Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

微处理器监控电路

MAX791微处理器(µP)监控电路减少了监控µP系统中的电源和电池控制功能所需的复杂性和元件数量。MAX791具有50µA电源电流，因此非常适合用于便携式设备，同时具有6ns芯片使能传播延迟和250mA输出能力（备用电池模式下为25mA），也适用于更大、更高性能的设备。\n\n MAX791采用16引脚DIP和窄体SO封装，同时提供以下功能：\n\n µP复位-反RESET输出在上电、关断和掉电情况下置位，并且即使电路中没有电池，在VCC低至1V时也能处于正确的状态。 手动复位输入。 1.25V阈值检测器用于电源故障警告和低电池电量检测或+5V以外电源的监控。 • 4.65V精密电压监控\n\n• 200ms电源正常/复位时间延迟\n\n• 独立看门狗定时器（预设或可调）\n\n• 待机电流：1µA\n\n• 电源开关\n• VCC模式下提供250mA输出\n\n• 备用电池模式下提供25mA输出\n\n\n\n\n• 芯片使能信号板载选通\n• 存储器写周期完成\n\n• 6ns CE栅极传播延迟\n\n\n\n\n• 与 MaxCap™ 或 SuperCap™ 兼容\n\n• 电压监控器，监控有无电源故障或低电池电量警告\n\n• 备用电池监控器\n\n• 低至 VCC = 1V 时确保反RESET有效;

Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

Microprocessor Supervisory Circuit

General Description The MAX791 microprocessor (µP) supervisory circuit reduces the complexity and number of components needed to monitor power-supply and battery-control functions in µP systems. The 50µA supply current makes the MAX791 ideal for use in portable equipment, while the 6ns chip-enabl

封装/外壳：16-DIP（0.300"，7.62mm） 包装：管件 描述：IC SUPERVISOR 1 CHANNEL 16DIP 集成电路（IC） 监控器

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC SUPERVISOR 1 CHANNEL 16SOIC 集成电路（IC） 监控器

POWER TRANSISTOR SILICON

NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation V

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability