POWER TRANSISTOR SILICON

NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation V

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc APPLICATIONS • Designed for low power audio amplifier and low current,

Complementary Plastic Silicon Power Transistors

. . . designed for low power audio amplifier and low-current, high speed switching applications. • High Collector-Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Win) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • High DC Current Gain @ IQ = 200 mAdc hpE = 40-250 • LowCollector-Emitter Satura

POWER TRANSISTOR SILICON

Successive Approximation A/D Converter 12bit, 0.5MSPS to 1MSPS, 8-channel, SPI Interface

The BD79104MUF-M is a general purpose, 12bit 8-channel successive approximation A/D converter. The sampling rate of BD79104MUF-M ranges from 0.5MSPS to 1MSPS. • AEC-Q100 Qualified (Grade 1)\n• Maximum 1MSPS Sampling Rate\n• Low Power Consumption\n• Small VQFN16FV3030 Package\n• Serial Interface Compatible with\nSPI/QSPI/MICROWIRE\n• Single-ended Input\n• Output Code in Straight Binary Format;

Successive Approximation A/D Converter 12 bit, 0.5 MSPS to 1 MSPS, 8-channel, SPI Interface

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Maximum 1 MSPS Sampling Rate ◼ Low Power Consumption ◼ Small VQFN16FV3030 Package ◼ Serial Interface Compatible with SPI/QSPI/MICROWIRE ◼ Single-ended Input ◼ Output Code in Straight Binary Format (Note 1) Grade 1 Applications ◼ Car Navigation Sys

丝印代码：D79104；Successive Approximation A/D Converter 12 bit, 0.5 MSPS to 1 MSPS, 8-channel, SPI Interface

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Maximum 1 MSPS Sampling Rate ◼ Low Power Consumption ◼ Small VQFN16FV3030 Package ◼ Serial Interface Compatible with SPI/QSPI/MICROWIRE ◼ Single-ended Input ◼ Output Code in Straight Binary Format (Note 1) Grade 1 Applications ◼ Car Navigation Sys

Successive Approximation A/D Converter 12 bit, 8-channel, I2C Interface

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Low Power Consumption ◼ Small VQFN16FV3030 Package ◼ 2-wire Serial Bus Interface (Supports up to 3.4 MHz) ◼ Single-ended Inputs ◼ Alert Function (Note 1) Grade 1 Applications ◼ Cluster Displays ◼ Infotainment ◼ Battery Management Systems (BMS)

Successive Approximation A/D Converter 12 bit, 8-channel, I²C Interface

The BD79124MUF-C is a general purpose, 12 bit 8-channel successive approximation A/D converter. • AEC-Q100 Qualified(Grade 1)\n• Low Power Consumption\n• Small VQFN16FV3030 Package\n• 2-wire Serial Bus Interface (Supports up to 3.4 MHz)\n• Single-ended Inputs\n• Alert Function;

丝印代码：D79124；Successive Approximation A/D Converter 12 bit, 8-channel, I2C Interface

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Low Power Consumption ◼ Small VQFN16FV3030 Package ◼ 2-wire Serial Bus Interface (Supports up to 3.4 MHz) ◼ Single-ended Inputs ◼ Alert Function (Note 1) Grade 1 Applications ◼ Cluster Displays ◼ Infotainment ◼ Battery Management Systems (BMS)

包装：管件 描述：IC MOTOR DRIVER PAR HSOP 集成电路（IC） 电机驱动器，控制器

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability