal for biasing GaAsFETs in cellular telephone transmitter amplifiers. They operate with inputs down to 2.5V. Features ♦ Fixed -2V or Adjustable -0.5V to -9.4V Output at 4mA (MAX840) ♦ 2.5V to 10

Low-Noise, Regulated, -2V GaAsFET Bias

General Description The MAX840/MAX843/MAX844 low-noise, inverting charge-pump power supplies are ideal for biasing GaAsFETs in cellular telephone transmitter amplifiers. They operate with inputs down to 2.5V. Features ♦ Fixed -2V or Adjustable -0.5V to -9.4V Output at 4mA (MAX840) ♦ 2.5V to 10

Low-Noise, Regulated, -2V GaAsFET Bias

General Description The MAX840/MAX843/MAX844 low-noise, inverting charge-pump power supplies are ideal for biasing GaAsFETs in cellular telephone transmitter amplifiers. They operate with inputs down to 2.5V. Features ♦ Fixed -2V or Adjustable -0.5V to -9.4V Output at 4mA (MAX840) ♦ 2.5V to 10

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC REG CHARGE PUMP 1OUT 8SOIC 集成电路（IC） 特殊用途稳压器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC REG CHARGE PUMP 1OUT 8SOIC 集成电路（IC） 特殊用途稳压器

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T

RF POWER TRANSISTOR NPN SILICON

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ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

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