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BD791晶体管资料

  • BD791别名:BD791三极管、BD791晶体管、BD791晶体三极管

  • BD791生产厂家:美国摩托罗拉半导体公司

  • BD791制作材料:Si-NPN

  • BD791性质:低频或音频放大 (LF)_功率放大 (L)

  • BD791封装形式:直插封装

  • BD791极限工作电压:100V

  • BD791最大电流允许值:4A

  • BD791最大工作频率:>50MHZ

  • BD791引脚数:3

  • BD791最大耗散功率:15W

  • BD791放大倍数

  • BD791图片代号:B-21

  • BD791vtest:100

  • BD791htest:50000100

  • BD791atest:4

  • BD791wtest:15

  • BD791代换 BD791用什么型号代替:BDX35,BDX36,BDX37,MJE240,MJE241,MJE242,MJE243,MJE244,3DA97D,

型号 功能描述 生产厂家 企业 LOGO 操作
BD791

POWER TRANSISTOR SILICON

NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation V

ONSEMI

安森美半导体

BD791

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc APPLICATIONS • Designed for low power audio amplifier and low current,

ISC

无锡固电

BD791

Complementary Plastic Silicon Power Transistors

. . . designed for low power audio amplifier and low-current, high speed switching applications. • High Collector-Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Win) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • High DC Current Gain @ IQ = 200 mAdc hpE = 40-250 • LowCollector-Emitter Satura

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD791

POWER TRANSISTOR SILICON

ONSEMI

安森美半导体

Successive Approximation A/D Converter 12 bit, 0.5 MSPS to 1 MSPS, 8-channel, SPI Interface

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Maximum 1 MSPS Sampling Rate ◼ Low Power Consumption ◼ Small VQFN16FV3030 Package ◼ Serial Interface Compatible with SPI/QSPI/MICROWIRE ◼ Single-ended Input ◼ Output Code in Straight Binary Format (Note 1) Grade 1 Applications ◼ Car Navigation Sys

ROHM

罗姆

丝印代码:D79104;Successive Approximation A/D Converter 12 bit, 0.5 MSPS to 1 MSPS, 8-channel, SPI Interface

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Maximum 1 MSPS Sampling Rate ◼ Low Power Consumption ◼ Small VQFN16FV3030 Package ◼ Serial Interface Compatible with SPI/QSPI/MICROWIRE ◼ Single-ended Input ◼ Output Code in Straight Binary Format (Note 1) Grade 1 Applications ◼ Car Navigation Sys

ROHM

罗姆

Successive Approximation A/D Converter 12 bit, 8-channel, I2C Interface

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Low Power Consumption ◼ Small VQFN16FV3030 Package ◼ 2-wire Serial Bus Interface (Supports up to 3.4 MHz) ◼ Single-ended Inputs ◼ Alert Function (Note 1) Grade 1 Applications ◼ Cluster Displays ◼ Infotainment ◼ Battery Management Systems (BMS)

ROHM

罗姆

丝印代码:D79124;Successive Approximation A/D Converter 12 bit, 8-channel, I2C Interface

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Low Power Consumption ◼ Small VQFN16FV3030 Package ◼ 2-wire Serial Bus Interface (Supports up to 3.4 MHz) ◼ Single-ended Inputs ◼ Alert Function (Note 1) Grade 1 Applications ◼ Cluster Displays ◼ Infotainment ◼ Battery Management Systems (BMS)

ROHM

罗姆

Successive Approximation A/D Converter 12bit, 0.5MSPS to 1MSPS, 8-channel, SPI Interface

ROHM

罗姆

Successive Approximation A/D Converter 12 bit, 8-channel, I²C Interface

ROHM

罗姆

包装:管件 描述:IC MOTOR DRIVER PAR HSOP 集成电路(IC) 电机驱动器,控制器

ROHM

罗姆

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability

TRSYS

Transys Electronics

BD791产品属性

  • 类型

    描述

  • 型号

    BD791

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-3-18 17:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
24+
SOP24
6980
原装现货,可开13%税票
ROHM/罗姆
2450+
SSOP
6540
原装现货或订发货1-2周
ROHM/罗姆
23+
SSOP-B16
15800
专业配单,原装正品假一罚十,代理渠道价格优
00+
TSSOP
15840
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ROHM/罗姆
25+
SSOP
1056
全新原装正品支持含税
ROHM
SSOP-202K
68500
一级代理 原装正品假一罚十价格优势长期供货
ROHM/罗姆
2026+
SSOP-202K
65428
百分百原装现货 实单必成
ROHM/罗姆
25+
SSOP20
11500
原装现货,价格优势
ROHM
23+24
SSOP-20
9860
原厂原包装。终端BOM表可配单。可开13%增值税
ROHM
0319+
SSOP-20/2K
1970
原装现货海量库存欢迎咨询

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